Abstract:
A lithographic apparatus (LA) applies a pattern repeatedly to target portions (fields, C) across a substrate (W). Prior to applying the pattern an alignment sensor (AS) measures positions of marks in the plane of the substrate and a level sensor (LS) measures height deviations in a direction normal to the plane of the substrate. The apparatus applies the pattern to the substrate while (a) positioning the applied pattern using the positions measured by the alignment sensor and (b) focusing the pattern using the height deviations measured by the level sensor. The apparatus is further arranged (c) to calculate and apply corrections in the positioning of the applied pattern, based on derivatives of the measured height deviations. The corrections may be calculated on intrafield and/or interfield basis. The corrections may be based on changes between the observed height deviations and height deviations measured previously on the same substrate.
Abstract:
A A method of calibrating a substrate positioning system of a lithographic apparatus, the method including: exposing a pattern with the lithographic apparatus on an exposed layer on the surface of a substrate having a reference layer, wherein the pattern corresponds to a movement of the substrate by the substrate positioning system; measuring overlay data between the exposed layer and the reference layer on a plurality of positions on the substrate; transforming the overlay data from a spatial domain to a frequency domain by a discrete cosine transformation; modifying the overlay data in the frequency domain by selecting a subset of the overlay data; transforming the modified overlay data from the frequency domain back to the spatial domain by an inverse discrete cosine transformation; calibrating the substrate positioning system by using the modified overlay data in the spatial domain.
Abstract:
There is disclosed a lithography or exposure apparatus and system, a method of calibrating a lithography or exposure apparatus, and a device manufacturing method. In an embodiment, there is provided an exposure system including a first exposure apparatus and a second exposure apparatus, wherein a data processing device of each of the first and second apparatuses is configured to calculate a control signal using a response function; the combined performance of the programmable patterning device and projection system of each of the first and second apparatuses differs, at least due to manufacturing error; and the response function used by the first apparatus is identical to the response function used by the second apparatus.
Abstract:
A lithographic method comprises exposing number of fields on a substrate, obtaining data about a field (1001) and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields (408, 1011a, 1011b) of the field based on the obtained data. Data relating to each sub-field is processed to produce sub- field correction information. The subsequent exposures of the sub-fields are corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field (408) within a field, overlay error can be minimized for critical features, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to sub-fields rather than only the whole field, residual errors (1103) can be reduced in each sub-field.
Abstract:
A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.
Abstract:
A lithographic apparatus having two substrate tables or two support structures for patterning devices that are positioned by planar motors acting against a magnet plate has one or more balance masses also driven against the magnet plate so as to minimize movement of the magnet plate. Thereby, non-repeating positioning errors related to variations in the position of the magnet plate are reduced.
Abstract:
There is disclosed an exposure apparatus, a device manufacturing method and a method of manufacturing an attenuator. According to an embodiment, the exposure apparatus includes a programmable patterning device configured to provide a plurality of individually controllable radiation beams; a projection system configured to project each of the radiation beams onto a respective location on a target; and an attenuator configured to reduce a standard deviation in maximum radiation flux or background exposure level that can be applied to the target by the radiation beams as a function of position on the target.
Abstract:
A method of loading a flexible substrate, a device manufacturing method, an apparatus for loading a flexible substrate, and a lithography apparatus. According to an embodiment, there is provided a method of loading a flexible substrate onto a support for use in an exposure apparatus, including transferring the substrate progressively from a substrate carrier to the support in a way that a boundary line separating a region of the substrate that is loaded onto the support and a region of the substrate that is not yet loaded onto the support remains substantially straight during the loading process.
Abstract:
A lithographic or exposure apparatus (1) has a projection system (12, 14, 18) and a controller (500). The projection system includes a stationary part (12) and a moving part (14, 18). The projection system is configured to project a plurality of radiation beams onto locations on a target. The locations are selected based on a pattern. The controller is configured to control the apparatus to operate in a first mode or a second mode. In the first mode the projection system delivers a first amount of energy to the selected locations. In the second mode the projection system delivers a second amount of energy to the selected locations. The second amount of energy is greater than the first amount of energy.
Abstract:
An apparatus or method to calculate target dose values to be applied by a plurality of radiation beams at a plurality of different times in order to form a desired dose pattern on a target, each target dose value defining the dose distribution of a spot exposure formed by the radiation beam to which the target dose value is applied, wherein a nominal position of a characteristic point in the dose distribution of each of the spot exposures lies at a point of a spot exposure grid, and to provide target dose values at the resolution of the spot exposure grid by calculating target dose values at grid points on a lower resolution grid, the lower resolution grid having a resolution lower than the spot exposure grid, and for each of the calculated target dose values, deriving a target dose value at each of a plurality of points in the spot exposure grid.