公开(公告)号：WO2012000849A3

公开(公告)日：2012-01-05

申请号：PCT/EP2011/060377

申请日：2011-06-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  PARK, Jin-Hong ,  ASSEFA, Solomon ,  KIM, Jee, Hwan ,  VLASOV, Yurii

Inventor： PARK, Jin-Hong ,  ASSEFA, Solomon ,  KIM, Jee, Hwan ,  VLASOV, Yurii

IPC: H01L31/102 ,  H01L31/18

Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, implanting n-type ions in the Ge layer, patterning the n-type Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline n-type Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.

公开(公告)号：WO2011118578A1

公开(公告)日：2011-09-29

申请号：PCT/JP2011/056829

申请日：2011-03-22

Applicant: 富士フイルム株式会社 ,  澤木 大悟 ,  養父 克行

Inventor： 澤木　大悟 ,  養父　克行

IPC: H01L51/42 ,  H01L31/102 ,  H01L27/146

CPC classification number: H01L51/4253 ,  B82Y10/00 ,  H01L27/307 ,  H01L51/0047 ,  H01L51/006 ,  H01L51/0064 ,  Y02E10/549

Abstract: 　有機光電変換層を備える光電変換素子で、光照射による感度劣化を抑制する。　基板１０１上に第１電極層１０４と有機材料を含む光電変換層１５と第２電極層１０８とが積層されてなる光電変換素子１００であって、光電変換層１５がＰ型有機半導体とＮ型有機半導体のバルクへテロ構造体を備え、該Ｐ型有機半導体のイオン化ポテンシャルと前記バルクへテロ構造体の見かけのイオン化ポテンシャルとの差が０．５０ｅＶ以下とする。これにより、光照射による感度劣化を抑制することが可能となる。

Abstract translation: 公开了一种包含有机光电转换层的光电转换元件，其中抑制了由于光照射导致的灵敏度劣化。 具体公开了通过层叠在基板（101）上的第一电极层（104），含有有机材料的光电转换层（15）和第二电极层（ 108）。 光电转换层（15）包括P型有机半导体的体异质结构和N型有机半导体，P型有机半导体的电离电位与体异质结构的表观电离电位之间的差为 0.50 eV以下。 因此，可以抑制由于光照射引起的灵敏度劣化。

公开(公告)号：WO2010031011A2

公开(公告)日：2010-03-18

申请号：PCT/US2009/056875

申请日：2009-09-15

Applicant: UDT SENSORS, INC. ,  BUI, Peter, Steven ,  TANEJA, Narayan, Dass

Inventor： BUI, Peter, Steven ,  TANEJA, Narayan, Dass

IPC: H01L31/102 ,  H01L31/18

CPC classification number: H01L27/14636 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14658 ,  H01L31/03529 ,  Y02E10/50

Abstract: The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application.

Abstract translation: 本发明涉及检测器结构，检测器阵列和检测入射辐射的方法。 本发明包括光电二极管阵列和制造光电二极管阵列的方法，其提供降低的辐射损伤敏感性，降低的串扰影响，降低的暗电流（电流泄漏）和增加的应用灵活性。

公开(公告)号：WO2008104761A3

公开(公告)日：2009-01-15

申请号：PCT/GB2008000646

申请日：2008-02-27

Applicant: TOSHIBA KK ,  KARDYNAL BEATA EWA ,  SHIELDS ANDREW JAMES

Inventor： KARDYNAL BEATA EWA ,  SHIELDS ANDREW JAMES

IPC: H01L31/0304 ,  H01L31/0352 ,  H01L31/102

CPC classification number: H01L31/0352 ,  H01L31/0304 ,  H01L31/102 ,  Y02E10/544

Abstract: A photon detector comprising a plurality of quantum dots, a sensing region and measurement means for measuring an electrical characteristic of the sensing region, said sensing region being located such that a change in the charged state of said quantum dots causes a change in the electrical characteristics of said sensing region, the detector further comprising photon counting means for determining the number of photons detected in a pulse of radiation from changes in the electrical characteristics of the sensing region.

