INTEGRATED SYSTEM FOR PROCESSING SEMICONDUCTOR WAFERS
    31.
    发明申请
    INTEGRATED SYSTEM FOR PROCESSING SEMICONDUCTOR WAFERS 审中-公开
    用于加工半导体波形的集成系统

    公开(公告)号:WO02058116A3

    公开(公告)日:2003-02-27

    申请号:PCT/US0200948

    申请日:2002-01-14

    申请人: NUTOOL INC

    摘要: An integrated system for processing a plurality of wafers, having a conductive front surface, is provided. The system includes a plurality of processing subsystems for depositing on or removing metal from the front surfaces of the wafers. Each processing subsystem includes a process chamber and a cleaning chamber. The system also has a wafer handling subsystem for transporting each of the wafers into or out of the appropriate one of the plurality of processing subsystems. The plurality of processing subsystems and wafer handling subsystem form an integrated system.

    摘要翻译: 提供了一种用于处理具有导电前表面的多个晶片的集成系统。 该系统包括用于从晶片的前表面沉积或从金属表面去除金属的多个处理子系统。 每个处理子系统包括处理室和清洁室。 该系统还具有晶片处理子系统,用于将每个晶片输送到多个处理子系统中的适当的一个处理子系统中或从其中移出。 多个处理子系统和晶片处理子系统形成集成系统。

    METHOD AND APPARATUS FOR ELECTROCHEMICAL PLANARIZATION OF A WORKPIECE
    32.
    发明申请
    METHOD AND APPARATUS FOR ELECTROCHEMICAL PLANARIZATION OF A WORKPIECE 审中-公开
    工业电化学平面化方法与装置

    公开(公告)号:WO02029859A2

    公开(公告)日:2002-04-11

    申请号:PCT/US2001/031034

    申请日:2001-10-04

    摘要: An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a platen, a conductive element disposed adjacent the platen and a polishing surface disposed adjacent the conductive element. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing surface while causing relative motion between the workpiece and the polishing surface. A voltage source is configured to effect an electric potential difference between the metallized surface on the workpiece and the conductive element so that an electric field is produced between the metallized surface and the conductive element. The apparatus further includes a solution application mechanism configured to supply an electrolytic solution to the polishing surface.

    摘要翻译: 用于平坦化工件上的金属化表面的电化学平面化装置包括压板,邻近压板设置的导电元件和邻近导电元件设置的抛光表面。 工件载体构造成承载工件并将工件压靠在抛光表面上,同时引起工件和抛光表面之间的相对运动。 电压源被配置为实现工件上的金属化表面与导电元件之间的电位差,使得在金属化表面和导电元件之间产生电场。 该设备还包括一个配置成将电解液供应到抛光表面的溶液施加机构。

    METHOD IN AND APPARATUS FOR ETCHING OR PLATING OF SUBSTRATES
    33.
    发明申请
    METHOD IN AND APPARATUS FOR ETCHING OR PLATING OF SUBSTRATES 审中-公开
    用于蚀刻或沉积基板的方法和装置

    公开(公告)号:WO01079589A1

    公开(公告)日:2001-10-25

    申请号:PCT/SE2001/000823

    申请日:2001-04-12

    摘要: In a method for processing a substrate (S), for instance by etching or plating, use is made of an apparatus comprising a chamber (1) for receiving the substrate (S), a unit (10) for feeding a processing fluid to the chamber (1) before and/or during processing, and a flushing unit (20) for cleaning the substrate (S) by means of a flushing fluid after completed processing. The flushing unit (20) comprises a flushing fluid tank (21), a cleaning device (20') and a fluid feeding means (22, 24), the fluid feeding means (22, 24) being arranged to feed from the flushing fluid tank (21) the flushing fluid through the chamber (1) for cleaning the substrate (S) received therein, through the cleaning device (20') for cleaning the flushing fluid and back to the flushing fluid tank (21). Thus, the working operations for cleaning the processed substrate (S) are significantly simplified. The cleaning can easily be automated without necessitating expensive auxiliary equipment. Moreover cleaning takes place in an essentially closed environment inside the chamber (1), thereby minimising the environment's exposure to substances which are dangerous to health. Moreover, an essentially closed process with a minimum of emissions of environmentally dangerous residual products, such as metal ions, is made possible.

