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公开(公告)号：WO2006116030A3
公开(公告)日：2006-11-02
申请号：PCT/US2006/015003
申请日：2006-04-21
Applicant: AONEX TECHNOLOGIES, INC. , PINNINGTON, Thomas, Henry , ZAHLER, James, M. , PARK, Young-bae , TSAI, Charles , LADOUS, Corinne , ATWATER, Harry, JR., A. , OLSON, Sean
Inventor： PINNINGTON, Thomas, Henry , ZAHLER, James, M. , PARK, Young-bae , TSAI, Charles , LADOUS, Corinne , ATWATER, Harry, JR., A. , OLSON, Sean
IPC: H01L29/06
Abstract: An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a Ill-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, while the thin layer may be a sapphire layer. A method of making the intermediate substrate includes forming a weak interface in the source substrate, bonding the source substrate to the handle substrate, and exfoliating the thin layer from the source substrate such that the thin layer remains bonded to the handle substrate.
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2.发明申请GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER 审中-公开GaInP / GaAs / Si三键结太阳能电池通过波形耦合和层传输
公开(公告)号：WO2006015185A3
公开(公告)日：2009-04-09
申请号：PCT/US2005026913
申请日：2005-08-01
Applicant: AONEX TECHNOLOGIES INC , ZAHLER JAMES M , ATWATER HARRY A JR , MORRAL ANNA FONTCUBERTA I
Inventor： ZAHLER JAMES M , ATWATER HARRY A JR , MORRAL ANNA FONTCUBERTA I
IPC: H01L31/00 , H01L21/302 , H01L31/0328
CPC classification number: H01L31/0725 , C30B23/02 , C30B25/02 , C30B29/40 , C30B29/42 , H01L31/028 , H01L31/0288 , H01L31/0304 , H01L31/03046 , H01L31/0687 , H01L31/0735 , H01L31/1804 , H01L31/1852 , H01L31/1892 , Y02E10/544 , Y02E10/547 , Y02P70/521
Abstract: A multi-junction solar cell includes a silicon solar subcell, a GaInP solar subcell, and a GaAs solar subcell located between the silicon solar subcell and the GaInP solar subcell. The GaAs solar subcell is bonded to the silicon solar subcell such that a bonded interface exists between these subcells.
Abstract translation: 多结太阳能电池包括硅太阳能子电池，GaInP太阳能子电池和位于硅太阳能子电池和GaInP太阳能子电池之间的GaAs太阳能子电池。 GaAs太阳能子电池结合到硅太阳能子电池，使得在这些子电池之间存在键合界面。
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公开(公告)号：WO2006116030A2
公开(公告)日：2006-11-02
申请号：PCT/US2006015003
申请日：2006-04-21
Applicant: AONEX TECHNOLOGIES INC , PINNINGTON THOMAS HENRY , ZAHLER JAMES M , PARK YOUNG-BAE , TSAI CHARLES , LADOUS CORINNE , ATWATER HARRY JR A , OLSON SEAN
Inventor： PINNINGTON THOMAS HENRY , ZAHLER JAMES M , PARK YOUNG-BAE , TSAI CHARLES , LADOUS CORINNE , ATWATER HARRY JR A , OLSON SEAN
CPC classification number: H01L33/0079 , B82Y20/00 , H01L21/2007 , H01L33/145 , H01L33/32 , H01L33/405 , H01L2924/0002 , H01L2924/00
Abstract: An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a Ill-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, while the thin layer may be a sapphire layer. A method of making the intermediate substrate includes forming a weak interface in the source substrate, bonding the source substrate to the handle substrate, and exfoliating the thin layer from the source substrate such that the thin layer remains bonded to the handle substrate.
Abstract translation: 中间基板包括结合到适合于诸如III族氮化物半导体层的化合物半导体层的外延生长的薄层的手柄基板。 手柄基板可以是金属或金属合金基板，例如钼或钼合金基板，而薄层可以是蓝宝石层。 制造中间基板的方法包括在源极基板中形成弱界面，将源极基板接合到手柄基板，以及将薄层从源极基板剥离，使得薄层保持结合到手柄基板上。
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4.发明申请GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER 审中-公开GaInP / GaAs / Si三键结太阳能电池通过波形耦合和层传输
公开(公告)号：WO2006015185A2
公开(公告)日：2006-02-09
申请号：PCT/US2005/026913
申请日：2005-08-01
Applicant: AONEX TECHNOLOGIES, INC. , ZAHLER, James, M. , ATWATER, Harry, A., Jr. , MORRAL, Anna, Fontcuberta, I.
CPC classification number: H01L31/0725 , C30B23/02 , C30B25/02 , C30B29/40 , C30B29/42 , H01L31/028 , H01L31/0288 , H01L31/0304 , H01L31/03046 , H01L31/0687 , H01L31/0735 , H01L31/1804 , H01L31/1852 , H01L31/1892 , Y02E10/544 , Y02E10/547 , Y02P70/521
Abstract: A multi-junction solar cell includes a silicon solar subcell, a GaInP solar subcell, and a GaAs solar subcell located between the silicon solar subcell and the GaInP solar subcell. The GaAs solar subcell is bonded to the silicon solar subcell such that a bonded interface exists between these subcells.
Abstract translation: 多结太阳能电池包括硅太阳能子电池，GaInP太阳能子电池和位于硅太阳能子电池和GaInP太阳能子电池之间的GaAs太阳能子电池。 GaAs太阳能子电池结合到硅太阳能子电池，使得在这些子电池之间存在键合界面。
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