公开(公告)号：WO2007021521A3

公开(公告)日：2007-05-03

申请号：PCT/US2006029763

申请日：2006-07-28

Applicant: APPLIED MATERIALS INC ,  LU SIQING ,  LIANG QIWEI ,  LAI CANFENG ,  CHEN ROBERT T ,  BLOKING JASON T ,  CHOU IRENE ,  KIM STEVEN H ,  LEE YOUNG S ,  YIEH ELLIE Y

Inventor： LU SIQING ,  LIANG QIWEI ,  LAI CANFENG ,  CHEN ROBERT T ,  BLOKING JASON T ,  CHOU IRENE ,  KIM STEVEN H ,  LEE YOUNG S ,  YIEH ELLIE Y

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/321 ,  H01J37/32431 ,  H01J37/32458

Abstract: A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall (412) and a dome (432, 436) positioned above the sidewall. The dome has physically separated and noncontiguous pieces (432, 43S). The gas-delivery system introduces e a gas into the process chamber through side nozzles (414, 416) positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system (420, 424) is operatively coupled with the process chamber. The substrate holder (408) is disposed within the process chamber and supports a substrate (404) during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

Abstract translation: 衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。 壳体包括位于侧壁上方的侧壁（412）和圆顶（432,436）。 圆顶具有物理分离和不连续的部件（432,43S）。 气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴（414,416）将气体引入处理室。 高密度等离子体产生系统（420,424）与处理室可操作地耦合。 衬底保持器（408）设置在处理室内并在衬底处理期间支撑衬底（404）。 控制器控制气体输送系统和高密度等离子体发生系统。

公开(公告)号：WO2007021521A2

公开(公告)日：2007-02-22

申请号：PCT/US2006/029763

申请日：2006-07-28

Applicant: APPLIED MATERIALS, INC. ,  LU, Siqing ,  LIANG, Qiwei ,  LAI, Canfeng ,  CHEN, Robert, T. ,  BLOKING, Jason, T. ,  CHOU, Irene ,  KIM, Steven, H. ,  LEE, Young, S. ,  YIEH, Ellie, Y.

Inventor： LU, Siqing ,  LIANG, Qiwei ,  LAI, Canfeng ,  CHEN, Robert, T. ,  BLOKING, Jason, T. ,  CHOU, Irene ,  KIM, Steven, H. ,  LEE, Young, S. ,  YIEH, Ellie, Y.

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/321 ,  H01J37/32431 ,  H01J37/32458

Abstract: A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

Abstract translation: 衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。 壳体包括侧壁和位于侧壁上方的圆顶。 圆顶具有物理分离和不连续的部分。 气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。 高密度等离子体产生系统与处理室可操作地耦合。 衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。 控制器控制气体输送系统和高密度等离子体发生系统。