    摘要翻译: 在用于处理衬底(S)的方法中,例如通过蚀刻或电镀,使用包括用于接收衬底(S)的腔室(1)的装置,用于将处理流体供给到衬底 在处理之前和/或处理期间的室(1)和用于在完成处理之后通过冲洗流体清洁衬底(S)的冲洗单元(20)。 冲洗单元(20)包括冲洗流体箱(21),清洁装置(20')和流体供给装置(22,24),流体供给装置(22,24)被布置成从冲洗流体 罐(21)通过所述室(1)冲洗流体,用于清洁其中容纳的基板(S),通过清洁装置(20')清洁冲洗流体并返回到冲洗液箱(21)。 因此,用于清洗处理过的基板(S)的工作操作大大简化。 清洁可以很容易地自动化,而不需要昂贵的辅助设备。 此外,清洁发生在室(1)内的基本封闭的环境中,从而最小化对环境危害健康的物质的环境暴露。 此外,可以实现具有最少排放环境危害的残余产物(如金属离子)的基本封闭的方法。

    SEMICONDUCTOR WORKPIECE PROXIMITY PLATING METHODS AND APPARATUS
    34.
    发明申请
    SEMICONDUCTOR WORKPIECE PROXIMITY PLATING METHODS AND APPARATUS 审中-公开
    半导体工件临近镀层方法和装置

    公开(公告)号:WO0152307A2

    公开(公告)日:2001-07-19

    申请号:PCT/US0100958

    申请日:2001-01-10

    申请人: NUTOOL INC

    摘要: The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment of the invention, the pad or blade type objects are mounted on the cylindrical anodes and rotated about a first axis while the workpiece may be stationary or rotate about a second axis, and metal from the electrolyte solution is deposited on the workpiece when a potential difference is applied between the workpiece and the anode. In another embodiment of the present invention, the plating apparatus includes an anode plate spaced apart from the cathode workpiece. Upon application of power to the anode plate and the cathode workpiece, the electrolyte solution disposed in the plating apparatus is used to deposit the conductive material on the workpiece surface using cylindrical rollers having the pad or blade type objects.

    摘要翻译: 本发明涉及通过旋转靠近基板的垫片或刀片型物体来在半导体衬底上镀覆导电材料的方法和装置,从而消除/减少凹陷和空隙。 这通过提供安装在圆柱形阳极或辊子上的垫片或刀片型物体,并使用设置在垫片上或穿过垫片上的电解质溶液将导电材料施加到衬底来实现。 在本发明的一个实施例中,衬垫或刀片型物体安装在圆柱形阳极上并围绕第一轴线旋转,同时工件可以是静止的或围绕第二轴线旋转,并且来自电解质溶液的金属沉积在工件上, 在工件和阳极之间施加电位差。 在本发明的另一实施例中,电镀装置包括与阴极工件间隔开的阳极板。 在向阳极板和阴极工件施加电力时,使用设置在电镀装置中的电解液将导电材料沉积在工件表面上,使用具有焊盘或刀片型物体的圆柱形辊。

    METHOD AND DEVICE FOR THE ELECTROLYTIC TREATMENT OF ELECTRICALLY CONDUCTING STRUCTURES WHICH ARE INSULATED FROM EACH OTHER AND POSITIONED ON THE SURFACE OF ELECTRICALLY INSULATING FILM MATERIALS AND USE OF THE METHOD
    35.
    发明申请
    METHOD AND DEVICE FOR THE ELECTROLYTIC TREATMENT OF ELECTRICALLY CONDUCTING STRUCTURES WHICH ARE INSULATED FROM EACH OTHER AND POSITIONED ON THE SURFACE OF ELECTRICALLY INSULATING FILM MATERIALS AND USE OF THE METHOD 审中-公开
    METHOD AND APPARATUS FOR电解处理相互电绝缘,导电结构上的电绝缘膜材料的表面和程序中的应用

