公开(公告)号：WO2008063985A2

公开(公告)日：2008-05-29

申请号：PCT/US2007/084494

申请日：2007-11-13

Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE ,  BAO, Jiming ,  TABBAL, Malek ,  AZIZ, Michael, J. ,  KIM, Taegon ,  CHARNVANICHBORIKARN, Supakit ,  WILLIAMS, James, S. ,  CAPASSO, Federico

Inventor： BAO, Jiming ,  TABBAL, Malek ,  AZIZ, Michael, J. ,  KIM, Taegon ,  CHARNVANICHBORIKARN, Supakit ,  WILLIAMS, James, S. ,  CAPASSO, Federico

IPC: H01L33/00

CPC classification number: H01L33/34

Abstract: A light-emitting device (LED) includes a first semiconductor layer comprising of n-type dope materials. A second semiconductor layer includes p-type dope materials. An active region is positioned between the first and second semiconductor layers. The active region includes Si self-interstitials used in producing electroluminescence having emissions at wavelengths approximately 1.218 μm.

Abstract translation: 发光器件（LED）包括由n-型掺杂材料构成的第一半导体层。 第二半导体层包括p型掺杂材料。 有源区位于第一和第二半导体层之间。 有源区包括用于产生具有大约1.218μm波长发射的电致发光的Si自填隙。

公开(公告)号：WO2008063985A3

公开(公告)日：2008-08-21

申请号：PCT/US2007084494

申请日：2007-11-13

Applicant: HARVARD COLLEGE ,  BAO JIMING ,  TABBAL MALEK ,  AZIZ MICHAEL J ,  KIM TAEGON ,  CHARNVANICHBORIKARN SUPAKIT ,  WILLIAMS JAMES S ,  CAPASSO FEDERICO

Inventor： BAO JIMING ,  TABBAL MALEK ,  AZIZ MICHAEL J ,  KIM TAEGON ,  CHARNVANICHBORIKARN SUPAKIT ,  WILLIAMS JAMES S ,  CAPASSO FEDERICO

IPC: H01L27/15 ,  H01L33/34

CPC classification number: H01L33/34

Abstract: A light-emitting device (LED) includes a first semiconductor layer comprising of n-type dope materials. A second semiconductor layer includes p-type dope materials. An active region is positioned between the first and second semiconductor layers. The active region includes Si self-interstitials used in producing electroluminescence having emissions at wavelengths approximately 1.218 µm.

Abstract translation: 发光器件（LED）包括由n型掺杂材料构成的第一半导体层。 第二半导体层包括p型掺杂材料。 有源区位于第一和第二半导体层之间。 有源区包括用于制造具有大约1.218μm波长的发射的电致发光的Si自间隙。