摘要:
An integrated system for processing a plurality of wafers, having a conductive front surface, is provided. The system includes a plurality of processing subsystems for depositing on or removing metal from the front surfaces of the wafers. Each processing subsystem includes a process chamber and a cleaning chamber. The system also has a wafer handling subsystem for transporting each of the wafers into or out of the appropriate one of the plurality of processing subsystems. The plurality of processing subsystems and wafer handling subsystem form an integrated system.
摘要:
An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a platen, a conductive element disposed adjacent the platen and a polishing surface disposed adjacent the conductive element. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing surface while causing relative motion between the workpiece and the polishing surface. A voltage source is configured to effect an electric potential difference between the metallized surface on the workpiece and the conductive element so that an electric field is produced between the metallized surface and the conductive element. The apparatus further includes a solution application mechanism configured to supply an electrolytic solution to the polishing surface.
摘要:
In a method for processing a substrate (S), for instance by etching or plating, use is made of an apparatus comprising a chamber (1) for receiving the substrate (S), a unit (10) for feeding a processing fluid to the chamber (1) before and/or during processing, and a flushing unit (20) for cleaning the substrate (S) by means of a flushing fluid after completed processing. The flushing unit (20) comprises a flushing fluid tank (21), a cleaning device (20') and a fluid feeding means (22, 24), the fluid feeding means (22, 24) being arranged to feed from the flushing fluid tank (21) the flushing fluid through the chamber (1) for cleaning the substrate (S) received therein, through the cleaning device (20') for cleaning the flushing fluid and back to the flushing fluid tank (21). Thus, the working operations for cleaning the processed substrate (S) are significantly simplified. The cleaning can easily be automated without necessitating expensive auxiliary equipment. Moreover cleaning takes place in an essentially closed environment inside the chamber (1), thereby minimising the environment's exposure to substances which are dangerous to health. Moreover, an essentially closed process with a minimum of emissions of environmentally dangerous residual products, such as metal ions, is made possible.
摘要:
The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment of the invention, the pad or blade type objects are mounted on the cylindrical anodes and rotated about a first axis while the workpiece may be stationary or rotate about a second axis, and metal from the electrolyte solution is deposited on the workpiece when a potential difference is applied between the workpiece and the anode. In another embodiment of the present invention, the plating apparatus includes an anode plate spaced apart from the cathode workpiece. Upon application of power to the anode plate and the cathode workpiece, the electrolyte solution disposed in the plating apparatus is used to deposit the conductive material on the workpiece surface using cylindrical rollers having the pad or blade type objects.
摘要:
The invention relates to the electrolytic treatment of electrically conducting structures (4) which are insulated from each other and positioned on the surface of electrically insulating film material (Fo) whereby a method is employed wherein a material is discharged from a reservoir (15', 15'') and then transported from a conveyor belt through a treatment unit (1) and brought into contact with said treatment liquid (Fl). During transport, the material (Fo) is moved past at least one electrode device consisting of at least one cathode poled electrode (6) and at least one anode poled electrode (7). At least one cathode poled electrode (6) and at least one anode poled electrode (7) is brought into contact with a treatment liquid (Fl) and connected to an electrical/voltage source (8). A current then flows through the electrodes (6, 7) and said electrically conducting structures (4). The electrodes (6, 7) are shielded against each other in such a way that no electrical current can flow between the oppositely poled electrodes (6, 7). The material (Fo) is then loaded into a reservoir (15', 15'').
摘要:
The invention relates to a device and method for the partial electrochemical treatment of bars (10) in dipping bath installations. Said device and method aims to solve the problem that the bars (10) which are held in various positions by holding pliers during treatment should only be treated electrochemically in precisely defined central areas. To this end, the bars (10) are inserted into membrane supports (23), used to fix shielding diaphragms (8) for the bars (10) and into electrodes (30) and are electrochemically treated once they have reached a position for electroplating. In order for the bars (10) to reach said electroplating position, they are first inserted into the membrane supports (23) until they reach a defined adjusting position, whereby the membrane supports (23) are displaced into a locking position. The membrane supports (23) are subsequently fixed in said locking position and the bars (10) are then moved into the electroplating position.
摘要:
The invention relates to an electrochemical etching cell (1) for etching a body (15) which is to be etched and which is comprised, at least superficially, of a material to be etched. Said etching cell (1) comprises at least one chamber filled with an electrolyte and is provided with a first electrode (13), said first electrode being comprised, at least superficially, of a first electrode material, as well as with a second electrode (13') that is comprised, at least superficially, of a second electrode material. In addition, the body (15) to be etched is brought, at least in areas, into contact with the electrolyte. The first electrode material and the second electrode material are selected such that, after etching, the body (15) to be etched is not contaminated and/or the properties thereof are not impaired by the electrode materials. The electrode materials are, in particular, comprised of the same materials as those of the etching material. The invention also relates to a method for etching a body (15) to be etched while using said etching cell (1), whereby the first and/or second electrode (13, 13') is/are used as sacrificial electrodes. The inventive etching cell is especially suited for etching silicon wafers in a CMOS-compatible production line.
摘要:
The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate (2) and then polishes the same substrate (2). This is achieved by providing multiple chambers (100, 200) in a single apparatus, where one chamber (100) can be used for plating/depositing the conductive material and another chamber (200) can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electrochemical mechanical deposition and the polishing process can be performed using electropolishing or chemical mechanical polishing. The present invention further provides a method and apparatus for intermittently applying the conductive material to the semiconductor substrate (2) and also intermittently polishing the substrate (2) when such conductive material is not being applied to the substrate (2). Furthermore, the present invention provides a method and apparatus that plates/deposits and/or polishes a conductive material and improves the electrolyte mass transfer properties on a substrate (2) using a novel anode assembly.
摘要:
A hard material layer deposited on a hard metal work piece is removed by electrolytic passivation in which a maximum current density equal to at least 0.01 A/cm is generated on the work piece at the beginning of the layer removal process. In doing this, the hard material layer rapidly flakes off without causing substantial damage to the hard metal material located underneath.
摘要翻译:汽提施加于硬质金属工件硬涂层的层通过电解钝化,其中在Entschichtungsvorganges的开始处的电流密度最大值在其为至少0.01 A /厘米<2>工件创建制成。 这导致在所述硬质材料层的快速剥落,而基本上不影响基础碳化物材料。
摘要:
An electrolytic abrasive polishing machine for precisely polishing the inner surface of an elongated cylindrical work such as a metal pipe, comprising a holder (13) for disposing a cylindrical work (W) so that the axis of its cylindrical portion faces in the vertical direction, a rotary shaft (4) turnably supported in an outer peripheral pipe (3) so supported as to face downward in the vertical direction and capable of moving up and down, a tool electrode (5) equipped with a grinding wheel facing in a radial direction and fitted to the distal end of the rotary shaft (4) and a plastic pipe (6) wound around the periphery of the outer peripheral pipe (3) and capable of pressurizing. The inside of the plastic pipe (6) is pressurized at the time of polishing, expands in a gap between the outer peripheral pipe (3) and the inner surface of the cylindrical portion of the work (W) or between the outer peripheral pipe (3) and the inner surface of a free ring and suppresses the deflection of the outer peripheral pipe (3) and the deflection of the tool electrode (5) inside the cylindrical portion that would be caused by the high speed revolutions of the rotary shaft (4) and the tool electrode (5).