公开(公告)号：WO2011145813A3

公开(公告)日：2012-02-23

申请号：PCT/KR2011003108

申请日：2011-04-27

Applicant: SILICONFILE TECHNOLOGIES INC ,  JEON IN GYUN ,  AHN HEUI GYUN ,  WON JUN HO ,  OH SE JUNG

Inventor： JEON IN GYUN ,  AHN HEUI GYUN ,  WON JUN HO ,  OH SE JUNG

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14636 ,  H01L27/1469

Abstract: The present invention relates to an image sensor having a three-dimensional (3D) structure and to a method for manufacturing same. According to the image sensor having a 3D structure and the method for manufacturing same of the present invention, by making the size of a bonding pad of a first wafer different from the size of a bonding pad of a second wafer, a process margin can be produced in bonding the first and second wafers, and a constant contact resistance can be maintained by making an inter-pixel contact area uniform.

Abstract translation: 本发明涉及具有三维（3D）结构的图像传感器及其制造方法。 根据具有3D结构的图像传感器及其制造方法，通过使第一晶片的接合焊盘的尺寸不同于第二晶片的接合焊盘的尺寸，工艺余量可以为 在接合第一和第二晶片时产生，并且可以通过使像素间接触区域均匀而保持恒定的接触电阻。

公开(公告)号：WO2011115369A3

公开(公告)日：2011-12-15

申请号：PCT/KR2011000996

申请日：2011-02-16

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE BYOUNG SU

Inventor： LEE BYOUNG SU

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689

Abstract: According to the present invention, a backlight infrared image sensor comprises: a bulk silicon layer formed with bulk silicon; an epi-silicon layer which is formed with epitaxial silicon including a plurality of photo diodes on the lower surface of the bulk silicon layer; and a wiring formation layer configured to form oxide and metal layers on the lower surface of the epi-silicon layer, wherein the thickness (tbulk) of the bulk silicon layer is adjusted to pass light in a specific band.

Abstract translation: 根据本发明，背光红外图像传感器包括：由体硅形成的体硅层; 在体硅层的下表面上形成有包括多个光电二极管的外延硅的外延硅层; 以及配线形成层，被配置为在外延硅层的下表面上形成氧化物层和金属层，其中调节体硅层的厚度（tbulk）以使特定带中的光通过。

公开(公告)号：WO2010050751A3

公开(公告)日：2010-09-02

申请号：PCT/KR2009006274

申请日：2009-10-29

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE BYOUNG-SU

Inventor： LEE BYOUNG-SU

IPC: H04N5/225 ,  H04N5/335

CPC classification number: H04N5/23212 ,  H04N5/33 ,  H04N2101/00

Abstract: An image sensor capable of realizing night-photographing and functions of a proximity sensor and an illuminance sensor. The image sensor includes a light source for emitting light toward a subject; a light source control section for controlling current applied to the light source; an illuminance sensor section for sensing an illuminance of surrounding environment; and a sensor section having an image sensor unit for sensing an image signal.

Abstract translation: 能够实现夜景拍摄的图像传感器以及接近传感器和照度传感器的功能。 图像传感器包括用于朝向被摄体发光的光源; 用于控制施加到光源的电流的光源控制部分; 照度传感器部，用于感测周围环境的照度; 以及具有用于感测图像信号的图像传感器单元的传感器部分。

公开(公告)号：WO2010050751A2

公开(公告)日：2010-05-06

申请号：PCT/KR2009/006274

申请日：2009-10-29

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung-Su

Inventor： LEE, Byoung-Su

IPC: H04N5/225 ,  H04N5/335

CPC classification number: H04N5/23212 ,  H04N5/33 ,  H04N2101/00

Abstract: An image sensor capable of realizing night-photographing and functions of a proximity sensor and an illuminance sensor. The image sensor includes a light source for emitting light toward a subject; a light source control section for controlling current applied to the light source; an illuminance sensor section for sensing an illuminance of surrounding environment; and a sensor section having an image sensor unit for sensing an image signal.

