公开(公告)号：WO2009051379A2

公开(公告)日：2009-04-23

申请号：PCT/KR2008/006030

申请日：2008-10-14

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Do Young

Inventor： LEE, Do Young

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/37457

Abstract: Disclosed are a 4T-4S step & repeat unit pixel used in an image sensor and an image sensor having the same. The 4T-4S step & repeat unit pixel has four diffusion area patterns for photodiodes and three diffusion area patterns for an image signal conversion circuit. An aperture ratio of the image sensor increases in maximum by using four photodiodes arranged in a diagonal direction from each other and three diffusion area patterns arranged between the photodiodes near their edges.

Abstract translation: 公开了在图像传感器中使用的4T-4S步进重复单元像素和具有该4像素的步骤和重复单位像素。 4T-4S步进重复单元像素具有用于光电二极管的四个扩散区域图案和用于图像信号转换电路的三个扩散区域图案。 图像传感器的开口率通过使用沿彼此对角线方向布置的四个光电二极管和布置在其边缘附近的光电二极管之间的三个扩散区域图案来最大地增加。

公开(公告)号：WO2009020318A3

公开(公告)日：2009-04-16

申请号：PCT/KR2008004509

申请日：2008-08-04

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE DO YOUNG ,  KIM SHIN

Inventor： LEE DO YOUNG ,  KIM SHIN

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14643

Abstract: Provided is a unit pixel suppressing a dead zone and an afterimage. The unit pixel includes: one or more photodiodes generating image charges corresponding to a received image signal; and one or more transfer transistors for transferring the image charges to a floating diffusion area by performing switching operations in response to a transfer control signal, wherein portions of the one or more photodiode areas, which are close to gate terminals of the corresponding transfer transistors have higher concentration of impurity ions than the remaining portions, wherein an equipotential surface having the highest or lowest voltage level among equipotential surfaces is disposed at the portions of the photodiode areas close to the gate terminals of the transfer transistors, or wherein the portions of the photodiode areas close to the gate terminals of the transfer transistors have a depth deeper than the remaining portions of the photodiode.

Abstract translation: 提供抑制死区和残像的单位像素。 单位像素包括：一个或多个光电二极管，产生对应于接收到的图像信号的图像电荷; 以及用于通过响应于传送控制信号执行切换操作将图像电荷传送到浮动扩散区域的一个或多个转移晶体管，其中靠近相应的转移晶体管的栅极端子的一个或多个光电二极管区域的部分具有 杂质离子的浓度比剩余部分高，其中在等电位表面中具有最高或最低电压电平的等势面设置在靠近转移晶体管的栅极端子的光电二极管区域的部分处，或者其中光电二极管的部分 接近转移晶体管的栅极端子的区域的深度比光电二极管的其余部分深。

公开(公告)号：WO2009020316A3

公开(公告)日：2009-04-16

申请号：PCT/KR2008004507

申请日：2008-08-04

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE DO YOUNG

Inventor： LEE DO YOUNG

IPC: H01L27/146

CPC classification number: H01L27/14601 ,  H01L27/14643 ,  H01L27/14689

Abstract: Provided are a unit pixel for improving sensitivity in low illumination conditions and a method of manufacturing the unit pixel. The unit pixel includes: a photodiode generating image charges corresponding to an image signal; a transfer transistor transferring the image charges to a floating diffusion area; and a reset transistor having a terminal connected to the floating diffusion area and the other terminal applied with a power supply, wherein concentration of impurity ions implanted into the floating diffusion area is lower than concentration of impurity ions implanted into a diffusion area of the reset transistor applied with the power supply.

Abstract translation: 提供了用于在低照度条件下提高灵敏度的单位像素和制造单位像素的方法。 单位像素包括：光电二极管，产生对应于图像信号的图像电荷; 将图像电荷转移到浮动扩散区域的传输晶体管; 以及复位晶体管，其具有连接到所述浮动扩散区域的端子，并且施加有电源的另一端子，其中注入到所述浮动扩散区域中的杂质离子的浓度低于注入到所述复位晶体管的扩散区域中的杂质离子的浓度 应用电源。

公开(公告)号：WO2009020315A2

公开(公告)日：2009-02-12

申请号：PCT/KR2008004506

申请日：2008-08-04

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE DO YOUNG

Inventor： LEE DO YOUNG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14643

Abstract: Provided are a separation type unit pixel for preventing sensitivity reduction to prevent a depletion area from decreasing and a method of driving the unit pixel. The separation type unit pixel for preventing sensitivity reduction includes: a substrate; a photodiode constructed with a junction of a P-type diffusion area and an N-type diffusion area which are formed under a surface of the substrate in a vertical direction; a gate electrode conductor which is disposed on an upper portion of the surface of the substrate to be adjacent to the N-type or P-type diffusion area; a floating diffusion area formed to be adjacent to another surface of the gate electrode conductor; and a sensitivity reduction preventing conductor disposed on an upper portion of the photodiode area to cover the photodiode area.