    公开(公告)号:WO01029289A1

    公开(公告)日:2001-04-26

    申请号:PCT/DE2000/003568

    申请日:2000-10-05

    摘要: The invention relates to the electrolytic treatment of electrically conducting structures (4) which are insulated from each other and positioned on the surface of electrically insulating film material (Fo) whereby a method is employed wherein a material is discharged from a reservoir (15', 15'') and then transported from a conveyor belt through a treatment unit (1) and brought into contact with said treatment liquid (Fl). During transport, the material (Fo) is moved past at least one electrode device consisting of at least one cathode poled electrode (6) and at least one anode poled electrode (7). At least one cathode poled electrode (6) and at least one anode poled electrode (7) is brought into contact with a treatment liquid (Fl) and connected to an electrical/voltage source (8). A current then flows through the electrodes (6, 7) and said electrically conducting structures (4). The electrodes (6, 7) are shielded against each other in such a way that no electrical current can flow between the oppositely poled electrodes (6, 7). The material (Fo) is then loaded into a reservoir (15', 15'').

    摘要翻译: 上电绝缘膜材料(FO)的表面互相电绝缘的,导电结构(4)的电解处理中,使用一种方法,其中一个存储器(15“ 15' ”)的材料被排出时,则传送路径上 通过一个处理单元(1)与处理流体(F1),由此输送抵接。 在运输过程中,所述材料(FO)是至少一个电极布置中,每个由至少一个阴极极化电极(6)和至少一个阳极极化的电极(7),被引导经过所述至少一个阴极极化电极(6)和至少在 放置在阳极极化电极(7)与所接触的处理流体(F1)和被连接到电流/电压源(8)。 从而,电流流过电极(6,7)和所述导电结构(4)。 电极(6,7)是这样被彼此基本上相反极化的电极之间直接没有电流(6,7)可以流动屏蔽。 最后,该材料(FO)回的存储器(15 '15' ')被加载。

    DEVICE AND METHOD FOR THE PARTIAL ELECTROCHEMICAL TREATMENT OF BAR-SHAPED ELEMENTS
    36.
    发明申请
    DEVICE AND METHOD FOR THE PARTIAL ELECTROCHEMICAL TREATMENT OF BAR-SHAPED ELEMENTS 审中-公开
    FOR PARTIAL电化学治疗棒状材料的设备和方法的待处理

    公开(公告)号:WO01004385A1

    公开(公告)日:2001-01-18

    申请号:PCT/DE2000/002307

    申请日:2000-07-12

    IPC分类号: C25D5/02 C25D7/00 C25F7/00

    CPC分类号: C25D7/00 C25D5/022 C25F7/00

    摘要: The invention relates to a device and method for the partial electrochemical treatment of bars (10) in dipping bath installations. Said device and method aims to solve the problem that the bars (10) which are held in various positions by holding pliers during treatment should only be treated electrochemically in precisely defined central areas. To this end, the bars (10) are inserted into membrane supports (23), used to fix shielding diaphragms (8) for the bars (10) and into electrodes (30) and are electrochemically treated once they have reached a position for electroplating. In order for the bars (10) to reach said electroplating position, they are first inserted into the membrane supports (23) until they reach a defined adjusting position, whereby the membrane supports (23) are displaced into a locking position. The membrane supports (23) are subsequently fixed in said locking position and the bars (10) are then moved into the electroplating position.

    摘要翻译: 对于杆在浸植物电化学局部处理(10)中描述的电化学装置和方法与该问题是这样解决的,随着变化的处理(10)中保持位置保持夹具保持的棒电化学在精确限定的中间区域仅处理 是。 为此,所述杆(10)是用于保持Abschirmmembranen为(8)的杆(10),供应膜支撑(23)和缩回到电极(30)和在达到Galvanisierposition之后进行电化学处理。 为了实现杆的Galvanisierposition(10)被第一缩回起来在膜载体(23)所定义的调整位置,其中所述膜载体(23)在锁定位置移位。 此后,将膜载体(23)被锁定在所述锁定位置和所述杆(10)最后,在Galvanisierposition的过程。

    ELECTROCHEMICAL ETCHING INSTALLATION AND METHOD FOR ETCHING A BODY TO BE ETCHED
    37.
    发明申请
    ELECTROCHEMICAL ETCHING INSTALLATION AND METHOD FOR ETCHING A BODY TO BE ETCHED 审中-公开
    电化学蚀刻系统和方法用于蚀刻的体蚀刻

