公开(公告)号：WO2008109204A3

公开(公告)日：2008-09-12

申请号：PCT/US2008/052281

申请日：2008-01-29

Applicant: YU, Zhen ,  BURKE, Peter J. ,  MCKERNAN, Steffen ,  WANG, Dawei

Inventor： YU, Zhen ,  BURKE, Peter J. ,  MCKERNAN, Steffen ,  WANG, Dawei

IPC: H01L21/336

Abstract: A multifinger carbon nanotube field-effect transistor (CNT FET) is provided in which a plurality of nanotube top gated FETs are combined in a finger geometry along the length of a single carbon nanotube, an aligned array of nanotubes, or a random array of nanotubes. Each of the individual FETs are arranged such that there is no geometrical overlap between the gate and drain finger electrodes over the single carbon nanotube so as to minimize the Miller capacitance (Cgd) between the gate and drain finger electrodes. A low-K dielectric may be used to separate the source and gate electrodes in the multifinger CNT FET so as to further minimize the Miller capacitance between the source and gate electrodes.

公开(公告)号：WO2007011365A2

公开(公告)日：2007-01-25

申请号：PCT/US2005/028893

申请日：2005-08-12

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  BURKE, Peter, J.

Inventor： BURKE, Peter, J.

IPC: H04B1/38

CPC classification number: H01Q1/36 ,  B82Y99/00 ,  H01Q1/368 ,  H01Q3/2676 ,  H04B1/38 ,  Y10S977/75 ,  Y10S977/752 ,  Y10S977/762 ,  Y10T29/49016

Abstract: Communication to or from a nanodevice is provided with a nanostructure-based antenna, preferably formed from, but not limited to, a single wall nanotube (SWNT). Other nanostructure-based antennas include double walled nanotubes, semiconducting nanowires, metal nanowires and the like. The use of a nanostructure-based antenna eliminates the need to provide a physical communicative connection to the nanodevice, while at the same time allowing communication between the nanodevice and other nanodevices or outside systems, i.e., systems larger than nanoscale such as those formed from semiconductor fabrication processes such as CMOS, GaAs, bipolar processes and the like.

Abstract translation: 与纳米器件的通信提供有基于纳米结构的天线，优选由但不限于单壁纳米管（SWNT）形成。 其他基于纳米结构的天线包括双壁纳米管，半导体纳米线，金属纳米线等。 使用基于纳米结构的天线消除了提供与纳米设备的物理通信连接的需要，同时允许纳米器件和其他纳米器件或外部系统之间的通信，即大于纳米级的系统，例如由半导体形成的纳米尺度 制造工艺如CMOS，GaAs，双极工艺等。

公开(公告)号：WO2008109203A3

公开(公告)日：2009-04-16

申请号：PCT/US2008052277

申请日：2008-01-29

Applicant: BURKE PETER J ,  MCKERNAN STEFFEN ,  WANG DAWEI ,  YU ZHEN

Inventor： BURKE PETER J ,  MCKERNAN STEFFEN ,  WANG DAWEI ,  YU ZHEN

IPC: B82B1/00 ,  C01B31/02 ,  H01L29/06

CPC classification number: H01L51/0048 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L51/0554

Abstract: A method and device are provided for the RF characterization of nanostructures and high impedance devices. A two-terminal electronic nanostructure device is fabricated by dividing a length of a nanostructure into a plurality of shorter, identical nanostructures using a plurality of finger electrodes electrically connected in parallel. The nanostructure may include a single walled carbon nanotube subdivided into shorter identical copies of a metallic nanotube segment by situating multiple finger electrodes along the length of the single walled carbon nanotube. Each of the subdivided shorter nanotube segments are connected in parallel. This arrangement allows for close impedance matching to radio frequency (RF) systems, and serves as an important technique in understanding and characterizing metallic (and even semiconducting) nanotubes at RF and microwave frequencies.

Abstract translation: 提供了用于纳米结构和高阻抗器件的RF表征的方法和装置。 使用并联电连接的多个指状电极，将纳米结构的长度分成多个较短的相同的纳米结构制造双端子电子纳米结构器件。 纳米结构可以包括单层碳纳米管，其通过沿着单壁碳纳米管的长度方向来定位多个指状电极，细分为金属纳米管段的较短的相同拷贝。 每个细分短的纳米管片段并联连接。 这种布置允许与射频（RF）系统的紧密阻抗匹配，并且用作在RF和微波频率上理解和表征金属（甚至半导体）纳米管的重要技术。

公开(公告)号：WO2009002588A3

公开(公告)日：2009-02-26

申请号：PCT/US2008060130

申请日：2008-04-11

Applicant: UNIV CALIFORNIA ,  BURKE PETER J ,  RUTHERGLEN CHRISTOPHER M

Inventor： BURKE PETER J ,  RUTHERGLEN CHRISTOPHER M

IPC: C08K3/04

CPC classification number: H03D1/08

Abstract: Described herein are systems and methods in which a carbon nanotube (CNT) is used as a demodulator of amplitude-modulated (AM) signals. Due to the nonlinear current-voltage (I-V) characteristics of a CNT, the CNT induces rectification of an applied RF signal enabling the CNT to function as a demodulator of an amplitude-modulated (AM) RF signal. By properly biasing the CNT such that the operating point is centered on the maximum portion of the I-V curve, the demodulation effect of the CNT can be maximized. The present invention is useful for possible nanoscale wireless communications systems, e.g., nanoscale radios.

