公开(公告)号：WO2004074556A2

公开(公告)日：2004-09-02

申请号：PCT/JP2004001653

申请日：2004-02-16

Applicant: UNIV WASEDA ,  ICHINOSE NOBORU ,  SHIMAMURA KIYOSHI ,  AOKI KAZUO ,  GARCIA VILLORA ENCARNACION ANT

Inventor： ICHINOSE NOBORU ,  SHIMAMURA KIYOSHI ,  AOKI KAZUO ,  GARCIA VILLORA ENCARNACION ANT

IPC: C30B23/02 ,  H01L33/02 ,  H01L33/26 ,  C30B

CPC classification number: C30B29/16 ,  C30B23/02 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02631 ,  H01L33/005 ,  H01L33/18 ,  H01L33/26

Abstract: A method for growing a beta-Ga2O3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a Ga2O3 light-emitting device capable of emitting light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and a polycrystalline material are rotated in mutually opposite directions and heated, and a beta-Ga2O3 single crystal is grown in one direction selected from among the a-axis direction, the b-axis direction, and c-axis direction. A thin film of a beta-Ga2O3 single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target. Ga atoms are released from the target by a thermal and photochemical action. The free Ga atoms are bonded to radicals in the atmosphere in the chamber. Thus, a thin-film of a beta-Ga2O3 single crystal is grown on a substrate of a beta-Ga2O3 single crystal. A light-emitting device comprises an n-type substrate produced by doping a beta-Ga2O3 single crystal with an n-type dopant and a p-type layer produced by doping the beta-Ga2O3 single crystal with a p-type dopant and junctioned to the top of the n-type substrate. The light-emitting device emits light from the junction portion.

Abstract translation: 生长β-Ga2O3单晶的方法难以开裂并且具有弱的孪晶倾向和改善的结晶度，用于生长具有高质量的薄膜单晶的方法，能够发射紫外线的Ga 2 O 3发光器件 区域及其制造方法。 在红外加热单晶体制造系统中，晶种和多晶材料沿相反方向旋转并加热，并且在从a轴<100>方向选择的一个方向上生长β-Ga 2 O 3单晶， b轴<010>方向和c轴<001>方向。 由PLD形成β-Ga2O3单晶的薄膜。 将激光束施加到靶上以激发构成靶的原子。 Ga原子通过热和光化学作用从靶释放出来。 游离的Ga原子与腔中的大气中的自由基结合。 因此，在β-Ga 2 O 3单晶的衬底上生长β-Ga 2 O 3单晶的薄膜。 发光器件包括通过掺杂具有n型掺杂剂的β-Ga 2 O 3单晶和通过用p型掺杂剂掺杂β-Ga 2 O 3单晶而产生的p型层而制造的n型衬底，并且结合到 n型衬底的顶部。 发光装置从接合部发射光。

公开(公告)号：WO0231890A3

公开(公告)日：2003-03-06

申请号：PCT/US0142640

申请日：2001-10-12

Applicant: UNIV NORTH CAROLINA STATE ,  NARAYAN JAGDISH ,  SHARMA AJAY KUMAR ,  MUTH JOHN F

Inventor： NARAYAN JAGDISH ,  SHARMA AJAY KUMAR ,  MUTH JOHN F

IPC: H01L29/221 ,  H01L31/18 ,  H01L33/26 ,  H01L33/28 ,  H01L31/0296 ,  H01L21/34 ,  H01L33/00

CPC classification number: H01L33/28 ,  H01L29/221 ,  H01L31/1828 ,  H01L33/26 ,  Y02E10/543

Abstract: An electronic device has an alloy layer containing magnesium oxide and at least one of zinc oxide and cadmium oxide and having a cubic structure on a substrate. The alloy layer may be directly on the substrate or, alternatively, one or more buffer layers may be between the alloy layer and the substrate. The alloy layer may be domain-matched epitaxially grown directly on the substrate, or may be lattice-matched epitaxially grown directly on the buffer layer. The cubic layer may also be used to form single and multiple quantum wells. Accordingly, electronic devices having wider bandgap, increased binding energy of excitons, and/or reduced density of growth and/or misfit dislocations in the active layers as compared with conventional III-nitride electronic devices may be provided.

