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    SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN
    1.
    发明申请
    SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN 审中-公开
    选择性抑制含有硅和氧的材料的干蚀速率

    公开(公告)号：WO2013032638A1

    公开(公告)日：2013-03-07

    申请号：PCT/US2012/049768

    申请日：2012-08-06

    Applicant: APPLIED MATERIALS, INC. ,  WANG, Yunyu ,  WANG, Anchuan ,  ZHANG, Jingchun ,  INGLE, Nitin, K. ,  LEE, Young, S.

    Inventor： WANG, Yunyu ,  WANG, Anchuan ,  ZHANG, Jingchun ,  INGLE, Nitin, K. ,  LEE, Young, S.

    IPC: H01L21/3065

    CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/32137

    Abstract: A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.

    Abstract translation: 描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。 使用该技术提高其选择性的材料的实例包括氮化硅和硅。 远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性的固体副产物。 第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。 远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地除去缺乏保护性固体副产物的材料。 第二级的等离子体流出物由含氟前体的远程等离子体形成。

    SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION
    4.
    发明申请
    SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION 审中-公开
    通过可转化氢终止方式选择性硅

    公开(公告)号：WO2013052712A2

    公开(公告)日：2013-04-11

    申请号：PCT/US2012/058818

    申请日：2012-10-04

    Applicant: APPLIED MATERIALS, INC. ,  WANG, Anchuan ,  ZHANG, Jingchun ,  INGLE, Nitin K. ,  LEE, Young S.

    Inventor： WANG, Anchuan ,  ZHANG, Jingchun ,  INGLE, Nitin K. ,  LEE, Young S.

    IPC: H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/32137

    Abstract: Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.

    Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。 等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。 硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。 含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。 这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

    POLYSILICON FILMS BY HDP-CVD
    5.
    发明申请
    POLYSILICON FILMS BY HDP-CVD 审中-公开
    聚硅氧烷膜通过HDP-CVD

    公开(公告)号：WO2012102809A3

    公开(公告)日：2012-10-04

    申请号：PCT/US2011066601

    申请日：2011-12-21

    Applicant: APPLIED MATERIALS INC ,  WANG ANCHUAN ,  CHEN XIAOLIN ,  LEE YOUNG S

    Inventor： WANG ANCHUAN ,  CHEN XIAOLIN ,  LEE YOUNG S

    IPC: H01L21/205

    CPC classification number: H01L21/0262 ,  C23C16/0245 ,  C23C16/045 ,  C23C16/24 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/28556

    Abstract: Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g.

    Abstract translation: 描述形成多晶硅层的方法。 所述方法包括在包含沉积衬底的衬底处理区域中从硅前体形成高密度等离子体。 所描述的方法相对于现有技术在降低的衬底温度（例如<500℃）下产生多晶膜。 偏置等离子体功率调整的可用性进一步使得能够调整形成的多晶硅层的共形性。 当掺杂物被包括在高密度等离子体中时，它们可以以不需要单独的激活步骤的方式结合到多晶硅层中。

    A REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS
    6.
    发明申请
    A REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS 审中-公开
    具有循环高低压清洁步骤的远程等离子体清洁工艺

    公开(公告)号：WO2010047953A2

    公开(公告)日：2010-04-29

    申请号：PCT/US2009/059878

    申请日：2009-10-07

    Applicant: APPLIED MATERIALS, INC. ,  HUA, Zhong, Qiang ,  KAMATH, Sanjay ,  LEE, Young, S. ,  YIEH, Ellie, Y. ,  LE, Hien-Minh, Huu ,  PATEL, Anjana, M. ,  GONDHALEKAR, Sudhir, R.

    Inventor： HUA, Zhong, Qiang ,  KAMATH, Sanjay ,  LEE, Young, S. ,  YIEH, Ellie, Y. ,  LE, Hien-Minh, Huu ,  PATEL, Anjana, M. ,  GONDHALEKAR, Sudhir, R.

    IPC: H01L21/3065 ,  H01L21/302 ,  H01L21/205

    CPC classification number: B08B7/0035 ,  C23C16/4405

    Abstract: A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.

    Abstract translation: 远程等离子体工艺，用于在处理设置在衬底处理室中的衬底之后从衬底处理室的一个或多个内表面移除不需要的沉积堆积物。 在一个实施例中，将衬底转移出衬底处理室，并将含氟蚀刻剂气体流引入形成反应物质的远程等离子体源中。 产生从远程等离子体源到基板处理室的反应性物质的连续流动，同时重复高压和低压清洁步骤的循环。 在高压清洁步骤期间，活性物质流入衬底处理室，同时衬底处理室内的压力保持在4-15托之间。 在低压清洁步骤中，活性物质流入基板处理室，同时将基板处理室的压力降低高压清洁步骤中达到的高压的至少50％。

    INTEGRATED PROCESS MODULATION FOR PSG GAPFILL
    10.
    发明申请
    INTEGRATED PROCESS MODULATION FOR PSG GAPFILL 审中-公开
    PSG GAPFILL的集成过程调制

    公开(公告)号：WO2012177789A3

    公开(公告)日：2013-03-14

    申请号：PCT/US2012043384

    申请日：2012-06-20

    Applicant: APPLIED MATERIALS INC ,  LEE YOUNG S ,  WANG ANCHUAN ,  CHAN LAN CHIA ,  VENKATARAMAN SHANKAR

    Inventor： LEE YOUNG S ,  WANG ANCHUAN ,  CHAN LAN CHIA ,  VENKATARAMAN SHANKAR

    IPC: H01L21/205 ,  H01L21/31

    CPC classification number: C23C16/56 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/76224

    Abstract: A method of depositing a phosphosilicate glass (PSG) film on a substrate disposed in a substrate processing chamber includes depositing a first portion of the PSG film over the substrate using a high-density plasma process. Thereafter, a portion of the first portion of the PSG film may be etched back. The etch back process may include flowing a halogen precursor to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the etch back. The method also includes flowing a halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber, and exposing the first portion of the PSG film to a phosphorus-containing gas to provide a substantially uniform phosphorus concentration throughout the first portion of the PSG film.

    Abstract translation: 在设置在衬底处理室中的衬底上沉积磷硅玻璃（PSG）膜的方法包括使用高密度等离子体工艺在衬底上沉积第一部分PSG膜。 此后，PSG膜的第一部分的一部分可被回蚀刻。 回蚀工艺可以包括将卤素前体流动到衬底处理室，从卤素前体形成高密度等离子体，并且在回蚀刻之后使卤素前体终止流动。 该方法还包括使卤素清除剂流到衬底处理室以与衬底处理室中的残留卤素反应，并将PSG膜的第一部分暴露于含磷气体，以在整个第一部分中提供基本均匀的磷浓度 的PSG电影。

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