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    LIGHT-EMITTING DIODE INCLUDING A METAL-DIELECTRIC-METAL STRUCTURE
    1.
    发明申请
    LIGHT-EMITTING DIODE INCLUDING A METAL-DIELECTRIC-METAL STRUCTURE 审中-公开
    发光二极管，包括金属 - 电介质金属结构

    公开(公告)号：WO2011034541A1

    公开(公告)日：2011-03-24

    申请号：PCT/US2009/057545

    申请日：2009-09-18

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  LI, Jingjing ,  FATTAL, David A. ,  THYLEN, Lars Helge ,  TAN, Michael Renne Ty ,  WANG, Shih-Yuan

    Inventor： LI, Jingjing ,  FATTAL, David A. ,  THYLEN, Lars Helge ,  TAN, Michael Renne Ty ,  WANG, Shih-Yuan

    IPC: H01L33/24

    CPC classification number: H01L33/0012 ,  B82Y20/00 ,  H01L27/15 ,  H01L33/06 ,  H01L33/34 ,  H01L33/40

    Abstract: A light-emitting diode (LED) (101). The LED (101) includes a plurality of portions including a p-doped portion (112), an intrinsic portion (114), and a n-doped portion (116). The intrinsic portion (114) is disposed between the p-doped portion (112) and the n-doped portion (116) and forms a p-i junction (130) and an i-n junction (134) The LED (101) also includes a metal-dielectric-metal (MDM) structure (104) including a first metal layer (140), a second metal layer (144), and a dielectric medium disposed between the first metal layer (140) and the second metal layer (144). The metal layers of the MDM structure (104) are disposed about orthogonally to the p-i junction (130) and the i-n junction (134); the dielectric medium includes the intrinsic portion (114); and, the MDM structure (104) is configured to enhance modulation frequency of the LED (101) through interaction with surface plasmons that are present in the metal layers.

    Abstract translation: 发光二极管（LED）（101）。 LED（101）包括多个部分，包括p掺杂部分（112），本征部分（114）和n掺杂部分（116）。 本征部分（114）设置在p掺杂部分（112）和n掺杂部分（116）之间，并形成π结（130）和在结（134）中。LED（101）还包括金属 包括第一金属层（140），第二金属层（144）和布置在第一金属层（140）和第二金属层（144）之间的电介质的电 - 金属（MDM）结构（104）。 MDM结构（104）的金属层与p-i结（130）和i-n结（134）正交地设置; 电介质包括本征部分（114）; 并且，MDM结构（104）被配置为通过与存在于​​金属层中的表面等离子体相互作用来增强LED（101）的调制频率。

    MEMRISTORS WITH ASYMMETRIC ELECTRODES
    2.
    发明申请
    MEMRISTORS WITH ASYMMETRIC ELECTRODES 审中-公开
    不对称电极的电容

    公开(公告)号：WO2011016794A2

    公开(公告)日：2011-02-10

    申请号：PCT/US2009/051936

    申请日：2009-07-28

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  BRATKOVSKI, Alexandre, M. ,  STUKE, Michael ,  YANG, Jianhua ,  WANG, Shih-yuan

    Inventor： BRATKOVSKI, Alexandre, M. ,  STUKE, Michael ,  YANG, Jianhua ,  WANG, Shih-yuan

    CPC classification number: H01L45/1273 ,  G11C13/0007 ,  G11C16/02 ,  G11C2213/19 ,  G11C2213/52 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148

    Abstract: Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device (100) comprises an active region (102), a first electrode (104) disposed on a first surface of the active region, and a second electrode (106) disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a larger width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region (108) within the active region between the first electrode and the second electrode.

    Abstract translation: 本发明的实施例涉及提供非易失性忆阻转换的纳米级忆阻器装置。 在一个实施例中，忆阻器装置（100）包括有源区（102），设置在有源区的第一表面上的第一电极（104）和设置在有源区的第二表面上的第二电极 ，与第一表面相对的第二表面。 第一电极被构造成在第一方向上具有比有效区域更大的宽度，并且第二电极被配置为在第二方向上具有比有效区域更大的宽度。 向至少一个电极施加电压产生穿过第一电极和第二电极之间的有源区域内的子区域（108）的电场。

    DYNAMICALLY RECONFIGURABLE HOLOGRAMS
    4.
    发明申请
    DYNAMICALLY RECONFIGURABLE HOLOGRAMS 审中-公开
    动态可重构的HOLOGRAMS

    公开(公告)号：WO2010077221A1

    公开(公告)日：2010-07-08

    申请号：PCT/US2008/014085

    申请日：2008-12-29

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  WANG, Shih-yuan ,  BRATKOVSKI, Alexandre M. ,  WILLIAMS, R. Stanley ,  LI, Jingjing ,  WU, Wei ,  KUEKES, Philip J.

    Inventor： WANG, Shih-yuan ,  BRATKOVSKI, Alexandre M. ,  WILLIAMS, R. Stanley ,  LI, Jingjing ,  WU, Wei ,  KUEKES, Philip J.

