IN SITU MODIFICATION OF GROUP IV NANOPARTICLES USING GAS PHASE NANOPARTICLE REACTORS
    2.
    发明申请
    IN SITU MODIFICATION OF GROUP IV NANOPARTICLES USING GAS PHASE NANOPARTICLE REACTORS 审中-公开
    使用气相纳米材料反应器的第四组纳米粒子的现场改性

    公开(公告)号:WO2008143716A2

    公开(公告)日:2008-11-27

    申请号:PCT/US2007/089213

    申请日:2007-12-31

    摘要: A method for creating an organically capped Group IV semiconductor nanoparticle is disclosed. The method includes flowing a Group IV semiconductor precursor gas into a chamber. The method also includes generating a set of Group IV semiconductor precursor radical species from the Group IV semiconductor precursor gas with a laser pyrolysis apparatus, wherein the set of the Group IV semiconductor precursor radical species nucleate to form the Group IV semiconductor nanoparticle; and flowing an organic capping agent precursor gas into the chamber. The method further includes generating a set of organic capping agent radical species from the organic capping agent precursor gas, wherein the set of organic capping agent radical species reacts with a surface of the Group IV semiconductor nanoparticle and forms the organically capped Group IV semiconductor nanoparticle.

    摘要翻译: 公开了一种用于产生有机封端的IV族半导体纳米颗粒的方法。 该方法包括将IV族半导体前体气体流入室中。 该方法还包括用激光热解装置从第IV族半导体前体气体生成一组IV族半导体前体基团物质,其中该组IV族半导体前体自由基团成核形成第IV族半导体纳米颗粒; 并将有机封端剂前体气体流入室中。 该方法还包括从有机封端剂前体气体产生一组有机封端剂自由基物质,其中该组有机封端剂自由基物质与第IV族半导体纳米颗粒的表面反应并形成有机封端的第IV族半导体纳米颗粒。

    IN SITU MODIFICATION OF GROUP IV NANOPARTICLES USING GAS PHASE NANOPARTICLE REACTORS
    4.
    发明申请
    IN SITU MODIFICATION OF GROUP IV NANOPARTICLES USING GAS PHASE NANOPARTICLE REACTORS 审中-公开
    使用气相纳米材料反应器的第四组纳米粒子的现场改性

    公开(公告)号:WO2008143716A3

    公开(公告)日:2009-09-11

    申请号:PCT/US2007089213

    申请日:2007-12-31

    摘要: A method for creating an organically capped Group IV semiconductor nanoparticle is disclosed. The method includes flowing a Group IV semiconductor precursor gas into a chamber. The method also includes generating a set of Group IV semiconductor precursor radical species from the Group IV semiconductor precursor gas with a laser pyrolysis apparatus, wherein the set of the Group IV semiconductor precursor radical species nucleate to form the Group IV semiconductor nanoparticle; and flowing an organic capping agent precursor gas into the chamber. The method further includes generating a set of organic capping agent radical species from the organic capping agent precursor gas, wherein the set of organic capping agent radical species reacts with a surface of the Group IV semiconductor nanoparticle and forms the organically capped Group IV semiconductor nanoparticle.

    摘要翻译: 公开了一种用于产生有机封端的IV族半导体纳米颗粒的方法。 该方法包括将IV族半导体前体气体流入室中。 该方法还包括用激光热解装置从第IV族半导体前体气体生成一组IV族半导体前体基团物质,其中该组IV族半导体前体自由基团成核形成第IV族半导体纳米颗粒; 并将有机封端剂前体气体流入室中。 该方法还包括从有机封端剂前体气体产生一组有机封端剂自由基物质,其中该组有机封端剂自由基物质与第IV族半导体纳米颗粒的表面反应并形成有机封端的第IV族半导体纳米颗粒。