Abstract translation: 这里描述了使用碳纳米管（CNT）作为幅度调制（AM）信号的解调器的系统和方法。 由于CNT的非线性电流 - 电压（I-V）特性，CNT引起施加的RF信号的整流，使CNT能够用作幅度调制（AM）RF信号的解调器。 通过适当地偏置CNT使得工作点以I-V曲线的最大部分为中心，可以使CNT的解调效果最大化。 本发明对于可能的纳米尺度无线通信系统是有用的，例如纳米级无线电。

公开(公告)号：WO2008109203A2

公开(公告)日：2008-09-12

申请号：PCT/US2008/052277

申请日：2008-01-29

Applicant: BURKE, Peter J. ,  MCKERNAN, Steffen ,  WANG, Dawei ,  YU, Zhen

Inventor： BURKE, Peter J. ,  MCKERNAN, Steffen ,  WANG, Dawei ,  YU, Zhen

CPC classification number: H01L51/0048 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L51/0554

Abstract: A method and device are provided for the RF characterization of nanostructures and high impedance devices. A two-terminal electronic nanostructure device is fabricated by dividing a length of a nanostructure into a plurality of shorter, identical nanostructures using a plurality of finger electrodes electrically connected in parallel. The nanostructure may include a single walled carbon nanotube subdivided into shorter identical copies of a metallic nanotube segment by situating multiple finger electrodes along the length of the single walled carbon nanotube. Each of the subdivided shorter nanotube segments are connected in parallel. This arrangement allows for close impedance matching to radio frequency (RF) systems, and serves as an important technique in understanding and characterizing metallic (and even semiconducting) nanotubes at RF and microwave frequencies.

Abstract translation: 提供了用于纳米结构和高阻抗器件的RF表征的方法和装置。 使用并联电连接的多个指状电极，将纳米结构的长度分成多个较短的相同的纳米结构制造双端子电子纳米结构器件。 纳米结构可以包括单层碳纳米管，其通过沿着单壁碳纳米管的长度方向来定位多个指状电极，细分为金属纳米管段的较短的相同拷贝。 每个细分短的纳米管片段并联连接。 这种布置允许与射频（RF）系统的紧密阻抗匹配，并且用作在RF和微波频率上理解和表征金属（甚至半导体）纳米管的重要技术。

公开(公告)号：WO2008094888A1

公开(公告)日：2008-08-07

申请号：PCT/US2008/052273

申请日：2008-01-29

Applicant: MCKERNAN, Steffen ,  BURKE, Peter J.

Inventor： MCKERNAN, Steffen ,  BURKE, Peter J.

IPC: H01L21/20 ,  B82B1/00

CPC classification number: H01L21/823807 ,  H01L27/092

Abstract: A method is provided for preparing a nanotube coated wafer with electrical contacts and a dielectric that is compatible with follow-on industry standard CMOS processing steps. In one or more embodiments of the present disclosure, a process is provided for fabricating CNT FET devices comprising providing nanotube coated wafers for subsequent CMOS processing steps (e.g., by providing the nanotube coated wafer to a semiconductor foundry) that (1 ) are fully compatible with existing semiconductor foundry equipment, (2) provide protection for the nanotubes already in place on the wafer from certain CMOS processing steps that could otherwise be damaging (e.g., pre-processing cleaning steps in CMOS), and (3) do not expose existing semiconductor processing equipment to any new materials, i.e. all exposed materials are industry standard to CMOS processing and well-characterized.

Abstract translation: 提供了一种用于制备具有电接触的纳米管涂覆的晶片和与随后的工业标准CMOS处理步骤兼容的电介质的方法。 在本公开的一个或多个实施例中，提供了一种用于制造CNT FET器件的工艺，其包括提供用于随后的CMOS处理步骤的纳米管涂覆的晶片（例如，通过向半导体铸造厂提供纳米管涂覆的晶片），（1）完全兼容 使用现有的半导体铸造设备，（2）通过某些CMOS处理步骤（例如，CMOS中的预处理清洁步骤），可以对已经在晶片上已经存在的纳米管提供保护，以及（3）不暴露现有的 半导体加工设备对任何新材料，即所有暴露的材料都是工业标准的CMOS加工和良好表征。

公开(公告)号：WO2008060673A3

公开(公告)日：2008-09-18

申请号：PCT/US2007067823

申请日：2007-04-30

Applicant: UNIV CALIFORNIA ,  BURKE PETER J ,  YU ZHEN

Inventor： BURKE PETER J ,  YU ZHEN

IPC: B29C65/00 ,  H01J1/00

CPC classification number: B82Y40/00 ,  B82Y30/00 ,  C01B32/16 ,  C01B32/168 ,  C01B2202/02 ,  C01B2202/34 ,  C01B2202/36

Abstract: An improved method of synthesizing nanotubes that avoids the slow process and the impurities or defects that are usually encountered with regard to as-grown carbon nanotubes. In a preferred embodiment, nanotubes are synthesized from nanotubes providing a novel catalyst-free growth method for direct growth of single- or multi-walled, metallic or semiconducting nanotubes.

