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公开(公告)号：WO2007009364A1
公开(公告)日：2007-01-25
申请号：PCT/CN2006/001701
申请日：2006-07-17
CPC classification number: C11D11/0029 , C11D3/0073 , C11D3/3757
Abstract: The present invention defines a washing solution which includes at least an anti corrosion agent. And also the invention defines the use of the washing solution in washing the metal substrate. As comparing with the traditional ones, the washing solution of the invention can notably reduce the corrosion of metal material and has some advantages as following: (1) reducing the defect of metal surface remarkably; (2) improving the flatness of metal surface evidently; (3) improving the quality of articles and increasing the rate of yield in the production; (4) improving washing efficiency.
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公开(公告)号：WO2007009365A1
公开(公告)日：2007-01-25
申请号：PCT/CN2006/001702
申请日：2006-07-17
Applicant: 安集微电子(上海)有限公司 , 杨春晓 , 俞昌 , 肖正龙 , 荆建芬
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
Abstract: A chemical mechanical polishing liquid, comprising at least an abrasive particle, a chemical additive and a carrier material, wherein the chemical additive is polycarboxylic acid or the salt thereof. Said polishing liquid is used to considerably reduce the defective rate, to increase the flatness level of the metal surface, to reduce polishing rate of metal, to optimize the polishing rate of dielectric, and to extend the range of process parameter.
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公开(公告)号：WO2006111084A1
公开(公告)日：2006-10-26
申请号：PCT/CN2006/000717
申请日：2006-04-19
Applicant: 安集微电子(上海)有限公司 , 俞昌 , 杨春晓 , 肖正龙
IPC: C09G1/02
CPC classification number: C09G1/02
Abstract: The present invention involves a polishing slurry, the said polishing slurry contains at least a kind of polishing abrasive grains, an oxidizing agent and a carrier, wherein the oxidizing agent is combined with a metallic organic macromolecule; The present invention also involves the use and using method of the said poshing slurry . When the polishing slurry of the present invention is used to polish a substrate, it can keep a higher polishing rate , the surface of the polished substrate has no erosion ,and it has lower rate of defect and higher smoothness.
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公开(公告)号：WO2006111083A1
公开(公告)日：2006-10-26
申请号：PCT/CN2006/000716
申请日：2006-04-19
Applicant: 安集微电子(上海)有限公司 , 杨春晓 , 肖正龙 , 俞昌
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
Abstract: The present invention discloses a polishing slurry and its use in polishing a metal-containing substrate, the said polishing slurry contains polishing abrasive grains, a carrier, Cu 2+ or other higher valency metal salts and a dismutation reactant. The poshing slurry of the present invention has higher polishing rate and polishing selectivity, it can remarkablely reduce the erosion degree of the polished surface of the substrate, thereby the polished surface of the substrate has lower rate of defect.
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公开(公告)号：WO2008058458A1
公开(公告)日：2008-05-22
申请号：PCT/CN2007/003196
申请日：2007-11-12
Applicant: 安集微电子(上海)有限公司 , 俞昌 , 杨春晓 , 荆建芬
IPC: H01L21/302 , H01L21/304 , H01L21/321
CPC classification number: H01L21/3212 , H01L21/31053
Abstract: A multiplestep CMP method is provided The method comprises the following CMP steps The first CMP step comprises chemical-mechanical polishing process which most of polysilicon are removed at a rate of 200 A/min or larger by using a CMP solution, without exposing the surface of polysilicon After an oxidant is added into the CMP solution, the second CMP step is performed by using the CMP solution which polishes the surface of polysilicon and silicon oxide The method can avoid surface dishing, improve wafer flatness, and make the process more stable
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Patent Agency Ranking
公开(公告)号：WO2006076857A1
公开(公告)日：2006-07-27
申请号：PCT/CN2006/000067
申请日：2006-01-17
Applicant: 安集微电子(上海)有限公司 , 杨春晓 , 俞昌
IPC: H01L21/304 , B24B37/00
CPC classification number: H01L21/31058 , B24B37/044 , B24B57/04 , C09G1/02 , C09K3/1463 , Y02P70/179
Abstract: The present invention provides a chemical-mechanical polishing system and process to treat a surface of a semiconductor wafer with polymer film. The process comprises clipping chemically said surface and then applying the chemical mechanic polishing method by means of abrasive slurry to treat said surface.
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公开(公告)号：WO2011097954A1
公开(公告)日：2011-08-18
申请号：PCT/CN2011/000205
申请日：2011-02-09
Applicant: 安集微电子(上海)有限公司 , 王晨 , 俞昌 , 何华峰
IPC: H01L21/304 , C23F1/26 , C09K3/14 , C09G1/02
CPC classification number: H01L21/3212 , C09G1/02 , C23F3/06
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公开(公告)号：WO2006125369A1
公开(公告)日：2006-11-30
申请号：PCT/CN2006/000955
申请日：2006-05-12
Applicant: 安集微电子(上海)有限公司 , 王淑敏 , 俞昌
IPC: G03F7/42
CPC classification number: G03F7/423
Abstract: A new composition for removing a photoresist layer and a method for using it are disclosed. The composition comprises a polar solvent and an oxidizer. The composition according to the present invention uses the chemical substances which have lower toxicity and poorer flammability and reduces the amount of chemical constituent, which makes it more friendly with the environment and decreases the expense of disposing of the waste. The method for using the composition shortens the time of cleaning and more entirely removes the residue, thereby enhancing the electrical conductivity.
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公开(公告)号：WO2007137508A1
公开(公告)日：2007-12-06
申请号：PCT/CN2007/001696
申请日：2007-05-24
IPC: C09G1/02 , H01L21/304 , C09K3/14
CPC classification number: H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/3212
Abstract: A polishing slurry for subtle surface planarization and its using method are disclosed. The present polishing slurry for subtle surface planarization includes abrasive and water, it is characterized in that the abrasive is a colloidal Al-doped silica abrasive, this colloidal Al-doped silica abrasive is an aqueous dispersion of Al-doped silica. When using the present polishing slurry for subtle surface planarization in CMP process, the downward pressure is 0.5-3psi. The present polishing slurry for subtle surface -planarization can effectively polish Ta, TaN, TEOS, FSG, BD or other lower dielectric material and so on, and the polishing rate for lower dielectric material can be increased by two times, while excellent planarization effect can be obtained.
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