    IPC: G03H1/04

    CPC classification number: G03H1/02 ,  G02B1/007 ,  G03H1/2249 ,  G03H1/2294 ,  G03H2001/0224 ,  G03H2210/30 ,  G03H2225/22 ,  G03H2225/32 ,  G03H2225/33

    Abstract: Various embodiments of the present invention relate to systems that can be used as holograms and can be electronically controlled and dynamically reconfigured to generate three-dimensional motion picture images. In one embodiment, a dynamically reconfigurable hologram (1200) comprises a phase-control layer (1202) including a two-dimensional array of phase-modulation pixels (1212). The hologram also comprises an intensity-control layer (1204) including a two-dimensional array of intensity-control pixels (1214). One or more three-dimensional motion pictures can be produced by electronically addressing the individual phase-modulation pixels and intensity-control pixels in order to phase and control the intensity of light emanating from pixels of the hologram.

    Abstract translation: 本发明的各种实施例涉及可以用作全息图并且可以被电子控制和动态重新配置以产生三维运动图像图像的系统。 在一个实施例中，动态可重构全息图（1200）包括包括相位调制像素的二维阵列（1212）的相位控制层（1202）。 全息图还包括包括强度控制像素（1214）的二维阵列的强度控制层（1204）。 可以通过电子地寻址各个相位调制像素和强度控制像素来产生一个或多个三维运动图像，以便相位和控制从全息图像素发出的光的强度。

    NANOWIRE-BASED PHOTODIODE
    7.
    发明申请
    NANOWIRE-BASED PHOTODIODE 审中-公开
    基于纳米级的光刻胶

    公开(公告)号：WO2009136906A1

    公开(公告)日：2009-11-12

    申请号：PCT/US2008/062683

    申请日：2008-05-05

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  WANG, Shih-yuan ,  TAN, Michael R.

    Inventor： WANG, Shih-yuan ,  TAN, Michael R.

    IPC: H01L31/10 ,  H01L31/101

    CPC classification number: H01L31/105 ,  B82Y20/00

    Abstract: A nanowire-based photodiode 100 and an interdigital p - i - n photodiode 200 use an i -type semiconductor nanowire 140, 240 in an i -region of the photodiode 100, 200. The nanowire-based photodiode 100, 200 includes a first sidewall 110, 212, 210 of a first semiconductor doped with a p -type dopant, a second sidewall 120, 222, 220 of the first semiconductor doped with an n -type dopant, and an intrinsic semiconductor nanowire 140, 240 that spans a trench 130, 230 between the first and second sidewalls. The trench is wider at a top than at a bottom adjacent to a substrate 150, 160, 250. The first semiconductor of one or both of the first sidewall and the second sidewall is single crystalline and together the first sidewall, the nanowire and the second sidewall form a p - i - n semiconductor junction of the photodiode.

    Abstract translation: 基于纳米线的光电二极管100和叉指式光电二极管200在光电二极管100,200的i区域中使用i型半导体纳米线140,240。纳米线基光电二极管100,200包括第一侧壁110,212， 掺杂有p型掺杂剂的第一半导体的第二半导体210，掺杂有n型掺杂剂的第一半导体的第二侧壁120,222,220以及跨越沟槽130,230之间的本征半导体纳米线140,240 第一和第二侧壁。 沟槽在顶部比在与衬底150,160,250相邻的底部更宽。第一侧壁和第二侧壁中的一个或两个的第一半导体是单晶的，并且第一侧壁，纳米线和第二侧壁 侧壁形成光电二极管的引脚半导体结。

    MEMS-BASED PELLICLE BEAMSPLITTER
    8.
    发明申请
    MEMS-BASED PELLICLE BEAMSPLITTER 审中-公开
    基于MEMS的蜂窝结构

    公开(公告)号：WO2009096983A1

    公开(公告)日：2009-08-06

    申请号：PCT/US2008/052718

    申请日：2008-01-31

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  TAN, Michael Renne Ty ,  WANG, Shih-Yuan ,  WU, Wei

    Inventor： TAN, Michael Renne Ty ,  WANG, Shih-Yuan ,  WU, Wei

    IPC: G02B6/125 ,  G02B6/42

    CPC classification number: G02B27/142 ,  G02B6/125 ,  G02B6/4214 ,  G02B6/43 ,  G02B27/14

    Abstract: A method of forming a non-polarizing pellicle beamsplitter having a desired power-tap ratio. The method includes the operation of forming a base layer having a base refractive index on a substrate and arranging a plurality of alternating layers having relatively high and low indexes of refraction respectively over the base layer. The thickness of each of the high index and low index layers is selected to substantially eliminate polarization of the optical beam. The method further includes the operation of removing a selected area of the substrate to create an optical pathway comprised of both the base layer and the plurality of alternating layers, and where the optical pathway is configured to transmit and reflect a selected amount of light in the optical beam.

