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公开(公告)号：WO2023073404A1
公开(公告)日：2023-05-04
申请号：PCT/IB2021/059945
申请日：2021-10-27
Applicant: SILANNA UV TECHNOLOGIES PTE LTD
Inventor： ATANACKOVIC, Petar
Abstract: Methods and systems of heating a substrate in a vacuum deposition process include a resistive heater having a resistive heating element. Radiative heat emitted from the resistive heating element has a wavelength in a mid-infrared band from 5 µm to 40 µm that corresponds to a phonon absorption band of the substrate. The substrate comprises a wide bandgap semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface. The resistive heater and the substrate are positioned in a vacuum deposition chamber. The uncoated surface of the substrate is spaced apart from and faces the resistive heater. The uncoated surface of the substrate is directly heated by absorbing the radiative heat.
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公开(公告)号：WO2023084274A1
公开(公告)日：2023-05-19
申请号：PCT/IB2021/060413
申请日：2021-11-10
Applicant: SILANNA UV TECHNOLOGIES PTE LTD
Inventor： ATANACKOVIC, Petar
Abstract: A semiconductor structure includes an epitaxial oxide material, such as (AlxGa1-x)yOz where 0≤x≤1, 1≤y≤3, and 2≤z≤4. The semiconductor structure can include one or more superlattices comprising epitaxial oxide materials. The semiconductor structure can include one or more doped superlattices comprising host layers and impurity layers, wherein the host layers comprise an epitaxial oxide material. The semiconductor structure can include one or more graded layers or regions comprising epitaxial oxide materials. The semiconductor structure can include one or more chirp layers comprising epitaxial oxide materials. In some cases, the chirp layer can be adjacent to a metal layer. The semiconductor structure can be a portion of a semiconductor device, such as an optoelectronic device, a light emitting diode, a laser diode, a photodetector, a solar cell, a high-power diode, a high-power transistor, a transducer, or a high electron mobility transistor.
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Patent Agency Ranking
公开(公告)号：WO2019234557A1
公开(公告)日：2019-12-12
申请号：PCT/IB2019/054463
申请日：2019-05-29
Applicant: SILANNA UV TECHNOLOGIES PTE LTD
Inventor： ATANACKOVIC, Petar
IPC: H01L21/67 , H01L21/02 , H01L21/285
Abstract: Systems and methods for forming semiconductor layers, including oxide-based layers, are disclosed in which a material deposition system has a rotation mechanism that rotates a substrate around a center axis of a substrate deposition plane of the substrate. A material source that supplies a material to the substrate has i) an exit aperture with an exit aperture plane and ii) a predetermined material ejection spatial distribution from the exit aperture plane. The exit aperture is positioned at an orthogonal distance, a lateral distance, and a tilt angle relative to the center axis of the substrate. The system can be configured for either i) minimum values for the orthogonal distance and the lateral distance to achieve a desired layer deposition uniformity using a set tilt angle, or ii) the tilt angle to achieve the desired layer deposition uniformity using a set orthogonal distance and a set lateral distance.
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公开(公告)号：WO2017145026A1
公开(公告)日：2017-08-31
申请号：PCT/IB2017/050880
申请日：2017-02-16
Applicant: SILANNA UV TECHNOLOGIES PTE LTD
Inventor： ATANACKOVIC, Petar
CPC classification number: H01L33/105 , H01L33/0012 , H01L33/0025 , H01L33/0045 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/405 , H01L33/46 , H01L33/465 , H01L2933/0025 , H01S5/18375 , H01S5/187 , H01S5/34333 , H01S2301/173
Abstract: Resonant optical cavity light emitting devices and method of producing such devices are disclosed. The device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector has a metal composition comprising elemental aluminum. Using a three-dimensional electromagnetic spatial and temporal simulator, it is determined if an emission output at an exit plane relative to the substrate meets a predetermined criterion. The light emitting region is placed at a final separation distance from the reflector, where the final separation distance results in the predetermined criterion being met.
Abstract translation: 公开了共振光学腔发光器件和制造这种器件的方法。 该器件包括衬底，第一间隔区域，发光区域，第二间隔区域和反射器。 发光区域被配置为发射目标发射深紫外波长，并且被定位在离反射器的分开距离处。 反射器具有包含元素铝的金属组合物。 使用三维电磁空间和时间模拟器，确定在出射面相对于衬底的发射输出是否满足预定标准。 发光区域被放置在与反射器的最终间隔距离处，其中最终间隔距离导致满足预定标准。
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公开(公告)号：WO2023084283A1
公开(公告)日：2023-05-19
申请号：PCT/IB2021/060466
申请日：2021-11-11
Applicant: SILANNA UV TECHNOLOGIES PTE LTD
Inventor： ATANACKOVIC, Petar
IPC: H01L29/778 , H01L33/16 , H01L33/00 , C30B29/26 , C30B29/68
Abstract: A semiconductor structure can include two or more epitaxial oxide materials with different properties, such as compositions, crystal symmetries, or bandgaps. The semiconductor structures can comprise one or more epitaxial oxide layers formed on a compatible substrate with in-plane lattice parameters and atomic positions that provide a suitable template for the growth of the epitaxial oxide materials. One or more of the epitaxial oxide materials can be strained. One or more of the epitaxial oxide materials can be doped n- or p-type. The semiconductor structure can comprise a superlattice with epitaxial oxide materials. The semiconductor structure can comprise a chirp layer with epitaxial oxide materials. The semiconductor structures can be a portion of a semiconductor device, such as an optoelectronic device, a light emitting diode, a laser diode, a photodetector, a solar cell, a high-power diode, a high-power transistor, a transducer, or a high electron mobility transistor.
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公开(公告)号：WO2021229356A1
公开(公告)日：2021-11-18
申请号：PCT/IB2021/053652
申请日：2021-05-01
Applicant: SILANNA UV TECHNOLOGIES PTE LTD
Inventor： ATANACKOVIC, Petar
Abstract: An optoelectronic semiconductor light emitting device configured to emit light having a wavelength in the range from about 150 nm to about 425 nm is disclosed. In embodiments, the device comprises a substrate having at least one epitaxial semiconductor layer disposed thereon, wherein each of the one or more epitaxial semiconductor layers comprises a metal oxide. Also disclosed is an optoelectronic semiconductor device for generating light of a predetermined wavelength comprising a substrate and an optical emission region. The optical emission region has an optical emission region band structure configured for generating light of the predetermined wavelength and comprises one or more epitaxial metal oxide layers supported by the substrate.
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公开(公告)号：WO2023084275A1
公开(公告)日：2023-05-19
申请号：PCT/IB2021/060414
申请日：2021-11-10
Applicant: SILANNA UV TECHNOLOGIES PTE LTD
Inventor： ATANACKOVIC, Petar
Abstract: Various forms of MgxGe1-xO2-x are disclosed, where the MgxGe1-xO2-x are epitaxial layers formed on a substrate comprising a substantially single crystal substrate material. The epitaxial layer of MgxGe1-xO2-x has a crystal symmetry compatible with the substrate material. Semiconductor structures and devices comprising the epitaxial layer of MgxGe1-xO2-x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.
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