    公开(公告)号:WO00060143A1

    公开(公告)日:2000-10-12

    申请号:PCT/DE2000/000857

    申请日:2000-03-17

    CPC分类号: C25F7/00 Y10S204/12

    摘要: The invention relates to an electrochemical etching cell (1) for etching a body (15) which is to be etched and which is comprised, at least superficially, of a material to be etched. Said etching cell (1) comprises at least one chamber filled with an electrolyte and is provided with a first electrode (13), said first electrode being comprised, at least superficially, of a first electrode material, as well as with a second electrode (13') that is comprised, at least superficially, of a second electrode material. In addition, the body (15) to be etched is brought, at least in areas, into contact with the electrolyte. The first electrode material and the second electrode material are selected such that, after etching, the body (15) to be etched is not contaminated and/or the properties thereof are not impaired by the electrode materials. The electrode materials are, in particular, comprised of the same materials as those of the etching material. The invention also relates to a method for etching a body (15) to be etched while using said etching cell (1), whereby the first and/or second electrode (13, 13') is/are used as sacrificial electrodes. The inventive etching cell is especially suited for etching silicon wafers in a CMOS-compatible production line.

    摘要翻译: 它提出了一种电化学蚀刻电池(1)用于蚀刻的蚀刻体(15),其由至少一个碱性材料的表面上。 蚀刻小区(1)已填充有电解质腔室的至少一个,并且设置有一个第一电极(13),其具有至少一个第一电极材料和第二电极(13“)的表面上,具有所述表面的至少一个第二电极材料,提供 , 蚀刻本体(15)还至少部分地与接触的电解质。 第一电极材料和第二电极材料被选择为使得所述蚀刻体(15)通过所述的电极材料不被蚀刻污染和/或在其属性不受影响。 特别地,该电极材料是相同的材料作为蚀刻材料。 此外,用于蚀刻的蚀刻体(15)与该蚀刻亭(1)提出了一种方法,其中,所述第一和/或第二电极(13,13“)被用作牺牲电极。 所提出的蚀刻细胞特别适用于在CMOS兼容的生产线蚀刻硅晶片。

    METHOD AND APPARATUS FOR PLATING AND POLISHING A SEMICONDUCTOR SUBSTRATE
    38.
    发明申请
    METHOD AND APPARATUS FOR PLATING AND POLISHING A SEMICONDUCTOR SUBSTRATE 审中-公开
    一种半导体衬底的镀层和抛光方法与装置

    公开(公告)号:WO00059682A1

    公开(公告)日:2000-10-12

    申请号:PCT/US2000/008336

    申请日:2000-03-29

    摘要: The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate (2) and then polishes the same substrate (2). This is achieved by providing multiple chambers (100, 200) in a single apparatus, where one chamber (100) can be used for plating/depositing the conductive material and another chamber (200) can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electrochemical mechanical deposition and the polishing process can be performed using electropolishing or chemical mechanical polishing. The present invention further provides a method and apparatus for intermittently applying the conductive material to the semiconductor substrate (2) and also intermittently polishing the substrate (2) when such conductive material is not being applied to the substrate (2). Furthermore, the present invention provides a method and apparatus that plates/deposits and/or polishes a conductive material and improves the electrolyte mass transfer properties on a substrate (2) using a novel anode assembly.

    摘要翻译: 本发明提供一种在半导体衬底(2)上沉积/沉积导电材料然后抛光相同衬底(2)的方法和装置。 这通过在单个设备中提供多个室(100,200)来实现,其中一个室(100)可用于电镀/沉积导电材料,另一个室(200)可用于抛光半导体衬底。 电镀/沉积工艺可以使用刷镀或电化学机械沉积进行,并且可以使用电抛光或化学机械抛光进行抛光工艺。 本发明还提供一种用于将导电材料间歇地施加到半导体衬底(2)上的方法和装置,并且当这种导电材料未被施加到衬底(2)时也间歇地抛光衬底(2)。 此外,本发明提供一种使用新型阳极组件对导电材料进行平板/沉积和/或抛光并改善基板(2)上的电解质传质性能的方法和装置。

