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    DIELECTRIC MATERIALS TO PREVENT PHOTORESIST POISONING
    4.
    发明申请
    DIELECTRIC MATERIALS TO PREVENT PHOTORESIST POISONING 审中-公开
    电介质材料，以防止光催化污染

    公开(公告)号：WO2004104698A2

    公开(公告)日：2004-12-02

    申请号：PCT/US2004/015531

    申请日：2004-05-18

    Applicant: APPLIED MATERIALS, INC. ,  NGUYEN, Son, Van ,  ARMACOST, Michael, D. ,  NAIK, Mehul ,  DIXIT, Girish, A. ,  YIEH, Ellie, Y.

    Inventor： NGUYEN, Son, Van ,  ARMACOST, Michael, D. ,  NAIK, Mehul ,  DIXIT, Girish, A. ,  YIEH, Ellie, Y.

    IPC: G03F

    CPC classification number: G03F7/091 ,  G03F7/11 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76835

    Abstract: Methods are provided for depositing a dielectric material for use as an anti-reflective coating and sacrificial dielectric material in damascene formation. In one aspect, a process is provided for processing a substrate including depositing an acidic dielectric layer on the substrate by reacting an oxygen-containing organosilicon compound and an acidic compound, depositing a photoresist material on the acidic dielectric layer, and patterning the photoresist layer. The acidic dielectric layer may be used as a sacrificial layer in forming a feature definition by etching a partial feature definition, depositing the acidic dielectric material, etching the remainder of the feature definition, and then removing the acidic dielectric material to form a feature definition.

    Abstract translation: 提供了用于沉积电介质材料的方法，用作抗镶嵌层中的抗反射涂层和牺牲电介质材料。 在一个方面，提供了一种处理衬底的方法，包括通过使含氧有机硅化合物和酸性化合物反应，在酸性电介质层上沉积光致抗蚀剂材料，并使光致抗蚀剂层图形化，在衬底上沉积酸性介电层。 通过蚀刻部分特征定义，沉积酸性电介质材料，蚀刻特征定义的其余部分，然后除去酸性介电材料以形成特征定义，酸性介电层可用作形成特征定义的牺牲层。

    A REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS
    6.
    发明申请
    A REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS 审中-公开
    具有循环高低压清洁步骤的远程等离子清洁工艺

    公开(公告)号：WO2010047953A3

    公开(公告)日：2010-06-17

    申请号：PCT/US2009059878

    申请日：2009-10-07

    Applicant: APPLIED MATERIALS INC ,  HUA ZHONG QIANG ,  KAMATH SANJAY ,  LEE YOUNG S ,  YIEH ELLIE Y ,  LE HIEN-MINH HUU ,  PATEL ANJANA M ,  GONDHALEKAR SUDHIR R

    Inventor： HUA ZHONG QIANG ,  KAMATH SANJAY ,  LEE YOUNG S ,  YIEH ELLIE Y ,  LE HIEN-MINH HUU ,  PATEL ANJANA M ,  GONDHALEKAR SUDHIR R

    IPC: H01L21/3065 ,  H01L21/205 ,  H01L21/302

    CPC classification number: B08B7/0035 ,  C23C16/4405

    Abstract: A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.

    Abstract translation: 一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不想要的沉积物。 在一个实施例中，将基板转移出基板处理室，并且将含氟蚀刻剂气体的流引入到其中形成反应性物质的远程等离子体源中。 产生从远程等离子体源到基板处理室的反应物质的连续流动，同时重复高低压清洁步骤的循环。 在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。 在低压清洁步骤期间，反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

    PROCESS SEQUENCE FOR FORMATION OF PATTERNED HARD MASK FILM (RFP) WITHOUT NEED FOR PHOTORESIST OR DRY ETCH
    7.
    发明申请
    PROCESS SEQUENCE FOR FORMATION OF PATTERNED HARD MASK FILM (RFP) WITHOUT NEED FOR PHOTORESIST OR DRY ETCH 审中-公开
    用于形成图形硬片（RFP）的过程序列，不需要用于光刻胶或干蚀刻

