公开(公告)号：WO2003096765A3

公开(公告)日：2003-11-20

申请号：PCT/US2003/013597

申请日：2003-05-01

Applicant: LAM RESEARCH CORPORATION ,  HOWALD, Arthur, M. ,  KUTHI, Andras ,  BAILEY, Andrew, D., III ,  BERNEY, Butch

Inventor： HOWALD, Arthur, M. ,  KUTHI, Andras ,  BAILEY, Andrew, D., III ,  BERNEY, Butch

IPC: H01J37/32

Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component (602) having a plasma-facing surface oriented toward plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement (600) coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit (610) disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement (604, 610) disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

公开(公告)号：WO03096765A2

公开(公告)日：2003-11-20

申请号：PCT/US0313597

申请日：2003-05-01

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III ,  BERNEY BUTCH

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III ,  BERNEY BUTCH

IPC: H05H1/46 ,  C23C16/00 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/306 ,  H01L21/3065 ,  H05H1/00

CPC classification number: H01J37/32477 ,  H01J37/32623

Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

Abstract translation: 公开了一种用于处理基板以在其上形成电子部件的等离子体处理室。 等离子体处理室包括在处理基板期间在等离子体处理室中具有朝向等离子体的等离子体面向表面的等离子体面向部件，等离子体面向部件与接地端子电隔离。 等离子体处理室还包括耦合到等离子体面向部件的接地装置，接地装置包括设置在等离子体面向部件和接地端子之间的第一电流路径中的第一电阻电路。 接地装置还包括设置在等离子体面向部件和接地端子之间的至少一个其它电流通路中的RF滤波器装置，其中选择第一电阻电路的电阻值以基本上消除等离子体和等离子体 - 在处理基板期间面对部件。

公开(公告)号：WO1998000576A1

公开(公告)日：1998-01-08

申请号：PCT/US1997009028

申请日：1997-06-02

Applicant: LAM RESEARCH CORPORATION ,  MCMILLIN, Brian ,  NGUYEN, Huong ,  BARNES, Michael ,  BERNEY, Butch

Inventor： LAM RESEARCH CORPORATION

IPC: C23C16/50

CPC classification number: C23C16/45565 ,  C23C16/455 ,  C23C16/45572 ,  C23C16/45578 ,  C23C16/507 ,  C30B25/105 ,  C30B25/14 ,  H01J37/321 ,  H01J37/3244

Abstract: A plasma processing system for processes such as chemical vapor deposition includes a plasma processing chamber (140), a substrate holder (130) for supporting a substrate (120) within the processing chamber, a dielectric member (155) having an interior surface facing the substrate holder, the dielectric member forming a wall of the processing chamber, a gas supply for supplying gas to the chamber, directed towards the substrate, and an RF energy source such as a planar coil (150) which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas supply may comprise a primary gas ring (170) and a secondary gas ring (160) for supplying gases or gas mixtures into the chamber. The gas supply may further include injectors (180) attached to the primary gas ring which inject gas into the chamber, directed towards the substrate. The plasma processing system may also include a cooling mechanism for cooling the primary gas ring during processing.

Abstract translation: 用于诸如化学气相沉积的工艺的等离子体处理系统包括等离子体处理室（140），用于在处理室内支撑衬底（120）的衬底保持器（130），电介质构件（155），其内表面面向 衬底保持器，形成处理室的壁的电介质构件，用于向腔室提供气体的气体供应源，指向衬底;以及RF能量源，例如平面线圈（150），其将RF能量感应耦合通过电介质 成员进入室，以使工艺气体进入等离子体状态。 气体供应可以包括用于将气体或气体混合物供应到室中的主气体环（170）和二次气体环（160）。 气体供应还可以包括连接到主气体环的喷射器（180），其将气体注入到腔室中，指向衬底。 等离子体处理系统还可以包括用于在处理期间冷却主气环的冷却机构。