    METHOD FOR REMOVING A HARD MATERIAL LAYER DEPOSITED ON A HARD METAL WORK PIECE, AND A FIXING DEVICE FOR AT LEAST ONE WORK PIECE
    39.
    发明申请
    METHOD FOR REMOVING A HARD MATERIAL LAYER DEPOSITED ON A HARD METAL WORK PIECE, AND A FIXING DEVICE FOR AT LEAST ONE WORK PIECE 审中-公开
    程序剥离一个在硬质金属,工作中的HARTSTOFFTECHNIK层和支持的至少一条

    公开(公告)号:WO99054528A1

    公开(公告)日:1999-10-28

    申请号:PCT/CH1998/000152

    申请日:1998-04-21

    IPC分类号: C25F5/00 C25F7/00

    CPC分类号: C25F5/00 C25F7/00

    摘要: A hard material layer deposited on a hard metal work piece is removed by electrolytic passivation in which a maximum current density equal to at least 0.01 A/cm is generated on the work piece at the beginning of the layer removal process. In doing this, the hard material layer rapidly flakes off without causing substantial damage to the hard metal material located underneath.

    摘要翻译: 汽提施加于硬质金属工件硬涂层的层通过电解钝化,其中在Entschichtungsvorganges的开始处的电流密度最大值在其为至少0.01 A /厘米<2>工件创建制成。 这导致在所述硬质材料层的快速剥落,而基本上不影响基础碳化物材料。

    METHOD AND APPARATUS FOR POLISHING INNER SURFACE OF CYLINDRICAL PORTION OF ELONGATED CYLINDRICAL WORK AND ELONGATED CYLINDRICAL WORK
    40.
    发明申请
    METHOD AND APPARATUS FOR POLISHING INNER SURFACE OF CYLINDRICAL PORTION OF ELONGATED CYLINDRICAL WORK AND ELONGATED CYLINDRICAL WORK 审中-公开
    用于抛光圆柱滚子轴承内圆表面的方法和装置和延伸圆柱工作

    公开(公告)号:WO99024206A1

    公开(公告)日:1999-05-20

    申请号:PCT/JP1998/004494

    申请日:1998-10-05

    摘要: An electrolytic abrasive polishing machine for precisely polishing the inner surface of an elongated cylindrical work such as a metal pipe, comprising a holder (13) for disposing a cylindrical work (W) so that the axis of its cylindrical portion faces in the vertical direction, a rotary shaft (4) turnably supported in an outer peripheral pipe (3) so supported as to face downward in the vertical direction and capable of moving up and down, a tool electrode (5) equipped with a grinding wheel facing in a radial direction and fitted to the distal end of the rotary shaft (4) and a plastic pipe (6) wound around the periphery of the outer peripheral pipe (3) and capable of pressurizing. The inside of the plastic pipe (6) is pressurized at the time of polishing, expands in a gap between the outer peripheral pipe (3) and the inner surface of the cylindrical portion of the work (W) or between the outer peripheral pipe (3) and the inner surface of a free ring and suppresses the deflection of the outer peripheral pipe (3) and the deflection of the tool electrode (5) inside the cylindrical portion that would be caused by the high speed revolutions of the rotary shaft (4) and the tool electrode (5).

    摘要翻译: 一种用于精密抛光诸如金属管的细长圆柱形工件的内表面的电解研磨抛光机,包括用于设置圆柱形工件(W)的保持器(13),使得其圆柱形部分的轴线在垂直方向上面对, 旋转轴(4),其可旋转地支撑在外周管(3)中,所述外周管(3)被支撑成在垂直方向上向下并且能够上下移动;工具电极(5),其具有面向径向的砂轮 并且配合到旋转轴(4)的前端,以及缠绕在外周管(3)周围的能够加压的塑料管(6)。 塑料管(6)的内部在研磨时被加压,在外周管(3)与工件(W)的圆筒部的内表面之间的间隙或外周管( 3)和自由环的内表面,并且抑制外周管(3)的偏转和由旋转轴的高速旋转引起的圆筒部内的工具电极(5)的偏转( 4)和工具电极(5)。