Abstract translation:

一种能够实现夜间拍摄的图像传感器以及接近传感器和照度传感器的功能。 图像传感器包括用于朝着对象发射光的光源; 光源控制部分，用于控制施加到光源的电流; 照度传感器部分，用于感测周围环境的照度; 以及具有用于感测图像信号的图像传感器单元的传感器部分。

公开(公告)号：WO2009051363A3

公开(公告)日：2009-07-16

申请号：PCT/KR2008005862

申请日：2008-10-07

Applicant: SILICONFILE TECHNOLOGIES INC ,  LEE BYOUNG SU

Inventor： LEE BYOUNG SU

IPC: H04N5/335

CPC classification number: H04N9/045 ,  H04N5/33

Abstract: Provided is a one-chip vitality measuring image sensor. The image sensor includes one chip where a plurality of IR pixels and a plurality of visible pixels are alternately disposed, IR pass filters which are disposed on the IR pixels, and color pass filters which are disposed on the visible pixels. In the image sensor, IR strength and color strengths are obtained from light which is incident to the IR pixels and the visible pixels, and a vitality of a subject is measured by comparing the IR strength with the color strengths.

Abstract translation: 提供了一种单芯片活力测量图像传感器。 图像传感器包括交替设置多个IR像素和多个可见像素的一个芯片，设置在IR像素上的IR通过滤光器和设置在可见像素上的彩色滤光片。 在图像传感器中，通过入射到IR像素和可见像素的光获得IR强度和颜色强度，并且通过将IR强度与色强进行比较来测量被摄体的活力。

公开(公告)号：WO2009066909A3

公开(公告)日：2009-05-28

申请号：PCT/KR2008/006751

申请日：2008-11-17

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H04N5/335

Abstract: Provided is a unit pixel of an image sensor in which photodiodes are arranged in a stacking structure and transfer gates are provided for the respective photodiodes so that signals are sequentially transferred to extract information on a plurality of color components and, by which dark current generated at a substrate surface can be reduced by using a buried-type photodiode. Accordingly, since a buried-type photodiode is used in a unit pixel of an image sensor including a photodiode having a stacking structure, dark current generated by surface detect can be suppressed. In addition, since signals are sequentially transferred through transfer gates for respective photodiodes having a stacking structure, information on a plurality of color components can be extracted without having to use complex peripheral circuits.

公开(公告)号：WO2009066896A1

公开(公告)日：2009-05-28

申请号：PCT/KR2008/006624

申请日：2008-11-10

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: G01N33/533 ,  H01L31/10 ,  H01L27/146 ,  G01N33/50

CPC classification number: H01L27/14625 ,  G01N21/6454 ,  G01N2021/6471 ,  H01L27/14621 ,  H01L27/14627

Abstract: Disclosed is a fluorescent biochip diagnosis device including: an image sensor having a plurality of photo-detectors; and a band-pass filter unit having a plurality of band-pass filters formed on a plurality of the photo-detectors, wherein a plurality of the band-pass filters are implemented by forming a nanostructure pattern in a metal layer. Since the fluorescent biochip diagnosis device has little optical loss due to a short interval between the biochip and the photo-detector, excellent sensitivity can be provided. Also, since signals can be simultaneously measured by combining light beams having a short wavelength used as an illumination depending on a type of a fluorescent protein material, cost of the diagnosis device and a diagnosis time can be reduced.

Abstract translation: 公开了一种荧光生物芯片诊断装置，包括：具有多个光检测器的图像传感器; 以及具有形成在多个光检测器上的多个带通滤波器的带通滤波器单元，其中通过在金属层中形成纳米结构图案来实现多个带通滤波器。 由于荧光生物芯片诊断装置由于生物芯片和光电检测器之间的间隔小而具有很小的光学损失，因此可以提供极好的灵敏度。 此外，由于可以根据荧光蛋白质材料的种类组合用作照明的短波长的光束同时测量信号，所以可以降低诊断装置的成本和诊断时间。

