COMPENSATION FOR DISTORTION IN CONTACT LITHOGRAPHY
    73.
    发明申请
    COMPENSATION FOR DISTORTION IN CONTACT LITHOGRAPHY 审中-公开
    补偿联系人LITHOGRAPHY的失败

    公开(公告)号:WO2008013778A3

    公开(公告)日:2008-05-08

    申请号:PCT/US2007016580

    申请日:2007-07-24

    CPC classification number: G03F7/0002 B82Y10/00 B82Y40/00

    Abstract: A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold (110) to a substrate (130) during a contact lithography process: and modifying the mold (110) to compensate for the distortions. A contact lithography system includes a design subsystem (210) configured to generate data describing a lithography pattern: an analysis subsystem (220) configured to identify one or more distortions likely to occur when using a mold (110) created from the data; and a mold modification subsystem (230) configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem (220).

    Abstract translation: 接触光刻的方法包括预测在接触光刻过程期间将图案从模具(110)转移到衬底(130)时可能发生的变形;以及修改模具(110)以补偿变形。 接触光刻系统包括设计子系统(210),其被配置为生成描述光刻图案的数据:分析子系统(220),其被配置为识别当使用由所述数据创建的模具(110)时可能发生的一个或多个失真; 以及模具修改子系统(230),其被配置为修改所述数据以补偿由所述分析子系统(220)识别的所述一个或多个失真。

    ALIGNMENT FOR CONTACT LITHOGRAPHY
    74.
    发明申请
    ALIGNMENT FOR CONTACT LITHOGRAPHY 审中-公开
    联系方式对齐

    公开(公告)号:WO2008013798A3

    公开(公告)日:2008-03-20

    申请号:PCT/US2007016621

    申请日:2007-07-24

    Abstract: A contact lithography system includes a patterning tool (110) having a pattern for transfer to a substrate (130); and at least one alignment device (140) coupled to the patterning tool (110). The alignment device (140) is configured to measure alignment between the patterning tool (110) and a substrate (130) for receiving the pattern of the patterning tool (110). A contact lithograpny method includes aligning a patterning tool (110) having a pattern for transfer with a substrate (130) for receiving the pattern of the patterning tool (110) using at least one alignment device (140) coupled to the patterning tool (110).

    Abstract translation: 接触光刻系统包括具有用于转移到衬底(130)的图案的图案形成工具(110); 以及耦合到图案形成工具(110)的至少一个对准装置(140)。 对准装置(140)被配置为测量图案形成工具(110)和用于接收图案形成工具(110)的图案的基底(130)之间的对准。 接触光刻方法包括使具有用于转移的图案的图案形成工具(110)与衬底(130)对准,用于使用联接到图案形成工具(110)的至少一个对准装置(140)接收图案形成工具(110)的图案 )。

    COMPENSATION FOR DISTORTION IN CONTACT LITHOGRAPHY
    75.
    发明申请
    COMPENSATION FOR DISTORTION IN CONTACT LITHOGRAPHY 审中-公开
    补偿接触光刻中的失真

    公开(公告)号:WO2008013778A2

    公开(公告)日:2008-01-31

    申请号:PCT/US2007/016580

    申请日:2007-07-24

    CPC classification number: G03F7/0002 B82Y10/00 B82Y40/00

    Abstract: A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold (110) to a substrate (130) during a contact lithography process: and modifying the mold (110) to compensate for the distortions. A contact lithography system includes a design subsystem (210) configured to generate data describing a lithography pattern: an analysis subsystem (220) configured to identify one or more distortions likely to occur when using a mold (110) created from the data; and a mold modification subsystem (230) configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem (220).

    Abstract translation: 接触光刻的方法包括预测在接触光刻过程中将图案从模具(110)转印到基板(130)时可能发生的扭曲:以及修改模具(110)以补偿 为扭曲。 一种接触光刻系统包括被配置为产生描述光刻图案的数据的设计子系统(210):分析子系统(220),其被配置为识别在使用从数据创建的模具(110)时可能发生的一个或多个失真; 和模具修改子系统(230),其被配置为修改数据以补偿由分析子系统(220)识别的一个或多个失真。

    MONOLITHIC SYSTEM AND METHOD FOR ENHANCED RAMAN SPECTROSCOPY
    77.
    发明申请
    MONOLITHIC SYSTEM AND METHOD FOR ENHANCED RAMAN SPECTROSCOPY 审中-公开
    用于增强拉曼光谱的单体系统和方法

    公开(公告)号:WO2006081565A1

    公开(公告)日:2006-08-03

    申请号:PCT/US2006/003264

    申请日:2006-01-26

    CPC classification number: G01N21/658 G01N2201/0873

    Abstract: Devices, systems, and methods for enhancing Raman spectroscopy and hyper-Raman are disclosed. A molecular analysis device (100', 100") for performing Raman spectroscopy comprises a substrate (110) and a laser source (120) disposed on the substrate (110). The laser source (120) may be configured for generating a laser radiation (125), which may irradiate an analyte (31 ) disposed on a Raman enhancement structure (300). The Raman enhancement structure (300) may be disposed in a waveguide (130). The molecular analysis device (100', 100") also includes a wavelength demultiplexer (240) and radiation sensors (290) disposed on the substrate (110) and configured for receiving a Raman scattered radiation (160), which may be generated by the irradiation of the analyte (310) and Raman enhancement structure (300).

    Abstract translation: 公开了用于增强拉曼光谱和超拉曼的装置,系统和方法。 用于进行拉曼光谱分析的分子分析装置(100',100“)包括基板(110)和设置在基板(110)上的激光源(120),激光源(120)可以被配置为产生激光辐射 (125),其可以照射设置在拉曼增强结构(300)上的分析物(31),拉曼增强结构(300)可以设置在波导管(130)中,分子分析装置(100',100“) 还包括布置在衬底(110)上并被配置用于接收拉曼散射辐射(160)的波长解复用器(240)和辐射传感器(290),其可以通过分析物(310)的照射和拉曼增强结构 (300)。

Patent Agency Ranking