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    PLASMONIC HIGH-SPEED DEVICES FOR ENHANCING THE PERFORMANCE OF MICROELECTRONIC DEVICES
    2.
    发明申请
    PLASMONIC HIGH-SPEED DEVICES FOR ENHANCING THE PERFORMANCE OF MICROELECTRONIC DEVICES 审中-公开
    用于增强微电子器件性能的PLASMONIC高速器件

    公开(公告)号：WO2009051732A1

    公开(公告)日：2009-04-23

    申请号：PCT/US2008/011783

    申请日：2008-10-15

    申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  WILLIAMS, Stanley, R. ,  FATTAL, David

    发明人： WILLIAMS, Stanley, R. ,  FATTAL, David

    IPC分类号： G02B6/10

    CPC分类号： G02B6/1226 ,  B82Y20/00 ,  G02B6/107 ,  G02B6/34

    摘要： Various embodiments of the present invention are directed to photonic devices that can be used to collect and convert incident ER into surface plasmons that can be used to enhance the operation of microelectronic devices. In one embodiment of the present invention, a photonic device (100) comprises a dielectric layer (104) having a top surface and a bottom surface, and a planar nanowire network (106) covering at least a portion of the top surface of the dielectric layer. The bottom surface of the dielectric layer is positioned on the top surface of a substrate (102), and the planar nanowire network is configured to convert incident electromagnetic radiation into surface plasmons that penetrate through the dielectric layer and into at least a portion of the substrate.

    摘要翻译： 本发明的各种实施例涉及可用于收集并将入射的ER转换成可用于增强微电子器件的操作的表面等离子体激元的光子器件。 在本发明的一个实施例中，光子器件（100）包括具有顶表面和底表面的介电层（104）和覆盖电介质顶表面的至少一部分的平面纳米线网络（106） 层。 电介质层的底表面位于衬底（102）的顶表面上，并且平面纳米线网络被配置为将入射的电磁辐射转换成穿透电介质层并进入衬底的至少一部分的表面等离子体 。

    MULTIPLEXER INTERFACE TO A NANOSCALE-CROSSBAR
    4.
    发明申请
    MULTIPLEXER INTERFACE TO A NANOSCALE-CROSSBAR 审中-公开
    多功能接口到纳斯卡尔 - 交叉杆

    公开(公告)号：WO2006115980A1

    公开(公告)日：2006-11-02

    申请号：PCT/US2006/014888

    申请日：2006-04-19

    申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. ,  KUEKES, Phillip, J. ,  WILLIAMS, Stanley, R.

    发明人： KUEKES, Phillip, J. ,  WILLIAMS, Stanley, R.

    IPC分类号： G11C13/02

    CPC分类号： G11C8/10 ,  B82Y10/00 ,  G11C13/0023 ,  G11C13/02 ,  G11C2213/77 ,  G11C2213/81 ,  Y10S977/938

    摘要： Various embodiments of the present invention are directed to electronic means for reading the content of a nanowire-crossbar memory. In one embodiment of the present invention, a microscale or sub-microscale signal line (402) is interconnected with one set of parallel nanowires (310-315) emanating from a nanowire-crossbar memory by configurable, nanowire-junction switches (404). The microscale or sub-microscale signal line (402) serves as a single-wire multiplexer, allowing the contents of any particular single-bit atorage element (316) within the nanowire-crossbar memory to be read.

    摘要翻译： 本发明的各种实施例涉及用于读取纳米线交叉存储器的内容的电子装置。 在本发明的一个实施例中，微米级或亚微米级信号线（402）与通过可配置的纳米线结开关（404）从纳米线交叉存储器发出的一组平行纳米线（310-315）互连。 微尺度或亚微米信号线（402）用作单线多路复用器，允许读取纳米线交叉存储器内的任何特定单位位元件（316）的内容。

    DETERMINATION OF A SENSOR DEVICE LOCATION IN A SENSOR NETWORK
    8.
    发明申请
    DETERMINATION OF A SENSOR DEVICE LOCATION IN A SENSOR NETWORK 审中-公开
    传感器网络中传感器设备位置的确定

    公开(公告)号：WO2011136816A1

    公开(公告)日：2011-11-03

    申请号：PCT/US2010/033294

    申请日：2010-04-30

    申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  WILLIAMS, Stanley, R. ,  FIORENTINO, Marco

    发明人： WILLIAMS, Stanley, R. ,  FIORENTINO, Marco

    IPC分类号： G01B11/00 ,  G01D21/02

    CPC分类号： G01C15/002 ,  G01S17/87 ,  Y04S20/48

    摘要： Determination of a sensor device location in a sensor network is described. A system can include rotating optical beams (270) having a known location. Detectors (210) can be located with each of the rotating optical beams. The system can include a sensor device (280) placeable as part of the sensor network. A reflector (125, 285) can be near the sensor device and can reflect at least two optical beams back to the detectors associated with each of the respective optical beams. A triangulation module (235) can triangulate a position of the reflector, and thus the sensor, based on the reflected optical beams.

    摘要翻译： 描述传感器网络中传感器设备位置的确定。 系统可以包括具有已知位置的旋转光束（270）。 检测器（210）可以与每个旋转光束一起定位。 该系统可以包括作为传感器网络的一部分放置的传感器装置（280）。 反射器（125,285）可以靠近传感器装置并且可以将至少两个光束反射回到与每个相应光束相关联的检测器。 三角测量模块（235）可以基于反射的光束三角测量反射器的位置，从而对传感器进行三角测量。

    THREE DIMENSIONAL MULTILAYER CIRCUIT
    10.
    发明申请
    THREE DIMENSIONAL MULTILAYER CIRCUIT 审中-公开
    三维多层电路

    公开(公告)号：WO2011093863A1

    公开(公告)日：2011-08-04

    申请号：PCT/US2010/022489

    申请日：2010-01-29

    申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  WU, Wei ,  WILLIAMS, Stanley, R.

    发明人： WU, Wei ,  WILLIAMS, Stanley, R.

    IPC分类号： H01L29/76 ,  H01L29/40

    CPC分类号： H01L27/101 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/24

    摘要： A three dimensional multilayer circuit (600) includes a plurality of crossbar arrays (512) made up of intersecting crossbar segments (410, 420) and programmable crosspoint devices (514) interposed between the intersecting crossbar segments (410, 420). Shift pins (505, 510) are used to shift connection domains (430) of the intersecting crossbar segments (410, 420) between stacked crossbar arrays (512) such that the programmable crosspoint devices (514) are uniquely addressed. The shift pins (505, 510) make electrical connections between crossbar arrays (512) by passing vertically between crossbar segments (410, 510) in the first crossbar array (512) and crossbar segments in a second crossbar array. A method for transforming multilayer circuits is also described.

    摘要翻译： 三维多层电路（600）包括由相交的横杆段（410,420）和插入在相交的横杆段（410,420）之间的可编程交叉点装置（514）组成的多个横杆阵列（512）。 移位销（505,510）用于使堆叠的横杆阵列（512）之间的交叉横截面段（410,420）的连接区域（430）移位，使得可编程交叉点设备（514）被唯一地寻址。 换档销（505,510）通过在第一交叉杆阵列（512）中的横杆段（410,510）和第二横杆阵列中的横杆段之间垂直地穿过横杆阵列（512）之间进行电连接。 还描述了用于转换多层电路的方法。