Abstract translation: 电子器件具有包含氧化镁和氧化锌和氧化镉中的至少一种并且在衬底上具有立方结构的合金层。 合金层可以直接在衬底上，或者，一个或多个缓冲层可以在合金层和衬底之间。 合金层可以直接在衬底上外延生长，或者可以直接在缓冲层上外延生长的晶格匹配。 立方体层也可用于形成单个和多个量子阱。 因此，与传统的III族氮化物电子器件相比，可以提供具有更宽的带隙，增加的激子结合能和/或有源层中生长和/或失配位错密度的电子器件。

公开(公告)号：WO98036407A1

公开(公告)日：1998-08-20

申请号：PCT/JP1998/000656

申请日：1998-02-17

IPC: G09G3/00 ,  G09G3/32 ,  H01L27/32 ,  H01L33/08 ,  H01L33/26 ,  H01L33/42 ,  H01L51/52 ,  G09G3/30 ,  H01L33/00 ,  H05B33/08 ,  H05B33/26

CPC classification number: G09G3/3233 ,  G09G3/006 ,  G09G3/3258 ,  G09G3/3266 ,  G09G2300/0408 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0439 ,  G09G2300/0465 ,  G09G2300/08 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2300/0847 ,  G09G2300/0876 ,  G09G2310/0254 ,  G09G2310/0256 ,  G09G2310/0262 ,  G09G2310/0283 ,  G09G2310/06 ,  G09G2320/043 ,  G09G2330/021 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3262 ,  H01L27/3276 ,  H01L51/0005 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5281 ,  H01L51/5284 ,  H01L2251/5315

Abstract: A driving system taking into consideration the conductivity of a TFT which controls the light emitting operations of a current-driven light emitting element. When an N-channel type TFT is used as the second TFT (30) which switches supply of a driving current to a light emitting element (40), a high gate voltage (Vgcur) is obtained by lowering the potential at a common feeder line (com) against the potential at the counter electrode (op) of the element (40). A p-channel TFT is used as a first TFT (20) and the polarity of the low potential of a scanning signal (Sgate), and the potential at the common feeder line (com) is made equal to that of the potential at a potential holding electrode (st) at turning-on time. The driving voltage of the light emitting element is dropped and the display quality of the element is improved by shifting the potential of picture signals (data) for turning on in the direction in which the turning-on resistances of the TFTs (20 and 30) become smaller within the range of the driving voltage of the display device (1).

Abstract translation: 考虑到控制电流驱动发光元件的发光操作的TFT的导电性的驱动系统。 当使用N沟道型TFT作为切换向发光元件（40）的驱动电流供给的第二TFT（30）时，通过降低公共馈线的电位来获得高栅极电压（Vgcur） （op）相对于元件（40）的对电极（op）的电位。 使用p沟道TFT作为第一TFT（20），并且使扫描信号（Sgate）的低电位的极性和公共馈线（com）处的电位等于在a的电位的极性 电位保持电极（st）在导通时间。 通过在TFT（20,30）的导通电阻方向上移动用于导通的图像信号（数据）的电位，使发光元件的驱动电压下降，并且提高元件的显示质量， 在显示装置（1）的驱动电压的范围内变小。

公开(公告)号：WO2023026970A1

公开(公告)日：2023-03-02

申请号：PCT/JP2022/031336

申请日：2022-08-19

Applicant: 日本化学工業株式会社

Inventor： 坂上　知 ,  中對　一博

IPC: C01B25/08 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/08 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H01L33/26

Abstract: コアに少なくともリン源とインジウム源との反応により得られたＩｎＰ系量子ドットを有し、シェルにＩｎＰ系以外の被覆化合物を有するコアシェル構造であって発光スペクトルの半値全幅（ＦＷＨＭ）及び対称性に優れた量子ドットを製造するための方法であって、前記コアに前記被覆化合物を被覆させるときの反応を、複数種のアミン誘導体を含有する溶媒中で行い、前記被覆化合物は、少なくとも亜鉛源との反応により得られるものであることが好ましい。

公开(公告)号：WO2022035101A1

公开(公告)日：2022-02-17

申请号：PCT/KR2021/009891

申请日：2021-07-29

Applicant: 삼성디스플레이 주식회사

Inventor： 박미진 ,  김진선 ,  김진영 ,  박상호 ,  송근규 ,  장우근

IPC: H01L27/15 ,  H01L33/00 ,  H01L21/768 ,  H01L33/26

Abstract: 표시 장치가 제공된다. 표시 장치는 복수의 화소들을 포함하는 기판, 상기 기판 상에서 서로 이격된 제1 전극 및 제2 전극, 상기 제1 전극과 상기 제2 전극 사이에 배치된 발광 소자, 및 상기 발광 소자 상에 배치된 도전 패턴을 포함하고, 상기 발광 소자는 제1 반도체층, 제2 반도체층, 및 상기 제1 반도체층과 상기 제2 반도체층 사이에 배치된 활성층을 포함하고, 상기 도전 패턴은 상기 활성층과 중첩하되, 상기 제1 반도체층 또는 상기 제2 반도체층과 비중첩한다.

