公开(公告)号：WO2018202361A1

公开(公告)日：2018-11-08

申请号：PCT/EP2018/058096

申请日：2018-03-29

Applicant: ASML NETHERLANDS B.V.

Inventor： YPMA, Alexander ,  TABERY, Cyrus, Emil ,  VAN GORP, Simon, Hendrik, Celine ,  LIN, Chenxi ,  SONNTAG, Dag ,  CEKLI, Hakki, Ergun ,  ALVAREZ SANCHEZ, Ruben ,  LIU, Shih-Chin ,  HASTINGS, Simon, Philip, Spencer ,  MENCHTCHIKOV, Boris ,  DE RUITER, Christiaan, Theodoor ,  TEN BERGE, Peter ,  LERCEL, Michael, James ,  DUAN, Wei ,  GUITTET, Pierre-Yves, Jerome, Yvan

IPC: G03F7/20

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including measured electrical characteristics from previously processed substrates and process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

公开(公告)号：WO2022199958A1

公开(公告)日：2022-09-29

申请号：PCT/EP2022/054161

申请日：2022-02-18

Applicant: ASML NETHERLANDS B.V.

Inventor： REHMAN, Samee, Ur ,  MENCHTCHIKOV, Boris ,  SOCHA, Robert, John

IPC: G03F9/00

Abstract: Disclosed is a method of identifying one or more dominant asymmetry modes relating to asymmetry in an alignment mark, the method comprises obtaining alignment data relating to measurement of alignment marks on at least one substrate using a plurality of alignment conditions; identifying one or more dominant orthogonal components of said alignment data, said one or more orthogonal components comprising a number of said orthogonal components which together sufficiently describes variance in said alignment data; and determining an asymmetry mode as dominant if it corresponds to an expected asymmetry mode shape which best matches one of said dominant orthogonal components. Alternatively, the method comprises, for each known asymmetric mode: determining a sensitivity metric; and determining an asymmetry mode as dominant if said sensitivity metric is above a sensitivity threshold.

公开(公告)号：WO2020126242A1

公开(公告)日：2020-06-25

申请号：PCT/EP2019/081282

申请日：2019-11-14

Applicant: ASML NETHERLANDS B.V.

Inventor： BRANTJES, Nicolaas Petrus Marcus ,  COX, Matthijs ,  MENCHTCHIKOV, Boris ,  TABERY, Cyrus, Emil ,  ZHANG, Youping ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana ,  HASTINGS, Simon, Philip, Spencer ,  GENIN, Maxime, Philippe, Frederic

IPC: G03F7/20 ,  G03F9/00

Abstract: Disclosed is a method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method comprising: obtaining a first set of pre-process metrology data; processing the first set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed first set of pre-process metrology data to determine the correction for said semiconductor manufacturing process.

公开(公告)号：WO2020114686A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/079691

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Youping ,  MENCHTCHIKOV, Boris ,  TABERY, Cyrus, Emil ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana ,  HASTINGS, Simon, Philip, Spencer ,  GENIN, Maxime

IPC: G03F7/20

Abstract: Described is a method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method comprising: obtaining a trained first model which translates modeled parameters into a yield parameter, said modeled parameters comprising: a) geometrical parameters associated with one or more of: a geometric characteristic, dimension or position of a device element manufactured by the process and b) trained free parameters; obtaining process parameter data comprising process parameters characterizing the process; converting the process parameter data into values of the geometrical parameters; and predicting the yield parameter using the trained first model and the values of the geometrical parameters.

公开(公告)号：WO2020114684A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/079640

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： SLACHTER, Abraham ,  TEL, Wim, Tjibbo ,  SLOTBOOM, Daan, Maurits ,  TIMOSHKOV, Vadim, Yourievich ,  VAN DER STRATEN, Koen, Wilhelmus, Cornelis, Adrianus ,  MENCHTCHIKOV, Boris ,  HASTINGS, Simon, Philip, Spencer ,  TABERY, Cyrus, Emil ,  GENIN, Maxime, Philippe, Frederic ,  ZHANG, Youping ,  ZOU, Yi ,  LIN, Chenxi ,  CHENG, Yana

IPC: G03F7/20

Abstract: A method for analyzing a process, the method including: obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.

公开(公告)号：WO2016078862A1

公开(公告)日：2016-05-26

申请号：PCT/EP2015/074460

申请日：2015-10-22

Applicant: ASML NETHERLANDS B.V.

Inventor： LU, Yen-Wen ,  CHEN, Jay, Jianhui ,  LIU, Wei ,  MENCHTCHIKOV, Boris ,  WANG, Jen-Shiang ,  HUANG, Te-Chih

IPC: G03F7/20

CPC classification number: G01N21/8806 ,  G01B11/272 ,  G01N21/9501 ,  G01N2021/8822 ,  G03F7/70516 ,  G03F7/70633 ,  G03F7/70683

Abstract: Disclosed herein is a method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction order; determining the overlay error from by the corrected characteristics; and adjusting characteristics of the lithographic process based on the overlay error.