公开(公告)号：WO2008156274A1

公开(公告)日：2008-12-24

申请号：PCT/KR2008/003400

申请日：2008-06-17

Applicant: SILICONFILE TECHNOLOGIES INC. ,  RIM, Jae Young ,  OH, Se Jung

Inventor： RIM, Jae Young ,  OH, Se Jung

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469

Abstract: The present invention provides a pixel array having a three-dimensional structure and an image sensor having the pixel array. The pixel array has a three-dimensional structure in which a photodiode, a transfer transistor, a reset transistor, a convert transistor, and a select transistor are divided and formed on a first wafer and a second wafer, chips on the first and second wafers are connected in a vertical direction after die-sorting the chips. The first wafer includes a plurality of photodiodes for generating electric charges corresponding to an incident video signal, a plurality of transfer transistors for transferring the electric charges generated by the photodiodes to floating diffusion regions, a plurality of STIs circling one of the photodiodes and one transfer transistor connected to the one photodiode, a first super-contact which extends from a lower portion of the plurality of the STIs to a lower surface of the wafer, and a second super-contact which penetrates the plurality of the STIs and a portion of the first super-contact. The electric charges accumulated in the floating diffusion regions are transferred to the second wafer through the second super-contact.

Abstract translation: 本发明提供具有三维结构的像素阵列和具有像素阵列的图像传感器。 像素阵列具有三维结构，其中光电二极管，传输晶体管，复位晶体管，转换晶体管和选择晶体管被分割并形成在第一晶片和第二晶片上，在第一和第二晶片上的芯片 在对芯片进行芯片分选之后沿垂直方向连接。 第一晶片包括用于产生对应于入射视频信号的电荷的多个光电二极管，用于将由光电二极管产生的电荷转移到浮动扩散区域的多个转移晶体管，围绕光电二极管之一的一个转移 晶体管连接到一个光电二极管，从多个STI的下部延伸到晶片的下表面的第一超级接触件，以及穿过多个STI的第二超级接触件和一部分 第一超级联系。 通过第二超级接触将积聚在浮动扩散区域中的电荷转移到第二晶片。

公开(公告)号：WO2008150139A1

公开(公告)日：2008-12-11

申请号：PCT/KR2008/003191

申请日：2008-06-09

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/14

CPC classification number: H01L27/14667 ,  H01L27/14627

Abstract: Provided is a stacked image sensor. Particularly, provided are a stacked image sensor including a photosensitive element portion having a photo-conductive thin film on an upper portion of a wafer where a peripheral circuit is formed and a method of manufacturing the stacked image sensor. In the stacked image sensor according to the present invention, since a wafer where a circuit is formed and a photosensitive element portion are formed in a stacked structure, a whole size of the image sensor can be reduced, and there is no optical crosstalk due to absorption of incident light to adjacent pixels. In addition, since a photo-conductive element having a high light absorbance is used, a high photo-electric conversion efficiency can be obtained. In addition, in the method of manufacturing a stacked image sensor according to the present invention, since the upper photosensitive element can be formed by using a simple low-temperature process, a production cost can be reduced.

Abstract translation: 提供了一种堆叠图像传感器。 特别地，提供了一种堆叠图像传感器，其包括在形成外围电路的晶片的上部上具有光导薄膜的感光元件部分和制造叠层图像传感器的方法。 在根据本发明的堆叠式图像传感器中，由于形成了电路的晶片和形成有层叠结构的感光元件部分，所以能够减小图像传感器的整体尺寸，并且由于 将入射光吸收到相邻像素。 此外，由于使用具有高吸光度的光导体元件，因此可以获得高的光电转换效率。 此外，在根据本发明的层叠图像传感器的制造方法中，由于可以通过使用简单的低温处理来形成上部感光元件，所以可以降低制造成本。

公开(公告)号：WO2008136634A1

公开(公告)日：2008-11-13

申请号：PCT/KR2008/002547

申请日：2008-05-07

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/148

Abstract: The present invention relates to a unit pixel of an image sensor having a large area photodiode with high sensitivity, and more particularly, to a unit pixel of an image sensor having a high sensitivity photodiode which includes a plurality of transfer gates on the photodiode having a large area to effectively transfer photocharges generated at the photodiode to a floating diffusion region.

Abstract translation: 本发明涉及具有高灵敏度的大面积光电二极管的图像传感器的单位像素，更具体地，涉及具有高灵敏度光电二极管的图像传感器的单位像素，该灵敏度光电二极管在光电二极管上包括多个传输门， 大面积以有效地将在光电二极管处产生的光电荷转移到浮动扩散区域。