公开(公告)号：WO2006104876A3

公开(公告)日：2007-04-05

申请号：PCT/US2006010752

申请日：2006-03-24

Applicant: HEADWAY TECHNOLOGIES INC ,  APPLIED SPINTRONICS INC ,  YANG HSU KAI ,  WANG PO-KANG ,  SHI XIZENG

Inventor： YANG HSU KAI ,  WANG PO-KANG ,  SHI XIZENG

IPC: G11C11/00 ,  G11C7/00

CPC classification number: G11C8/14 ,  G11C11/15

Abstract: In an MRAM array based on MTJs, the size of segmented word line selec transistors (38) and their associated connections become a significant overhead, especially when the operating point is chosen deep along the hard axis of the asteroid curve. This problem has been overcome by placing the big segmented word line select transistor (38) under the MTJ array and reducing the overall MRAM cell array (MTJ) down to a level comparable to a simple Cross Point MRAM array (MTJ).

Abstract translation: 在基于MTJ的MRAM阵列中，分段字线选择晶体管（38）及其相关连接的大小变得显着的开销，特别是当沿着小行星曲线的硬轴选择工作点时。 通过将大分段字线选择晶体管（38）放置在MTJ阵列之下并将整个MRAM单元阵列（MTJ）降低到与简单的交叉点MRAM阵列（MTJ）相当的水平，已经克服了这个问题。

公开(公告)号：WO2006113093A2

公开(公告)日：2006-10-26

申请号：PCT/US2006/011963

申请日：2006-03-30

Applicant: HEADWAY TECHNOLOGIES, INC. ,  APPLIED SPINTRONICS, INC. ,  WANG, Po-Kang ,  RONG, Yin ,  YANG, Hsu, Kai ,  SHI, Xizeng

Inventor： WANG, Po-Kang ,  RONG, Yin ,  YANG, Hsu, Kai ,  SHI, Xizeng

IPC: G11C11/00

CPC classification number: G11C8/08 ,  G11C11/15

Abstract: The word line segment select transistor of a segmented word line array is placed on the word line current source side. This eliminates many undesirable effects currently associated with segmented word line MRAM arrays.

Abstract translation: 分段字线阵列的字线选择晶体管被放置在字线电流源侧。 这消除了目前与分段字线MRAM阵列相关联的许多不期望的影响。

公开(公告)号：WO2006104876A2

公开(公告)日：2006-10-05

申请号：PCT/US2006/010752

申请日：2006-03-24

Applicant: HEADWAY TECHNOLOGIES, INC. ,  APPLIED SPINTRONICS, INC. ,  YANG, Hsu, Kai ,  WANG, Po-kang ,  SHI, Xizeng

Inventor： YANG, Hsu, Kai ,  WANG, Po-kang ,  SHI, Xizeng

IPC: G11C11/00

CPC classification number: G11C8/14 ,  G11C11/15

Abstract: In an MRAM array based on MTJs, the size of segmented word line select transistors and their associated connections become a significant overhead, espe¬ cially when the operating point is chosen deep along the hard axis of the asteroid curve. This problem has been overcome by placing the big segmented word line select transistors under the MTJ array and reducing the overall MRAM cell array down to a level comparable to a simple Cross Point MRAM array.

Abstract translation: 在基于MTJ的MRAM阵列中，分段字线选择晶体管及其相关连接的大小成为显着的开销，特别是当沿着小行星曲线的硬轴选择工作点时。 通过将大分段字线选择晶体管放置在MTJ阵列下并将整个MRAM单元阵列降低到与简单的交叉点MRAM阵列相当的水平，已经克服了这个问题。

公开(公告)号：WO2006113093A3

公开(公告)日：2007-01-11

申请号：PCT/US2006011963

申请日：2006-03-30

Applicant: HEADWAY TECHNOLOGIES INC ,  APPLIED SPINTRONICS INC ,  WANG PO-KANG ,  RONG YIN ,  YANG HSU KAI ,  SHI XIZENG

Inventor： WANG PO-KANG ,  RONG YIN ,  YANG HSU KAI ,  SHI XIZENG

IPC: G11C11/00

CPC classification number: G11C8/08 ,  G11C11/15

Abstract: The word line segment select transistor (15) of a segmented word line array (11, 12) is placed on the word line current source side (14). This eliminates many undesirable effects effects currently associated with segmented word line MRAM arrays (18).

Abstract translation: 分割字线阵列（11,12）的字线选择晶体管（15）被放置在字线电流源侧（14）上。 这消除了当前与分段字线MRAM阵列（18）相关联的许多不期望的效果效果。