公开(公告)号：WO2018086825A1

公开(公告)日：2018-05-17

申请号：PCT/EP2017/076419

申请日：2017-10-17

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DIJK, Leon, Paul ,  CALADO, Victor, Emanuel ,  LIU, Xing Lan ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F7/20 ,  G03F9/00

Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form wafer shape measurements are performed (304). A model is applied (306), transforming the measured warp to modeled warp scaling values (308). Wafers are clamped to a chuck in a lithographic apparatus, causing wafer deformation. Alignment marks are measured using the scanner alignment system (312) with four alignment measurement colors. Scaling values (314) thus obtained are corrected (316) with the modeled warp scaling values (308) to determine corrected scaling values (318). The optimal alignment measurement color is determined, based on the corrected scaling values (318). Scaling values are selected that were measured using the optimal alignment measurement color and, at step (326), the wafer grid (328) is determined using the selected scaling values. A wafer is exposed (330) using the determined wafer grid (328) to correct exposure of the wafer.

Abstract translation: 描述了确定度量衡系统的最优操作参数设置的方法。 自由形式的晶片形状测量被执行（304）。 应用模型（306），将测量的扭曲变换为建模的扭曲比例值（308）。 晶片夹在光刻设备的卡盘中，导致晶片变形。 使用具有四种对准测量颜色的扫描仪对准系统（312）来测量对准标记。 用建模的扭曲比例值（308）校正（316）如此获得的比例值（314）以确定校正的比例值（318）。 基于校正的缩放值（318）确定最佳对准测量颜色。 选择使用最佳对准测量颜色测量的缩放值，并且在步骤（326），使用所选择的缩放值来确定晶片网格（328）。 使用所确定的晶圆网格（328）将晶圆暴露（330）以校正晶圆的曝光。

公开(公告)号：WO2016124393A1

公开(公告)日：2016-08-11

申请号：PCT/EP2016/051007

申请日：2016-01-19

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Xing Lan ,  SMILDE, Hendrik, Jan, Hidde ,  PENG, Yue-Lin ,  CEKLI, Hakki, Ergun ,  PELLO, Josselin ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F7/20

CPC classification number: G01B11/272 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7007

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.

Abstract translation: 公开了一种测量光刻工艺参数的方法，以及相关联的计算机程序和设备。 该方法包括在衬底上提供多个目标结构，每个靶结构包括在衬底的不同层上的第一结构和第二结构。 用测量辐射测量每个目标结构以获得目标结构中的目标不对称性的测量，所述目标不对称性由于第一和第二结构的未对准而包括覆盖贡献，以及由于至少第一个结构中的结构不对称的结构贡献 结构体。 获得与每个目标结构的至少第一结构中的结构不对称有关的结构不对称特征，结构不对称特性与测量辐射的至少一个所选特征无关。 然后使用目标不对称性和结构不对称特征的测量来确定每个目标结构的目标不对称的覆盖贡献。

公开(公告)号：WO2016030255A3

公开(公告)日：2016-03-03

申请号：PCT/EP2015/069062

申请日：2015-08-19

Applicant: ASML NETHERLANDS B.V.

Inventor： BHATTACHARYYA, Kaustuve ,  VAN BUEL, Henricus, Wilhelmus, Maria ,  FOUQUET, Christophe, David ,  SMILDE, Hendrik, Jan, Hidde ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie, Jeffrey ,  VAN HAREN, Richard, Johannes, Franciscus ,  LIU, Xing Lan ,  BELTMAN, Johannes, Marcus, Maria ,  FUCHS, Andreas ,  ADAM, Omer, Abubaker, Omer ,  KUBIS, Michael ,  JAK, Martin, Jacobus, Johan

IPC: G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer. A method of devising such a measurement target involving locating an assist feature at a periphery of the sub-targets, the assist feature being configured to reduce measured intensity peaks at the periphery of the sub-targets.

Abstract translation: 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标均包括一对周期性结构，以及 第一子目标具有与第二子目标不同的设计，包括第一子目标周期性结构的不同设计具有与第二子目标周期性结构不同的间距，特征宽度，空间宽度和/或分段 或（2）第一和第二子目标分别在第一层中包括第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下的第二层中的第一周期性结构的下方，并且存在 在第二层中的第二周期性结构下方没有周期性结构，并且第四周期性结构至少部分地位于第二层下方的第三层中的第二周期性结构下方。 一种设计这种测量目标的方法涉及在辅助目标的外围定位辅助特征，辅助特征被配置为减少在辅助目标的外围处测量的强度峰值。

公开(公告)号：WO2015104074A1

公开(公告)日：2015-07-16

申请号：PCT/EP2014/072717

申请日：2014-10-23

Applicant: ASML NETHERLANDS B.V.

Inventor： CEKLI, Hakki Ergün ,  LIU, Xing Lan ,  SLOTBOOM, Daan, Maurits ,  TEL, Wim, Tjibbo ,  VAN DER SANDEN, Stefan, Cornelis, Theodorus ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F9/00 ,  G03F7/20

CPC classification number: G03F7/70141 ,  G03F9/7003 ,  G03F9/7092

Abstract: A lithographic apparatus (LA) applies a pattern repeatedly to target portions (fields, C) across a substrate (W). Prior to applying the pattern an alignment sensor (AS) measures positions of marks in the plane of the substrate and a level sensor (LS) measures height deviations in a direction normal to the plane of the substrate. The apparatus applies the pattern to the substrate while (a) positioning the applied pattern using the positions measured by the alignment sensor and (b) focusing the pattern using the height deviations measured by the level sensor. The apparatus is further arranged (c) to calculate and apply corrections in the positioning of the applied pattern, based on derivatives of the measured height deviations. The corrections may be calculated on intrafield and/or interfield basis. The corrections may be based on changes between the observed height deviations and height deviations measured previously on the same substrate.

Abstract translation: 光刻设备（LA）通过衬底（W）重复地对目标部分（场，C）施加图案。 在施加图案之前，对准传感器（AS）测量标记在基板的平面中的位置，并且液位传感器（LS）测量垂直于基板平面的方向的高度偏差。 该装置将图案应用于基板，同时（a）使用由对准传感器测量的位置定位所施加的图案，并且（b）使用由液位传感器测量的高度偏差对图案进行聚焦。 该设备还被布置为（c）基于所测量的高度偏差的导数来计算和应用所施加的图案的定位中的校正。 校正可以在场内和/或场间基础上计算。 校正可以基于先前在同一衬底上测量的观察到的高度偏差和高度偏差之间的变化。