Abstract translation: 包括多个量子点的光子检测器，感测区域和用于测量感测区域的电特性的测量装置，所述感测区域被定位成使得所述量子点的充电状态的变化导致电特性的变化 所述检测器还包括光子计数装置，用于根据感测区域的电特性的变化来确定在辐射脉冲中检测的光子的数量。

公开(公告)号：WO2008129433A2

公开(公告)日：2008-10-30

申请号：PCT/IB2008/051173

申请日：2008-03-28

Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V. ,  PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH ,  FRACH, Thomas

Inventor： FRACH, Thomas

IPC: H01L31/102

CPC classification number: H01L27/1443 ,  H01L27/1463 ,  H01L27/14659 ,  H01L31/022408 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/107 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547

Abstract: A photodiode includes an anode (1202, 1302, 1402) and a cathode (1306, 1406) formed on a semiconductor substrate (402). A vertical electrode (702, 1314, 1414) is in operative electrical communication with a buried component (502, 1312, 1412) of the photodiode. In one implementation, the photodiode is an avalanche photodiode of a silicon photomultiplier. The substrate may also include integrated CMOS readout circuitry (1102).

Abstract translation: 光电二极管包括形成在半导体衬底（402）上的阳极（1202，1302，1402）和阴极（1306,1406）。 垂直电极（702,1314,1414）与光电二极管的掩埋部件（502,1312,1412）工作电连通。 在一个实现中，光电二极管是硅光电倍增管的雪崩光电二极管。 衬底还可以包括集成CMOS读出电路（1102）。

公开(公告)号：WO2005114737A3

公开(公告)日：2006-08-10

申请号：PCT/EP2005004332

申请日：2005-04-22

Applicant: ROHDE & SCHWARZ ,  KRAEMER WILHELM

Inventor： KRAEMER WILHELM

IPC: H01L29/45 ,  G02B6/42 ,  H01L23/04 ,  H01L23/08 ,  H01L29/00 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/102 ,  H01L31/12 ,  H03K17/693

CPC classification number: G02B6/4295 ,  G02B6/4201 ,  G02B6/4255 ,  H01L23/04 ,  H01L23/08 ,  H01L31/12 ,  H01L2924/0002 ,  H01L2924/13063 ,  H03K17/693 ,  H01L2924/00

Abstract: An electronic switching component (1) with gallium arsenide-based field effect transistors has its own housing (2) with at least one transparent section (3). An electronic microwave circuit (10) has at least one electronic switching component (1) with gallium arsenide-based field effect transistors and its own housing (2) with at least one transparent section (3). The at least one electronic switching component (1) can be illuminated by means of at least one light source (6, 11).

Abstract translation: 一种电子开关装置（1）用的场效应晶体管上砷化镓基底具有其自己的外壳（2）与至少一个光透射部（3）和电子微波电路（10）包括至少一个电子开关装置（1）与 在砷化镓基体和一个单独的外壳（2）与至少一个光透射部分的场效应晶体管（3），其中，所述至少一个电子开关装置（1）可以通过至少一个光源（6，11）被点亮。

公开(公告)号：WO2006031601A1

公开(公告)日：2006-03-23

申请号：PCT/US2005/032029

申请日：2005-09-08

Applicant: RJ MEARS, LLC ,  MEARS, Robert J. ,  STEPHENSON, Robert John

Inventor： MEARS, Robert J. ,  STEPHENSON, Robert John

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/102 ,  H01L33/00

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/4202 ,  H01L31/173

Abstract: An integrated circuit may include at least one active optical device including a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The integrated circuit may further include a waveguide coupled to the at least one active optical device.