    Abstract translation: 一种形成具有期望的电力抽头比的非偏振薄膜分束器的方法。 该方法包括在基底上形成具有基底折射率的基底层的操作，并且在基底层上分别布置具有相对较高和较低折射率的多个交替层。 选择每个高折射率层和低折射率层的厚度以基本上消除光束的偏振。 该方法还包括去除衬底的选定区域以创建由基底层和多个交替层两者组成的光学路径的操作，并且其中光学路径被配置为透射和反射所选择的光量 光束。

    MICRORESONATOR SYSTEM AND METHODS OF FABRICATING THE SAME
    9.
    发明申请
    MICRORESONATOR SYSTEM AND METHODS OF FABRICATING THE SAME 审中-公开
    微型激光器系统及其制造方法

    公开(公告)号：WO2009017769A3

    公开(公告)日：2009-04-02

    申请号：PCT/US2008009224

    申请日：2008-07-30

    Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  TAN MICHAEL ,  WANG SHIH-YUAN ,  STEWART DUNCAN ,  FATTAL DAVID

    Inventor： TAN MICHAEL ,  WANG SHIH-YUAN ,  STEWART DUNCAN ,  FATTAL DAVID

    IPC: H01S3/08 ,  H01S3/109

    CPC classification number: H01S5/1075 ,  B82Y20/00 ,  G02B6/12007 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/026 ,  H01S5/0422 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/2063 ,  H01S5/222 ,  H01S5/3211 ,  H01S5/34306

    Abstract: Various embodiments of the present invention are related to microresonator systems that can be used as a laser, a modulator, and a photodetector and to methods for fabricating the microresonator systems. In one embodiment, a microresonator system (100) comprises a substrate (106) having a top surface layer (104), at least one waveguide (114,116) embedded within the substrate (106), and a microdisk (102) having a top layer (118), an intermediate layer (122), a bottom layer (120), current isolation region (128), and a peripheral annular region (124,126). The bottom layer (120) of the microdisk (102) is in electrical communication with the top surface layer (104) of the substrate (106) and is positioned so that at least a portion of the peripheral annular region (124,126) is located above the at least one waveguide (114,116). The current isolation region (128) is configured to occupy at least a portion of a central region of the microdisk and has a relatively lower refractive index and relatively larger bandgap than the peripheral annular region.

    Abstract translation: 本发明的各种实施例涉及可用作激光器，调制器和光电检测器的微谐振器系统以及用于制造微谐振器系统的方法。 在一个实施例中，微谐振器系统（100）包括具有顶表面层（104）的衬底（106），嵌入衬底（106）内的至少一个波导（114,116），以及具有顶层 （118），中间层（122），底层（120），电流隔离区（128）和外围环形区（124,126）。 微盘（102）的底层（120）与衬底（106）的顶表面层（104）电连通，并被定位成使得外围环形区域（124,126）的至少一部分位于上方 该至少一个波导（114,116）。 电流隔离区（128）被配置为占据微盘的中心区域的至少一部分并且具有比外围环形区域相对较低的折射率和相对较大的带隙。

    MICRORESONANTOR SYSTEMS AND METHODS OF FABRICATING THE SAME
    10.
    发明申请
    MICRORESONANTOR SYSTEMS AND METHODS OF FABRICATING THE SAME 审中-公开
    微波分解系统​​及其制备方法

    公开(公告)号：WO2009017770A2

    公开(公告)日：2009-02-05

    申请号：PCT/US2008/009225

    申请日：2008-07-30

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. ,  TAN, Michael ,  WANG, Shih-Yuan ,  STEWART, Duncan ,  FATTAL, David

    Inventor： TAN, Michael ,  WANG, Shih-Yuan ,  STEWART, Duncan ,  FATTAL, David

    IPC: H01S3/08 ,  H01S3/109

    CPC classification number: H01S5/1075 ,  B82Y20/00 ,  G02B6/12007 ,  H01S5/026 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/34306

    Abstract: Various embodiments of the present invention are related to microresonator systems and to methods of fabricating the microresonator systems. In one embodiment, a microresonator system (200) comprises a substrate (206) having a top surface layer (204) and at least one waveguide (214,216) embedded in the substrate and positioned adjacent to the top surface layer of the substrate. The microresonator system also includes a microresonator (202,402) having a top layer (218), an intermediate layer (222), a bottom layer (220), a peripheral region, and a peripheral coating (224). The bottom layer (220) of the microresonator is attached to and in electrical communication with the top surface layer (204) of the substrate. The microresonator is positioned so that at least a portion of the peripheral region is located above the at least one waveguide (214, 216). The peripheral coating (224) covers at least a portion of the peripheral surface and has a relatively lower index of refraction than the top, intermediate, and bottom layers of the microresonator.

    Abstract translation: 本发明的各种实施例涉及微谐振器系统和制造微谐振器系统的方法。 在一个实施例中，微谐振器系统（200）包括具有顶表面层（204）的衬底（206）和嵌入衬底中的至少一个波导（214,216），并且邻近衬底的顶表面层定位。 微谐振器系统还包括具有顶层（218），中间层（222），底层（220），周边区域和外围涂层（224）的微谐振器（202,402）。 微谐振器的底层（220）附着到衬底的顶表面层（204）并且与衬底的顶表面层（204）电连通。 微谐振器被定位成使得周边区域的至少一部分位于至少一个波导（214,216）之上。 周边涂层（224）覆盖周边表面的至少一部分并且具有比微谐振器的顶层，中间层和底层更低的折射率。

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