Abstract translation: 提供了用于防止灵敏度降低以防止耗尽区域减小的分离型单元像素和驱动单位像素的方法。 用于防止灵敏度降低的分离型单位像素包括：基板; 由P型扩散区域和N型扩散区域的接合部构成的光电二极管，其形成在基板的表面的垂直方向上; 栅电极导体，其设置在与所述N型或P型扩散区相邻的所述衬底的表面的上部; 形成为与栅电极导体的另一表面相邻的浮动扩散区域; 以及设置在光电二极管区域的上部以覆盖光电二极管区域的灵敏度降低防止导体。

公开(公告)号：WO2009001988A1

公开(公告)日：2008-12-31

申请号：PCT/KR2007/005147

申请日：2007-10-19

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su ,  LEE, Do Young

Inventor： LEE, Byoung Su ,  LEE, Do Young

IPC: G01N33/533

CPC classification number: G01N21/6454 ,  B01L3/5085 ,  B01L2300/0654 ,  B01L2300/0829

Abstract: A diagnosis device using an image sensor and a method of manufacturing the same are provided. The diagnosis device using the image sensor includes: a substrate in which an image sensor including a plurality of optical sensors is formed; an insulation layer formed on the substrate; and a plurality of wells formed in the insulation layer in correspondence with the plurality of optical sensors, the plurality of wells into which reference samples for biochemical reactions with a target sample are inserted.

Abstract translation: 提供了使用图像传感器的诊断装置及其制造方法。 使用图像传感器的诊断装置包括：形成有包括多个光学传感器的图像传感器的基板; 形成在所述基板上的绝缘层; 以及与所述多个光学传感器对应地形成在所述绝缘层中的多个阱，所述多个孔插入其中插入用于与目标样品进行生物化学反应的参考样品。

公开(公告)号：WO2008117956A1

公开(公告)日：2008-10-02

申请号：PCT/KR2008/001581

申请日：2008-03-21

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Do Young

Inventor： LEE, Do Young

IPC: H04N5/335

CPC classification number: H04N5/37457 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14641

Abstract: A chip-stacked image sensor obtained by embodying an image sensor cell in two chips and combining the chips with each other is provided. The chip-stacked image sensor includes first and second semiconductor chips. The first semiconductor chip includes a plurality of image signal sensing cells for generating image charges corresponding to image signals sensed by at least four photodiodes and outputting the generated image charges through at least two common terminals and a plurality of image charge transmission pads. The second semiconductor chip includes a plurality of image signal conversion cells for converting the image signals into electrical signals and a plurality of image charge receiving pads. Here, the image charges generated by the image signal sensing cells are transmitted to corresponding image signal conversion cells via the plurality of image charge transmission pads and the plurality of image charge receiving pads.

Abstract translation: 提供了通过将图像传感器单元置于两个芯片中并将芯片彼此组合而获得的芯片堆叠图像传感器。 芯片堆叠图像传感器包括第一和第二半导体芯片。 第一半导体芯片包括多个图像信号感测单元，用于产生对应于由至少四个光电二极管感测的图像信号的图像电荷，并且通过至少两个公共端子和多个图像电荷传输垫输出产生的图像电荷。 第二半导体芯片包括用于将图像信号转换为电信号的多个图像信号转换单元和多个图像电荷接收垫。 这里，由图像信号感测单元产生的图像电荷经由多个图像电荷传输垫和多个图像电荷接收垫被发送到相应的图像信号转换单元。

公开(公告)号：WO2008075874A1

公开(公告)日：2008-06-26

申请号：PCT/KR2007/006622

申请日：2007-12-18

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Do Young

Inventor： LEE, Do Young

IPC: H04N5/335

CPC classification number: H04N9/045 ,  H01L27/14641 ,  H04N5/37457

Abstract: A 3T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including three transistors and a 3T-4S image sensor including the 3T-4S step & repeat unit cell are provided. The 3T-4S step & repeat unit cell includes first to fourth photodiodes. A first shared image sensor unit cell is obtained by combining the first and second photodiodes with four transistors. A second shared image sensor unit cell is obtained by combining the third and fourth photodiodes with four transistors. Signals corresponding to images incident onto the first and second photodiodes are output through a first common detection line. Signals corresponding to images incident onto the third and fourth photodiodes are output through a second common detection line. A terminal of each of the four photodiodes is connected to a first voltage source. Conversion voltages corresponding to image signals incident onto two photodiodes via green filters are output through a common detection line. Conversion voltages corresponding to image signals incident onto the other two photodiodes via red and blue filters are output through another common detection line.

