Abstract:
A light-emitting device (LED) includes a first semiconductor layer comprising of n-type dope materials. A second semiconductor layer includes p-type dope materials. An active region is positioned between the first and second semiconductor layers. The active region includes Si self-interstitials used in producing electroluminescence having emissions at wavelengths approximately 1.218 µm.
Abstract:
Methods for fabricating nanostructures and articles associated therewith are described. In some embodiments, an isolated nanostructure (e.g., a metal nanowire) or an array of nanostructures can be fabricated by depositing a material (e.g., a metal) on a surface having a plurality of protrusions or indentations. At least a portion of the deposited material may be embedded in an encapsulating material, and the encapsulating material can be cut, for instance, to form a thin slice that includes the deposited material at least partially embedded therein. In some instances, the slice can be positioned on a surface in a desired arrangement. The encapsulating material can be removed from the surface to form one or more isolated nanostructures of the deposited material. Advantageously, dimensions of the nanostructures can be controlled to, e.g., 15 run, to form nanostructures having a variety of shapes and geometries (e.g., wires, rings, and cylinders). Nanostructures can also be formed in a variety of materials, including metals, ceramics, and polymers. In addition, nanostructures can also be fabricated over large areas (e.g., greater than 1 mm 2 ). In some cases, these nanostructures are positioned in association with other components, e.g., to form a functional component of a device.
Abstract:
Methods for fabricating nanostructures and articles associated therewith are described. In some embodiments, an isolated nanostructure (e.g., a metal nanowire) or an array of nanostructures can be fabricated by depositing a material (e.g., a metal) on a surface having a plurality of protrusions or indentations. At least a portion of the deposited material may be embedded in an encapsulating material, and the encapsulating material can be cut, for instance, to form a thin slice that includes the deposited material at least partially embedded therein. In some instances, the slice can be positioned on a surface in a desired arrangement. The encapsulating material can be removed from the surface to form one or more isolated nanostructures of the deposited material. Advantageously, dimensions of the nanostructures can be controlled to, e.g., 15 run, to form nanostructures having a variety of shapes and geometries (e.g., wires, rings, and cylinders). Nanostructures can also be formed in a variety of materials, including metals, ceramics, and polymers. In addition, nanostructures can also be fabricated over large areas (e.g., greater than 1 mm 2 ). In some cases, these nanostructures are positioned in association with other components, e.g., to form a functional component of a device.
Abstract:
A light-emitting device (LED) includes a first semiconductor layer comprising of n-type dope materials. A second semiconductor layer includes p-type dope materials. An active region is positioned between the first and second semiconductor layers. The active region includes Si self-interstitials used in producing electroluminescence having emissions at wavelengths approximately 1.218 μm.