-
公开(公告)号：WO2006122491A1
公开(公告)日：2006-11-23
申请号：PCT/CN2006/000973
申请日：2006-05-15
Applicant: 安集微电子(上海)有限公司 , 肖正龙 , 杨春晓
IPC: C09G1/02
CPC classification number: C09G1/02
Abstract: The present invention discloses a polishing slurry, wherein, the said polishing slurry contains polishing abrasive grains and a carrier, it further contains a reagent which has two functional groups. The polishing slurry of the present invention can reduce the concentration of the abrasive grains in the polishing slurry and lessen the downwards polishing pressure required in a CMP process, thereby it can improve the quality of the substrate and minimize the rate of defect, at the same time it can keep the desired polishing rate.
-
公开(公告)号：WO2007009366A1
公开(公告)日：2007-01-25
申请号：PCT/CN2006/001703
申请日：2006-07-17
Applicant: 安集微电子(上海)有限公司 , 荆建芬 , 杨春晓 , 肖正龙
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
Abstract: A chemical and mechanical polishing composition comprises at least one abrasive particle and at least one carrier, and further comprises at least one metal corrosive inhibitors. The use of the chemical and mechanical polishing composition in polishing metal is disclosed too. The present composition can largely reduce the defects of metal surface, reduce removal rate of metal, and improve the smoothness of metal surface significantly.
-
公开(公告)号：WO2007009365A1
公开(公告)日：2007-01-25
申请号：PCT/CN2006/001702
申请日：2006-07-17
Applicant: 安集微电子(上海)有限公司 , 杨春晓 , 俞昌 , 肖正龙 , 荆建芬
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
Abstract: A chemical mechanical polishing liquid, comprising at least an abrasive particle, a chemical additive and a carrier material, wherein the chemical additive is polycarboxylic acid or the salt thereof. Said polishing liquid is used to considerably reduce the defective rate, to increase the flatness level of the metal surface, to reduce polishing rate of metal, to optimize the polishing rate of dielectric, and to extend the range of process parameter.
-
Patent Agency Ranking
公开(公告)号：WO2006125371A1
公开(公告)日：2006-11-30
申请号：PCT/CN2006/000972
申请日：2006-05-15
Applicant: 安集微电子(上海)有限公司 , 肖正龙 , 杨春晓
IPC: C09G1/02
CPC classification number: C09G1/02
Abstract: The present invention discloses a polishing slurry for CMP, the said polishing slurry contains polishing abrasive grains, a carrier and an additive, wherein the additive has a hydrophilic group. The properties of the passive film can be changed by altering the structure of the additive in the polishing slurry, thereby it can completely avoid the defect on the polished surface of a substrate ,or it can minimize the rate of defect.
-
公开(公告)号：WO2006111084A1
公开(公告)日：2006-10-26
申请号：PCT/CN2006/000717
申请日：2006-04-19
Applicant: 安集微电子(上海)有限公司 , 俞昌 , 杨春晓 , 肖正龙
IPC: C09G1/02
CPC classification number: C09G1/02
Abstract: The present invention involves a polishing slurry, the said polishing slurry contains at least a kind of polishing abrasive grains, an oxidizing agent and a carrier, wherein the oxidizing agent is combined with a metallic organic macromolecule; The present invention also involves the use and using method of the said poshing slurry . When the polishing slurry of the present invention is used to polish a substrate, it can keep a higher polishing rate , the surface of the polished substrate has no erosion ,and it has lower rate of defect and higher smoothness.
-
公开(公告)号：WO2006111083A1
公开(公告)日：2006-10-26
申请号：PCT/CN2006/000716
申请日：2006-04-19
Applicant: 安集微电子(上海)有限公司 , 杨春晓 , 肖正龙 , 俞昌
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
Abstract: The present invention discloses a polishing slurry and its use in polishing a metal-containing substrate, the said polishing slurry contains polishing abrasive grains, a carrier, Cu 2+ or other higher valency metal salts and a dismutation reactant. The poshing slurry of the present invention has higher polishing rate and polishing selectivity, it can remarkablely reduce the erosion degree of the polished surface of the substrate, thereby the polished surface of the substrate has lower rate of defect.
-
公开(公告)号：WO2007009364A1
公开(公告)日：2007-01-25
申请号：PCT/CN2006/001701
申请日：2006-07-17
CPC classification number: C11D11/0029 , C11D3/0073 , C11D3/3757
Abstract: The present invention defines a washing solution which includes at least an anti corrosion agent. And also the invention defines the use of the washing solution in washing the metal substrate. As comparing with the traditional ones, the washing solution of the invention can notably reduce the corrosion of metal material and has some advantages as following: (1) reducing the defect of metal surface remarkably; (2) improving the flatness of metal surface evidently; (3) improving the quality of articles and increasing the rate of yield in the production; (4) improving washing efficiency.
-
公开(公告)号：WO2006122492A1
公开(公告)日：2006-11-23
申请号：PCT/CN2006/000974
申请日：2006-05-15
Applicant: 安集微电子(上海)有限公司 , 肖正龙 , 杨春晓
IPC: C09G1/02
CPC classification number: C09G1/02
Abstract: The present invention discloses a polishing slurry, wherein, the said polishing slurry contains a carrier and functional-alumina grains. The present polishing slurry which contains functional - alumina grains has good stability, this polishing slurry can reduce the rate of defect , improve the quality of the substrate surface, lessen the total metal loss rate and widen the variation range of the technological parameters.
-
-
-
-
-
-
-
Search Results
8
records
(took 0.017 seconds)