公开(公告)号：WO2021253829A1

公开(公告)日：2021-12-23

申请号：PCT/CN2021/073203

申请日：2021-01-22

Applicant: 武汉大学

Inventor： 张顺平 ,  徐红星 ,  吴宇

IPC: H01L33/00 ,  H01L33/26 ,  H01L33/36 ,  H01L33/0004

Abstract: 本发明公开了一种兼具高量子产率和高带宽的光源，与外连接电路连接，包括：基底、超光滑电极、绝缘层、二维发光材料和纳米颗粒；超光滑电极设置在基底表面，两个电极分别于外接电路的高压端和低压端连接；绝缘层在其中一个超光滑电极表面；二维发光材料的一端在超光滑电极和所述绝缘层的交叠区域，另一端与第二电极相连；纳米颗粒在超光滑电极和绝缘层及二维发光材料的交叠区域。本发明具有兼具响应速度快、量子产率高的优点，且可进行平面图案化。

公开(公告)号：WO2021229356A1

公开(公告)日：2021-11-18

申请号：PCT/IB2021/053652

申请日：2021-05-01

Applicant: SILANNA UV TECHNOLOGIES PTE LTD

Inventor： ATANACKOVIC, Petar

IPC: H01L33/26 ,  H01L21/02 ,  H01L33/00 ,  H01L21/20

Abstract: An optoelectronic semiconductor light emitting device configured to emit light having a wavelength in the range from about 150 nm to about 425 nm is disclosed. In embodiments, the device comprises a substrate having at least one epitaxial semiconductor layer disposed thereon, wherein each of the one or more epitaxial semiconductor layers comprises a metal oxide. Also disclosed is an optoelectronic semiconductor device for generating light of a predetermined wavelength comprising a substrate and an optical emission region. The optical emission region has an optical emission region band structure configured for generating light of the predetermined wavelength and comprises one or more epitaxial metal oxide layers supported by the substrate.

公开(公告)号：WO2021221437A1

公开(公告)日：2021-11-04

申请号：PCT/KR2021/005309

申请日：2021-04-27

Applicant: 국민대학교 산학협력단

Inventor： 도영락

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/36 ,  H01L33/26

Abstract: 본 발명은 제1 도전성 반도체층, 광활성층 및 제2 도전성 반도체층이 순차적으로 적층된 LED 웨이퍼를 준비하는 단계; LED 웨이퍼의 제2 도전성 반도체층 상에 전극층 또는 전기적 극성이 서로 상이한 영역이 인접하도록 패터닝된 분극유도층을 형성시키는 단계; 낱 개의 소자가 나노 또는 마이크로 크기인 길이와 너비를 갖는 평면을 가지며, 평면에 수직인 두께가 길이보다 작도록 LED 웨이퍼를 두께방향으로 식각하여 다수 개의 마이크로-나노핀 LED 기둥을 형성시키는 단계; 및 다수 개의 마이크로-나노핀 LED 기둥을 LED 웨이퍼로부터 분리시키는 단계;를 포함하는 마이크로-나노핀 LED 소자 제조방법에 관한 것이다. 본 발명에 따른 마이크로-나노 핀 LED 소자는 발광면적을 증가시키면서 표면에 노출된 광활성층 면적은 크게 줄여서 효율 저하를 방지 또는 최소화할 수 있다.

公开(公告)号：WO2021132841A1

公开(公告)日：2021-07-01

申请号：PCT/KR2020/011758

申请日：2020-09-02

Applicant: 엘지디스플레이 주식회사

Inventor： 권규오 ,  심재민 ,  이승준 ,  최정훈

IPC: H01L27/15 ,  H01L25/16 ,  H01L33/38 ,  H01L33/26 ,  H01L33/62 ,  H01L33/00

Abstract: 본 출원은 LED 표시장치에 관한 것으로, 특히 고해상도 및 발광부 면적이 증가되는 LED 표시장치에 관한 것이다. 본 발명의 특징은 제 1 발광영역과 제 2 발광영역이 서로 중첩되어 위치하도록 하며, 제 1 발광영역과 제 3 발광영역이 서로 중첩되어 위치하도록 함으로써, 하나의 픽셀에서 R, G, B 컬러가 모두 구현되도록 할 수 있어, R, G, B 서브픽셀을 각각 필요로 했던 기존에 비해 픽셀의 사이즈를 줄일 수 있게 된다.

公开(公告)号：WO2020237373A1

公开(公告)日：2020-12-03

申请号：PCT/CA2020/050720

申请日：2020-05-27

Applicant: VUEREAL INC.

Inventor： CHAJI, Gholamreza

IPC: H01L33/00 ,  H01L31/12 ,  H01L33/26 ,  H01L33/36

Abstract: An optoelectronic device comprising a pad substrate comprising an array of pads connected to a driving circuit; and a device layer structure deposited on a substrate, wherein the device layer structure including a plurality of active layers and conductive layers; and a pillar layer formed on or part of a first conductive layer, wherein the pillar layer is patterned into array of pillars to create pixelated micro devices and wherein the array of pillars is bonded to the array of pads. The redundant pillars that are not bonded to the array of pads may be provided a fixed voltage or used as sensors.