公开(公告)号：WO2010011842A3

公开(公告)日：2010-03-18

申请号：PCT/US2009051546

申请日：2009-07-23

Applicant: AMBER WAVE SYSTEMS CORP ,  PINNINGTON THOMAS HENRY ,  ZAHLER JAMES M ,  PARK YOUNG-BAE ,  LADOUS CORINNE ,  OLSON SEAN

Inventor： PINNINGTON THOMAS HENRY ,  ZAHLER JAMES M ,  PARK YOUNG-BAE ,  LADOUS CORINNE ,  OLSON SEAN

IPC: H01L21/762

CPC classification number: H01L21/0254 ,  H01L21/02389 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

Abstract: In a first embodiment, a method comprises: patterning a source substrate; forming a weak interface in the source substrate; bonding the source substrate to a handle substrate; and exfoliating a thin layer from the source substrate such that the thin layer remains bonded to the handle substrate; wherein the thin layer comprises a pattern corresponding to the patterning of the source substrate. In a second embodiment, a method comprises : forming a weak interface in a source substrate; bonding the source substrate to the handle substrate; exfoliating a thin layer from the source substrate such that the thin layer remains bonded to the handle substrate; capping the thin layer bonded to the handle substrate; and after capping the thin layer, annealing the thin layer.

Abstract translation: 在第一实施例中，一种方法包括：对源极基板进行构图; 在源极衬底中形成弱界面; 将源极基板接合到手柄基板; 以及从所述源基底剥离薄层，使得所述薄层保持结合到所述手柄基板; 其中所述薄层包括对应于所述源极衬底的图案化的图案。 在第二实施例中，一种方法包括：在源极基底中形成弱界面; 将源极基板接合到手柄基板; 从源基板剥离薄层，使得薄层保持结合到手柄基板; 封盖与手柄基板结合的薄层; 并且在覆盖薄层之后，退火薄层。

公开(公告)号：WO2006116030A3

公开(公告)日：2006-11-02

申请号：PCT/US2006/015003

申请日：2006-04-21

Applicant: AONEX TECHNOLOGIES, INC. ,  PINNINGTON, Thomas, Henry ,  ZAHLER, James, M. ,  PARK, Young-bae ,  TSAI, Charles ,  LADOUS, Corinne ,  ATWATER, Harry, JR., A. ,  OLSON, Sean

Inventor： PINNINGTON, Thomas, Henry ,  ZAHLER, James, M. ,  PARK, Young-bae ,  TSAI, Charles ,  LADOUS, Corinne ,  ATWATER, Harry, JR., A. ,  OLSON, Sean

IPC: H01L29/06

Abstract: An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a Ill-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, while the thin layer may be a sapphire layer. A method of making the intermediate substrate includes forming a weak interface in the source substrate, bonding the source substrate to the handle substrate, and exfoliating the thin layer from the source substrate such that the thin layer remains bonded to the handle substrate.

公开(公告)号：WO2007019277A2

公开(公告)日：2007-02-15

申请号：PCT/US2006/030374

申请日：2006-08-02

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY ,  MORRAL, Anna, Fontcuberta i ,  ZAHLER, James, M. ,  LADOUS, Corinne ,  ATWATER, Harry, A. ,  OLSON, Sean, M.

Inventor： MORRAL, Anna, Fontcuberta i ,  ZAHLER, James, M. ,  LADOUS, Corinne ,  ATWATER, Harry, A. ,  OLSON, Sean, M.

IPC: H01L21/30

CPC classification number: H01L21/76254 ,  H01L21/26506

Abstract: A method of making a semiconductor thin film bonded to a handle substrate includes implanting a semiconductor substrate with a light ion species while cooling the semiconductor substrate, bonding the implanted semiconductor substrate to the handle substrate to form a bonded structure, and annealing the bonded structure, such that the semiconductor thin film is transferred from the semiconductor substrate to the handle substrate.

Abstract translation: 制造结合到手柄基板上的半导体薄膜的方法包括：在半导体衬底冷却时注入具有轻离子物质的半导体衬底，将注入的半导体衬底接合到手柄衬底上以形成结合结构，并对结合结构进行退火， 使得半导体薄膜从半导体衬底转移到手柄衬底。

公开(公告)号：WO2006116030A2

公开(公告)日：2006-11-02

申请号：PCT/US2006015003

申请日：2006-04-21

Applicant: AONEX TECHNOLOGIES INC ,  PINNINGTON THOMAS HENRY ,  ZAHLER JAMES M ,  PARK YOUNG-BAE ,  TSAI CHARLES ,  LADOUS CORINNE ,  ATWATER HARRY JR A ,  OLSON SEAN

Inventor： PINNINGTON THOMAS HENRY ,  ZAHLER JAMES M ,  PARK YOUNG-BAE ,  TSAI CHARLES ,  LADOUS CORINNE ,  ATWATER HARRY JR A ,  OLSON SEAN

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40

CPC classification number: H01L33/0079 ,  B82Y20/00 ,  H01L21/2007 ,  H01L33/145 ,  H01L33/32 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a Ill-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, while the thin layer may be a sapphire layer. A method of making the intermediate substrate includes forming a weak interface in the source substrate, bonding the source substrate to the handle substrate, and exfoliating the thin layer from the source substrate such that the thin layer remains bonded to the handle substrate.