Abstract translation: 一种合成纳米管的改进方法，其避免了慢生成方法以及通常在生长的碳纳米管方面遇到的杂质或缺陷。 在优选的实施方案中，从纳米管合成纳米管，提供用于直接生长单层或多壁金属或半导体纳米管的新型无催化剂生长方法。

公开(公告)号：WO2008060673A2

公开(公告)日：2008-05-22

申请号：PCT/US2007/067823

申请日：2007-04-30

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  BURKE, Peter J. ,  YU, Zhen

Inventor： BURKE, Peter J. ,  YU, Zhen

IPC: H01L51/00

CPC classification number: B82Y40/00 ,  B82Y30/00 ,  C01B32/16 ,  C01B32/168 ,  C01B2202/02 ,  C01B2202/34 ,  C01B2202/36

Abstract: An improved method of synthesizing nanotubes that avoids the slow process and the impurities or defects that are usually encountered with regard to as-grown carbon nanotubes. In a preferred embodiment, nanotubes are synthesized from nanotubes providing a novel catalyst-free growth method for direct growth of single- or multi-walled, metallic or semiconducting nanotubes.

Abstract translation: 合成纳米管的改进方法避免了缓慢的过程和通常遇到的关于生长的碳纳米管的杂质或缺陷。 在一个优选的实施方案中，纳米管由纳米管合成，为单壁或多壁金属或半导体纳米管的直接生长提供了新的无催化剂生长方法。

公开(公告)号：WO2009002588A2

公开(公告)日：2008-12-31

申请号：PCT/US2008/060130

申请日：2008-04-11

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  BURKE, Peter, J. ,  RUTHERGLEN, Christopher, M.

Inventor： BURKE, Peter, J. ,  RUTHERGLEN, Christopher, M.

IPC: H03D1/18

CPC classification number: H03D1/08

Abstract: Described herein are systems and methods in which a carbon nanotube (CNT) is used as a demodulator of amplitude-modulated (AM) signals. Due to the nonlinear current-voltage (I-V) characteristics of a CNT, the CNT induces rectification of an applied RF signal enabling the CNT to function as a demodulator of an amplitude-modulated (AM) RF signal. By properly biasing the CNT such that the operating point is centered on the maximum portion of the I-V curve, the demodulation effect of the CNT can be maximized. The present invention is useful for possible nanoscale wireless communications systems, e.g., nanoscale radios.

Abstract translation: 这里描述了使用碳纳米管（CNT）作为幅度调制（AM）信号的解调器的系统和方法。 由于CNT的非线性电流 - 电压（I-V）特性，CNT引起施加的RF信号的整流，使CNT能够用作幅度调制（AM）RF信号的解调器。 通过适当地偏置CNT使得工作点以I-V曲线的最大部分为中心，可以使CNT的解调效果最大化。 本发明对于可能的纳米尺度无线通信系统是有用的，例如纳米级无线电。

公开(公告)号：WO2008109204A2

公开(公告)日：2008-09-12

申请号：PCT/US2008052281

申请日：2008-01-29

Applicant: YU ZHEN ,  BURKE PETER J ,  MCKERNAN STEFFEN ,  WANG DAWEI

Inventor： YU ZHEN ,  BURKE PETER J ,  MCKERNAN STEFFEN ,  WANG DAWEI

CPC classification number: H01L27/285 ,  B82Y10/00 ,  H01L27/283 ,  H01L51/0048 ,  H01L51/0508

Abstract: A multifinger carbon nanotube field-effect transistor (CNT FET) is provided in which a plurality of nanotube top gated FETs are combined in a finger geometry along the length of a single carbon nanotube, an aligned array of nanotubes, or a random array of nanotubes. Each of the individual FETs are arranged such that there is no geometrical overlap between the gate and drain finger electrodes over the single carbon nanotube so as to minimize the Miller capacitance (Cgd) between the gate and drain finger electrodes. A low-K dielectric may be used to separate the source and gate electrodes in the multifinger CNT FET so as to further minimize the Miller capacitance between the source and gate electrodes.

Abstract translation: 提供了一种多画面碳纳米管场效应晶体管（CNT FET），其中多个纳米管顶部门控FET沿着单个碳纳米管的长度组合成手指几何形状，排列的纳米管阵列或纳米管的随机阵列 。 每个单独的FET被布置成使得在单个碳纳米管之间的栅极和漏极指状电极之间不存在几何重叠，从而最小化栅极和漏极指状电极之间的米勒电容（Cgd）。 可以使用低K电介质来分离多边形CNT FET中的源电极和栅电极，以进一步最小化源极和栅电极之间的米勒电容。