Abstract translation: 本文公开了一种确定第一结构和第二结构之间的覆盖误差的方法，其中第一结构和第二结构位于衬底上的不同层上，并通过光刻工艺成像到衬底上，该方法包括：获得 明显叠加错误; 获得由除了第一和第二结构的不对准之外的因素引起的系统误差; 并通过从明显重叠错误中去除系统误差来确定覆盖误差。 该方法可以替代地包括通过第一和第二结构的重叠部分获得衍射衍射级数的明显特征; 获得衍射级的校正特性; 通过校正的特征确定覆盖误差; 并基于叠加误差调整光刻过程的特性。

公开(公告)号：WO2020114692A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/080129

申请日：2019-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： LIN, Chenxi ,  TABERY, Cyrus, Emil ,  CEKLI, Hakki, Ergun ,  HASTINGS, Simon, Philip, Spencer ,  MENCHTCHIKOV, Boris ,  ZOU, Yi ,  CHENG, Yana ,  GENIN, Maxime, Philippe, Frederic ,  CHEN, Tzu-Chao ,  HARUTYUNYAN, Davit ,  ZHANG, Youping

IPC: G03F7/20 ,  H01L21/66

Abstract: Described is a method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method comprising; obtaining yield distribution data comprising the distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set comprising a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

公开(公告)号：WO2014009100A1

公开(公告)日：2014-01-16

申请号：PCT/EP2013/062361

申请日：2013-06-14

Applicant: ASML NETHERLANDS B.V.

Inventor： DANILIN, Alexander, Alexandrovich ,  ARRIZABALAGA, Alejandro ,  MENCHTCHIKOV, Boris ,  PADIY, Alexandre, Viktorovych

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70516 ,  G03F7/70725

Abstract: A A method of calibrating a substrate positioning system of a lithographic apparatus, the method including: exposing a pattern with the lithographic apparatus on an exposed layer on the surface of a substrate having a reference layer, wherein the pattern corresponds to a movement of the substrate by the substrate positioning system; measuring overlay data between the exposed layer and the reference layer on a plurality of positions on the substrate; transforming the overlay data from a spatial domain to a frequency domain by a discrete cosine transformation; modifying the overlay data in the frequency domain by selecting a subset of the overlay data; transforming the modified overlay data from the frequency domain back to the spatial domain by an inverse discrete cosine transformation; calibrating the substrate positioning system by using the modified overlay data in the spatial domain.

Abstract translation: AA方法，其校准光刻设备的衬底定位系统，所述方法包括：在具有参考层的衬底的表面上的暴露层上暴露具有光刻设备的图案，其中所述图案对应于所述衬底的移动 基板定位系统; 在所述衬底上的多个位置上测量所述暴露层和所述参考层之间的覆盖数据; 通过离散余弦变换将叠加数据从空间域变换到频域; 通过选择覆盖数据的子集来修改频域中的覆盖数据; 通过反相离散余弦变换将经修改的覆盖数据从频域转换回空间域; 通过使用空间域中的修改的覆盖数据来校准衬底定位系统。

公开(公告)号：WO2011101187A1

公开(公告)日：2011-08-25

申请号：PCT/EP2011/050438

申请日：2011-01-14

Applicant: ASML Netherlands B.V. ,  PADIY, Alexandre, Viktorovych ,  MENCHTCHIKOV, Boris

Inventor： PADIY, Alexandre, Viktorovych ,  MENCHTCHIKOV, Boris

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70616 ,  G03F7/70516 ,  G03F7/70525 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7019 ,  G03F9/7046

Abstract: A method controls a scanning function of a lithographic apparatus. A first alignment strategy is used. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are periodically retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Corrective action is taken based on the determination. A production wafer is exposed using a second alignment strategy, different to the first alignment strategy. The corrective action is modified so as to be substantially closer to the correction that would have been made had the second alignment strategy been used in exposing the monitor wafer.

Abstract translation: 方法控制光刻设备的扫描功能。 使用第一对齐策略。 暴露监视器晶片以确定与扫描功能有关的基线控制参数。 从监视器晶片周期性地检索基线控制参数。 参数漂移由基线控制参数决定。 根据确定采取纠正措施。 使用与第一对准策略不同的第二对准策略来曝光生产晶片。 校正动作被修改，以便基本上更接近如果在暴露监视器晶片时已经使用第二对准策略将会进行的校正。

公开(公告)号：WO2011101184A1

公开(公告)日：2011-08-25

申请号：PCT/EP2011/050379

申请日：2011-01-13

Applicant: ASML NETHERLANDS B.V. ,  PADIY, Alexandre, Viktorovych ,  MENCHTCHIKOV, Boris

Inventor： PADIY, Alexandre, Viktorovych ,  MENCHTCHIKOV, Boris

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70616 ,  G03F7/70516 ,  G03F9/7011 ,  G03F9/7019

Abstract: A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus, such that the initial exposure is performed while using non-standard alignment model settings optimized for accuracy, such as those used for testing the apparatus. An associated lithographic apparatus is also disclosed.

Abstract translation: 一种方法产生用于光刻设备的至少一个监视晶片。 监视器晶片与扫描控制模块组合使用，以周期性地从监视器晶片检索定义基线的测量结果，从而确定基线的参数漂移。 在这样做时，可以对漂移进行津贴和/或修正。 通过使用光刻设备初始暴露监视器晶片来确定基线，使得在使用针对精度优化的非标准对准模型设置（诸如用于测试设备的那些）时执行初始曝光。 还公开了一种相关的光刻设备。