    公开(公告)号：WO2009105347A3

    公开(公告)日：2009-11-12

    申请号：PCT/US2009033250

    申请日：2009-02-05

    Applicant: APPLIED MATERIALS INC ,  NEMANI SRINIVAS D ,  VENKATARAMAN SHANKAR ,  YIEH ELLIE Y

    Inventor： NEMANI SRINIVAS D ,  VENKATARAMAN SHANKAR ,  YIEH ELLIE Y

    IPC: H01L21/027 ,  G03F7/00

    CPC classification number: G03F7/0757 ,  H01L21/02164 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31612 ,  H01L21/6719 ,  H01L21/67207

    Abstract: Method and systems for patterning a hardmask film using ultraviolet light is disclosed according to one embodiment of the invention. Embodiments of the present invention alleviate the processing problem of depositing and etching photoresist in order to produce a hardmask pattern. A hardmask layer, such as, silicon oxide, is first deposited on a substrate within a deposition chamber. In some cases, the hardmask layer is baked or annealed following deposition. After which, portions of the hardmask layer are exposed with ultraviolet light. The ultraviolet light produces a pattern of exposed and unexposed portions of hardmask material. Following the exposure, an etching process, such as a wet etch, may occur that removes the unexposed portions of the hardmask. Following the etch, the hardmask may be annealed, baked or subjected to a plasma treatment.

    Abstract translation: 根据本发明的一个实施方案公开了使用紫外光图案化硬掩膜的方法和系统。 本发明的实施例减轻了沉积和蚀刻光致抗蚀剂的加工问题，以便产生硬掩模图案。 首先将诸如氧化硅的硬掩模层沉积在沉积室内的衬底上。 在一些情况下，硬掩模层在沉积之后被烘烤或退火。 之后，硬掩模层的一部分用紫外线照射。 紫外光产生硬掩模材料的暴露和未曝光部分的图案。 曝光后，可能会发生腐蚀过程，例如湿蚀刻，从而去除硬掩模的未曝光部分。 在蚀刻之后，可以对硬掩模进行退火，烘烤或进行等离子体处理。

    PROCESS SEQUENCE FOR FORMATION OF PATTERNED HARD MASK FILM (RFP) WITHOUT NEED FOR PHOTORESIST OR DRY ETCH
    8.
    发明申请
    PROCESS SEQUENCE FOR FORMATION OF PATTERNED HARD MASK FILM (RFP) WITHOUT NEED FOR PHOTORESIST OR DRY ETCH 审中-公开
    用于形成图案化硬掩膜（RFP）的过程序列，而不需要光刻或干蚀刻

    公开(公告)号：WO2009105347A2

    公开(公告)日：2009-08-27

    申请号：PCT/US2009/033250

    申请日：2009-02-05

    Applicant: APPLIED MATERIALS, INC. ,  NEMANI, Srinivas, D. ,  VENKATARAMAN, Shankar ,  YIEH, Ellie, Y.

    Inventor： NEMANI, Srinivas, D. ,  VENKATARAMAN, Shankar ,  YIEH, Ellie, Y.

    IPC: H01L21/027 ,  G03F7/00

    CPC classification number: G03F7/0757 ,  H01L21/02164 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31612 ,  H01L21/6719 ,  H01L21/67207

    Abstract: Method and systems for patterning a hardmask film using ultraviolet light is disclosed according to one embodiment of the invention. Embodiments of the present invention alleviate the processing problem of depositing and etching photoresist in order to produce a hardmask pattern. A hardmask layer, such as, silicon oxide, is first deposited on a substrate within a deposition chamber. In some cases, the hardmask layer is baked or annealed following deposition. After which, portions of the hardmask layer are exposed with ultraviolet light. The ultraviolet light produces a pattern of exposed and unexposed portions of hardmask material. Following the exposure, an etching process, such as a wet etch, may occur that removes the unexposed portions of the hardmask. Following the etch, the hardmask may be annealed, baked or subjected to a plasma treatment.

    Abstract translation: 根据本发明的一个实施例公开了使用紫外光来图案化硬掩模膜的方法和系统。 本发明的实施例缓解了沉积和蚀刻光刻胶以产生硬掩模图案的处理问题。 首先将诸如氧化硅的硬掩模层沉积在沉积室内的基板上。 在一些情况下，硬掩模层在沉积之后被烘焙或退火。 之后，部分硬掩模层用紫外光曝光。 紫外光产生硬掩模材料的暴露部分和未暴露部分的图案。 曝光之后，可能会发生蚀刻工艺，例如湿法蚀刻，去除硬掩模的未曝光部分。 蚀刻之后，可以对硬掩模进行退火，烘烤或进行等离子体处理。

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