Abstract translation: 提供了通过组合包括三个晶体管的四个图像传感器单元电池和包括3T-4S步骤和重复单元的3T-4S图像传感器获得的3T-4S步进和重复单位单元。 3T-4S步进重复单元包括第一至第四光电二极管。 通过将第一和第二光电二极管与四个晶体管组合来获得第一共享图像传感器单元。 通过将第三和第四光电二极管与四个晶体管组合来获得第二共享图像传感器单元。 通过第一公共检测线输出与入射到第一和第二光电二极管上的图像相对应的信号。 通过第二共同检测线输出与入射到第三和第四光电二极管上的图像相对应的信号。 四个光电二极管中的每一个的端子连接到第一电压源。 通过公共检测线输出对应于通过绿色滤波器入射到两个光电二极管上的图像信号的转换电压。 经由红色和蓝色滤色器入射到另外两个光电二极管上的对应于图像信号的转换电压通过另一个公共检测线输出。

公开(公告)号：WO2008075846A1

公开(公告)日：2008-06-26

申请号：PCT/KR2007/006335

申请日：2007-12-07

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Do Young

Inventor： LEE, Do Young

IPC: H04N5/335

CPC classification number: H04N9/045 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H04N5/335 ,  H04N5/3741 ,  Y10T428/24479 ,  Y10T428/24802

Abstract: A 4T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including four transistors and a 4T-4S image sensor including the 4T-4S step & repeat unit cell are provided. The 4T-4S step & repeat unit cell includes first and second shared image sensor unit cells. The first shared image sensor unit cell includes first and third photodiodes and five transistors. The second shared image sensor unit cell includes second and fourth photodiodes and five transistors. The second photodiode is disposed over the first photodiode. The third photodiode is disposed at a side of the second photodiode. A terminal of each of the fourth photodiode is connected to a first voltage source. Signals corresponding to images incident onto the first and third photodiodes are output through a first common detection line OUT1. Signals corresponding to images incident onto the second and fourth photodiodes are output through a second common detection line OUT2.

Abstract translation: 提供了通过组合包括四个晶体管的四个图像传感器单元电池和包括4T-4S步骤和重复单元的4T-4S图像传感器而获得的4T-4S步进和重复单位单元。 4T-4S步进重复单元包括第一和第二共享图像传感器单元。 第一共享图像传感器单元包括第一和第三光电二极管和五个晶体管。 第二共享图像传感器单元包括第二和第四光电二极管和五个晶体管。 第二光电二极管设置在第一光电二极管的上方。 第三光电二极管设置在第二光电二极管的一侧。 第四光电二极管中的每一个的端子连接到第一电压源。 通过第一公共检测线OUT1输出与入射到第一和第三光电二极管上的图像相对应的信号。 通过第二公共检测线OUT2输出与入射到第二和第四光电二极管上的图像相对应的信号。

公开(公告)号：WO2008069606A1

公开(公告)日：2008-06-12

申请号：PCT/KR2007/006334

申请日：2007-12-07

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L21/3205

CPC classification number: H01L27/0688 ,  H01L21/8221

Abstract: Provided are a method of manufacturing an integrated circuit having a stacked structure by forming a crystalline semiconductor thin film on a crystalline or amorphous substrate and the integrated circuit. Accordingly, the method of manufacturing the integrated circuit having the stacked structure uses a method of growing a crystalline semiconductor thin film on a polycrystalline or amorphous substrate, so that the method can be easily performed at low costs, and high-speed processing and high-density integration can be achieved.

Abstract translation: 提供一种通过在晶体或非晶衬底和集成电路上形成晶体半导体薄膜来制造具有堆叠结构的集成电路的方法。 因此，具有层叠结构的集成电路的制造方法使用在多晶或非晶基板上生长结晶半导体薄膜的方法，从而可以容易地以低成本执行该方法，并且高速处理和高速处理， 可以实现密度整合。

公开(公告)号：WO2007105905A1

公开(公告)日：2007-09-20

申请号：PCT/KR2007/001241

申请日：2007-03-14

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Do Young

Inventor： LEE, Do Young

IPC: H01L27/146

CPC classification number: H01L27/14603

Abstract: Provided is a pixel array structure and of a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of arranging the same in which unit pixels are arranged diagonally to adjacent unit pixels in a row and column direction. For the arrangement, a pixel array in even rows is shifted to a half of a pitch in a column direction with respect to a pixel array in odd rows. Accordingly, in a pixel array implemented in a diagonal pattern, a distance between optical sensing elements can be larger, so that optical sensing elements with larger regions can be obtained. In addition, pixel transistor circuit units constructed with MOS transistors can be arranged between the optical sensing elements, so that a photo sensitivity and a resolution can be markedly increased.

Abstract translation: 提供了一种像素阵列结构和互补金属氧化物半导体（CMOS）图像传感器及其排列方法，其中单位像素沿着行和列方向与相邻单位像素对角布置。 对于这种布置，偶数行中的像素阵列相对于奇数行中的像素阵列在列方向上偏移到间距的一半。 因此，在以对角线图案实现的像素阵列中，光学感测元件之间的距离可以更大，使得可以获得具有较大区域的光学感测元件。 此外，由MOS晶体管构成的像素晶体管电路单元可以布置在光学感测元件之间，使得光敏度和分辨率可以显着增加。