Abstract translation: 集成电路可以包括至少一个有源光学器件，该有源光学器件包括包含多个堆叠的层组的超晶格。 超晶格的每一组层可以包括多个堆叠的基础半导体单层，其限定基础半导体部分和其上的能带改性层。 能带修改层可以包括约束在相邻基础半导体部分的晶格内的至少一个非半导体单层。 集成电路可以进一步包括耦合到至少一个有源光学器件的波导。

公开(公告)号：WO2023065573A1

公开(公告)日：2023-04-27

申请号：PCT/CN2022/075716

申请日：2022-02-09

Applicant: 武汉光谷信息光电子创新中心有限公司 ,  武汉邮电科学研究院有限公司

Inventor： 陈代高 ,  肖希 ,  王磊 ,  刘敏 ,  周佩奇 ,  胡晓 ,  张宇光 ,  余少华

IPC: H01L31/0232 ,  H01L31/102

Abstract: 本公开实施例提供的光电探测器，包括：波导结构、限光结构及吸收结构；其中，所述波导结构延伸至所述限光结构中，且所述波导结构的第一侧壁所在的第一边与所述限光结构的第二侧壁所在的第二边相切；所述波导结构用于将入射光以与所述第一边相切的方向导入所述限光结构中；通过所述限光结构侧壁的全反射将导入的光限制在限光结构内进行环形传输，并通过限光结构将导入的光耦合到吸收结构中；所述吸收结构位于所述限光结构上；通过所述吸收结构侧壁的全反射将耦合的光在水平方向上限制在吸收结构内做进行环形传输，并将耦合的光转化为电子和空穴。

公开(公告)号：WO2022139955A1

公开(公告)日：2022-06-30

申请号：PCT/US2021/057490

申请日：2021-11-01

Applicant: MICROSOFT TECHNOLOGY LICENSING, LLC

Inventor： OH, Minseok ,  NAGARAJA, Satyadev Hulikal ,  BAMJI, Cyrus Soli

IPC: G01S7/4915 ,  G01S17/894 ,  H01L27/146 ,  H01L31/102

Abstract: The use of an always-depleted photodiode in a Time-of-Flight, ToF, depth image sensor is disclosed. One example provides a method of operating a pixel (400) of a depth image sensor, the method comprising receiving photons in a photocharge generation region (410, 412) of the pixel (400), the photocharge generation region (410, 412) of the pixel comprising an always-depleted photodiode formed by a doped first region (410) comprising one of p-doping or n-doping and a more lightly-doped second region (412) comprising the other of p-doping or n-doping. The method further comprises, during an integration phase, energizing a clock gate for a pixel tap, thereby directing photocharge generated in the photocharge generation region (410), 412) to an in-pixel storage comprising a capacitor, and in a readout phase, reading charge out from the in-pixel storage. Pixel (400) further comprises shallow trench isolation, STI, regions (414a, 414b) disposed at the transistor side of pixel (400), and/or a divider region (416) disposed within second region (412) and between clock gates (404a, 404b). Divider region (416) comprises a different doping than more lightly-doped second region (412). The depth image sensor also includes deep trench isolation, DTI, regions (420) comprising a dielectric material disposed between pixels. An always- depleted region is created by P-N junction (402) extending through the thickness of the pixel. As a result, a permanent electric field is created that extends substantially or completely through the depth of the pixel.

公开(公告)号：WO2022086449A1

公开(公告)日：2022-04-28

申请号：PCT/SG2021/050638

申请日：2021-10-21

Applicant: NATIONAL UNIVERSITY OF SINGAPORE

Inventor： OEZYILMAZ, Barbaros ,  TOH, Chee Tat ,  YANG, Qian

IPC: H01L31/028 ,  H01L51/46 ,  H01L31/102 ,  H01L31/0352 ,  B82Y30/00

Abstract: A photodetector comprises a graphene layer formed on a substrate, and a photoactive structure formed on the graphene layer. The photoactive structure comprises quantum dots and a ferroelectric polymer layer, and configured to generate carrier holes when illuminated. The ferroelectric polymer layer has an internal electric field that extends into the graphene layer to facilitate transport of photoinduced carrier holes from the photoactive structure into the graphene layer, thereby improving photoresponse of the photodetector.