Abstract translation: 中间基板包括结合到适合于诸如III族氮化物半导体层的化合物半导体层的外延生长的薄层的手柄基板。 手柄基板可以是金属或金属合金基板，例如钼或钼合金基板，而薄层可以是蓝宝石层。 制造中间基板的方法包括在源极基板中形成弱界面，将源极基板接合到手柄基板，以及将薄层从源极基板剥离，使得薄层保持结合到手柄基板上。

公开(公告)号：WO2010011842A2

公开(公告)日：2010-01-28

申请号：PCT/US2009/051546

申请日：2009-07-23

Applicant: AMBER WAVE SYSTEMS CORPORATION ,  PINNINGTON, Thomas, Henry ,  ZAHLER, James, M. ,  PARK, Young-Bae ,  LADOUS, Corinne ,  OLSON, Sean

Inventor： PINNINGTON, Thomas, Henry ,  ZAHLER, James, M. ,  PARK, Young-Bae ,  LADOUS, Corinne ,  OLSON, Sean

IPC: H01L21/762

CPC classification number: H01L21/0254 ,  H01L21/02389 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

Abstract: A method includes growing a first epitaxial layer of Ill-nitride material, forming a damaged region by implanting ions into an exposed surface of the first epitaxial layer, and growing a second epitaxial layer of Ill-nitride material on the exposed surface of the first epitaxial layer. A level of defects present in the second epitaxial layer is less than a level of defects present in the first epitaxial layer.

Abstract translation: 一种方法包括生长第一外延层的III族氮化物材料，通过将离子注入到第一外延层的暴露表面中形成损伤区域，以及在第一外延层的暴露表面上生长第二外延层的III族氮化物材料 层。 存在于第二外延层中的缺陷水平小于存在于第一外延层中的缺陷水平。

公开(公告)号：WO2009152146A1

公开(公告)日：2009-12-17

申请号：PCT/US2009/046738

申请日：2009-06-09

Applicant: UNIDYM, INC. ,  PARK, Youngbae ,  HU, Liangbing ,  LADOUS, Corinne ,  HUANG, Ting ,  IRVIN, Glen ,  DRZAIC, Paul

Inventor： PARK, Youngbae ,  HU, Liangbing ,  LADOUS, Corinne ,  HUANG, Ting ,  IRVIN, Glen ,  DRZAIC, Paul

IPC: H01L31/0224 ,  H01L51/00 ,  H01L51/44 ,  H01L33/00

CPC classification number: H01L51/0021 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/444 ,  Y02E10/549

Abstract: We disclose a method for making an optically transparent, electrically conductive nanostructure film, comprising coating a dispersion or a solution comprising a nanostructure selected from the group consisting of carbon nanotubes, fullerenes, graphene flakes/sheets, nanowires, and two or more thereof on a substrate. The film may also comprise a dopant in the dispersion or solution, as well as an encapsulant or topcoat.

Abstract translation: 我们公开了一种制造光学透明的导电纳米结构膜的方法，其包括将包含选自碳纳米管，富勒烯，石墨烯薄片/片，纳米线及其中的两种或更多种的纳米结构的分散体或溶液涂布在 基质。 该膜还可以在分散体或溶液中包含掺杂剂，以及密封剂或面漆。

公开(公告)号：WO2007019277A3

公开(公告)日：2007-07-12

申请号：PCT/US2006030374

申请日：2006-08-02

Applicant: CALIFORNIA INST OF TECHN ,  MORRAL ANNA FONTCUBERTA I ,  ZAHLER JAMES M ,  LADOUS CORINNE ,  ATWATER HARRY A ,  OLSON SEAN M

Inventor： MORRAL ANNA FONTCUBERTA I ,  ZAHLER JAMES M ,  LADOUS CORINNE ,  ATWATER HARRY A ,  OLSON SEAN M

IPC: H01L21/30

CPC classification number: H01L21/76254 ,  H01L21/26506

Abstract: A method of making a semiconductor thin film bonded to a handle substrate includes implanting a semiconductor substrate with a light ion species while cooling the semiconductor substrate, bonding the implanted semiconductor substrate to the handle substrate to form a bonded structure, and annealing the bonded structure, such that the semiconductor thin film is transferred from the semiconductor substrate to the handle substrate.

Abstract translation: 一种制造结合到处理基板的半导体薄膜的方法包括：在冷却半导体基板的同时注入具有轻离子种类的半导体基板;将注入的半导体基板结合到处理基板以形成结合结构;以及对结合结构进行退火， 使得半导体薄膜从半导体衬底转移到处理衬底。