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公开(公告)号：WO2007009364A1
公开(公告)日：2007-01-25
申请号：PCT/CN2006/001701
申请日：2006-07-17
CPC classification number: C11D11/0029 , C11D3/0073 , C11D3/3757
Abstract: The present invention defines a washing solution which includes at least an anti corrosion agent. And also the invention defines the use of the washing solution in washing the metal substrate. As comparing with the traditional ones, the washing solution of the invention can notably reduce the corrosion of metal material and has some advantages as following: (1) reducing the defect of metal surface remarkably; (2) improving the flatness of metal surface evidently; (3) improving the quality of articles and increasing the rate of yield in the production; (4) improving washing efficiency.
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公开(公告)号：WO2007009365A1
公开(公告)日：2007-01-25
申请号：PCT/CN2006/001702
申请日：2006-07-17
Applicant: 安集微电子(上海)有限公司 , 杨春晓 , 俞昌 , 肖正龙 , 荆建芬
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
Abstract: A chemical mechanical polishing liquid, comprising at least an abrasive particle, a chemical additive and a carrier material, wherein the chemical additive is polycarboxylic acid or the salt thereof. Said polishing liquid is used to considerably reduce the defective rate, to increase the flatness level of the metal surface, to reduce polishing rate of metal, to optimize the polishing rate of dielectric, and to extend the range of process parameter.
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公开(公告)号：WO2007009366A1
公开(公告)日：2007-01-25
申请号：PCT/CN2006/001703
申请日：2006-07-17
Applicant: 安集微电子(上海)有限公司 , 荆建芬 , 杨春晓 , 肖正龙
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
Abstract: A chemical and mechanical polishing composition comprises at least one abrasive particle and at least one carrier, and further comprises at least one metal corrosive inhibitors. The use of the chemical and mechanical polishing composition in polishing metal is disclosed too. The present composition can largely reduce the defects of metal surface, reduce removal rate of metal, and improve the smoothness of metal surface significantly.
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公开(公告)号：WO2008058458A1
公开(公告)日：2008-05-22
申请号：PCT/CN2007/003196
申请日：2007-11-12
Applicant: 安集微电子(上海)有限公司 , 俞昌 , 杨春晓 , 荆建芬
IPC: H01L21/302 , H01L21/304 , H01L21/321
CPC classification number: H01L21/3212 , H01L21/31053
Abstract: A multiplestep CMP method is provided The method comprises the following CMP steps The first CMP step comprises chemical-mechanical polishing process which most of polysilicon are removed at a rate of 200 A/min or larger by using a CMP solution, without exposing the surface of polysilicon After an oxidant is added into the CMP solution, the second CMP step is performed by using the CMP solution which polishes the surface of polysilicon and silicon oxide The method can avoid surface dishing, improve wafer flatness, and make the process more stable
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公开(公告)号：WO2006111084A1
公开(公告)日：2006-10-26
申请号：PCT/CN2006/000717
申请日：2006-04-19
Applicant: 安集微电子(上海)有限公司 , 俞昌 , 杨春晓 , 肖正龙
IPC: C09G1/02
CPC classification number: C09G1/02
Abstract: The present invention involves a polishing slurry, the said polishing slurry contains at least a kind of polishing abrasive grains, an oxidizing agent and a carrier, wherein the oxidizing agent is combined with a metallic organic macromolecule; The present invention also involves the use and using method of the said poshing slurry . When the polishing slurry of the present invention is used to polish a substrate, it can keep a higher polishing rate , the surface of the polished substrate has no erosion ,and it has lower rate of defect and higher smoothness.
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Patent Agency Ranking
公开(公告)号：WO2006111083A1
公开(公告)日：2006-10-26
申请号：PCT/CN2006/000716
申请日：2006-04-19
Applicant: 安集微电子(上海)有限公司 , 杨春晓 , 肖正龙 , 俞昌
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
Abstract: The present invention discloses a polishing slurry and its use in polishing a metal-containing substrate, the said polishing slurry contains polishing abrasive grains, a carrier, Cu 2+ or other higher valency metal salts and a dismutation reactant. The poshing slurry of the present invention has higher polishing rate and polishing selectivity, it can remarkablely reduce the erosion degree of the polished surface of the substrate, thereby the polished surface of the substrate has lower rate of defect.
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公开(公告)号：WO2009097737A1
公开(公告)日：2009-08-13
申请号：PCT/CN2009/000071
申请日：2009-01-19
Applicant: 安集微电子(上海)有限公司 , 王晨 , 荆建芬 , 杨春晓
IPC: C09K3/14 , H01L21/304 , C09G1/02
CPC classification number: H01L21/3212 , C09G1/02 , C09K3/1463
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公开(公告)号：WO2009070969A1
公开(公告)日：2009-06-11
申请号：PCT/CN2008/001858
申请日：2008-11-07
Applicant: 安集微电子(上海)有限公司 , 荆建芬 , 杨春晓 , 王晨
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
Abstract: A chemical-mechanical polishing liquid for polysilicon is disclosed, which contains abrasive particles, water and at least one compound having more than two group of [-C(NH)-NH-]. The polishing liquid can improve the removal rate of polysilicon and selection ratio of polysilicon to dielectric material. It has better application foreground in the production field of the wafers of semiconductor and the like.
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公开(公告)号：WO2008116379A1
公开(公告)日：2008-10-02
申请号：PCT/CN2008/000510
申请日：2008-03-14
Applicant: 安集微电子(上海)有限公司 , 荆建芬 , 杨春晓
IPC: C11D7/18 , C11D7/32 , H01L21/302
CPC classification number: C11D7/3272 , C11D7/04 , C11D7/26 , H01L21/02065 , H01L21/02074
Abstract: A cleaning solution is provided, which includes at least one type of oxidizer, at least one type of guanidine compound and water. The use of the cleaning solution in wafer cleaning after CMP is also provided.
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公开(公告)号：WO2008067731A1
公开(公告)日：2008-06-12
申请号：PCT/CN2007/003482
申请日：2007-12-07
Applicant: 安集微电子(上海)有限公司 , 杨春晓 , 荆建芬
IPC: C09G1/02 , C09G1/16 , H01L21/304
CPC classification number: H01L21/32133 , C09G1/02
Abstract: The present invention discloses the application of polymers which comprise repeating units containing -(RO)- or -(RCOO)- groups in production of chemical mechanical polishing liquid of self-etch-stop of polysilicon and usage of the same, in which R is alkyl of C 1-10 . The polymers of the invention are used in production of polishing liquid and usage of the same, it can realize the process of self-etch-stop mechanism in chemical mechanical polishing of polysilicon under polishing conditions of constant conventional technical parameter, so as to prevent silicon dioxide channels from generating dishing defects of polysilicon, and to remove residual polysilicon from the silicon dioxide dishing defects and improve surface flatness of the polished wafers. Furthermore it has wide technology window, which can greatly improve the productivity and lower the cost.
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