摘要:
An RF switching device having distributed shunt switches distributed along transmission lines to improve RF bandwidth as well as the signal isolation of the device. The shunt switches may be physically positioned on both sides of the transmission lines to keep an integrated circuit (IC) design essentially symmetrical so as to provide predictable and reliable operational characteristics. Some embodiments include stacked FET shunt switches and series switches to tolerate high voltages. In some embodiments, the gate resistor for each FET shunt switch is divided into two or more portions.
摘要:
Circuits and methods allowing virtually any number of batteries to be connected in parallel without the supply voltage being substantially reduced, while allowing their capacities to add directly as well as increasing the current capability of the batteries by placing the batteries' internal resistances in parallel.
摘要:
Apparatus and methods for controlling radio frequency (RF) switches are disclosed. Provided herein are apparatus and methods for controlling RF switches, in certain configurations, an RF system includes a charge pump for generating a charge pump voltage, an RF switch, a level shifter for turning on or off the RF switch, and a level shifter control circuit for controlling the level shifter. The charge pump receives a mode signal used to enable or disable the charge pump. Additionally, the level shifter receives power in part from the charge pump voltage, and controls the RF switch based on a switch enable signal. The level shifter control circuit receives the mode signal and biases the level shifter with a bias voltage that changes based on a state of the mode signal.
摘要:
Eine leistungselektronische Schaltung umfasst ein elektrisches erstes Tor mit einem ersten Anschluss und einem zweiten Anschluss und ein magnetisches zweites Tor mit einem ersten unabhängigen Anschluss und einem zweiten unabhängigen Anschluss. Die leistungselektronische Schaltung umfasst einen ersten Parallelast, der eine Serienschaltung aus zumindest einem ersten Schalter, einem zweiten Schalter und einem dritten Schalter aufweist. Die leistungselektronische Schaltung umfasst ferner einen zweiten Paralielast, der parallel mit dem ersten Parallelast verschaltet ist und der eine Serienschaltung aus zumindest einem ersten Schalter, einem zweiten Schalter und einem dritten Schalter aufweist. Der erste Anschluss des ersten Tores ist über jeweils eine Spule mit einem ersten Knoten zwischen dem ersten und dem zweiten Schalter in dem ersten und dem zweiten Parallelast verbunden. Der zweite Anschluss des ersten Tores ist über jeweils eine Spule mit einem zweiten Knoten zwischen dem zweiten und dem dritten Schalter in dem ersten und dem zweiten Parallelast verbunden. Die ersten Knoten sind mit dem ersten magnetischen Anschluss des magnetischen zweiten Tores mittels an diesen Knoten angeschlossener magnetisch gekoppelter Spulen magnetisch gekoppelt. Die zweiten Knoten sind mit dem zweiten magnetischen Anschluss des magnetischen zweiten Tores mittels an diesen Knoten angeschlossener magnetisch gekoppelter Spulen magnetisch gekoppelt.
摘要:
Radio-frequency (RF) switches and devices are disclosed providing improved switch isolation. Disclosed RF switches may include a pole node, a first throw arm connected between the pole node and a first throw node, and a second throw arm connected between the pole node and a second throw node, the second throw arm including first and second field-effect transistors (FETs). RF switches may further include a passive device connected on a first end to a source connector of the first FET and on a second end to a drain connector of the second FET.
摘要:
Various embodiments provide a single pole single throw switch. The switch may include a first terminal, a second terminal and a control terminal; a field-effect transistor having a drain connected to the first terminal, a source connected to the ground, and a gate; a bias resistor connected between the gate of the field-effect transistor and the control terminal; an inductor connected between the first terminal and the second terminal; and a capacitor having one end connected to the second terminal and another end connected to the ground.
摘要:
Various embodiments include apparatus, systems, and methods having a reference node to receive a reference voltage, a first node to provide a signal, and a circuit. Such a circuit may include a second node to receive different voltages greater than the reference voltage and to cause the signal at the first node to switch between a first voltage greater than the reference voltage and a second voltage greater than the reference voltage. Other embodiments including additional apparatus, systems, and methods are described.
摘要:
The present invention relates to a multiplexer (1000) comprising at least a first input (1051), and a second input (1052, 1053, 1054); and one output (1041), connected to the first input via a first pass gate (1031) and to the second input via a second pass gate (1032, 1033, 1034), wherein the first pass gate comprises at least a first double-gate transistor, and the second pass gate comprises at least a second double-gate transistor, and each of the first and second double gate transistor has a first gate (1031 A, 1032A, 1033A, 1034A) controlled based on a first control signal (A) and a second gate (1031 B, 1032B, 1033B, 1034B) controlled based on a second control signal (B). The invention further relates to a look-up table and a FPGA based on the multiplexer.
摘要:
A transmit/receive switch circuit has a comprises a controllable transmit section and a controllable receive section, having an output and an input coupled to an RF transmit/receive terminal respectively. The transmit section comprises a first transistor having a main current channel coupled between an RF transmit signal input and the RF transmit/receive terminal. The receive section comprises a first transistor having a main current channel coupled between the RF transmit/receive terminal and a RF receive signal output and a second transistor having a main current channel coupled between the RF receive signal output and ground. A signal that is derived from an RF input signal at the RF transmit/receive terminal is rectified. The rectified signal is used to control a control electrode of the second transistor of the receive section to make this transistor increasingly conductive with increasing RF signal amplitude. The rectified signal may also be used to control a control electrode of the first transistor of the transmit section in this way. Thus, the transmit/receive switch circuit is made to perform a limiting function.