公开(公告)号：WO2011008449A3

公开(公告)日：2011-01-20

申请号：PCT/US2010/039675

申请日：2010-06-23

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  BAUM, Thomas, H. ,  CHEN, Ing-shin, Barry ,  CHISM, Richard, D.

Inventor： BAUM, Thomas, H. ,  CHEN, Ing-shin, Barry ,  CHISM, Richard, D.

IPC: G01N27/00 ,  G01N27/06 ,  G01F13/00 ,  G01D13/00 ,  G01K7/02

Abstract: A fluid monitoring apparatus, including a circuitry housing containing circuitry for processing fluid sensing signals and responsively transmitting an output, with a sensor assembly adapted for mechanical and electrical coupling to the circuitry housing. The sensor assembly includes at least one sensing member arranged to respond to a fluid species of interest in the monitored fluid, for generation of an output. The apparatus includes at least one of (A) a printed circuit board adapted to engage the circuitry housing and to mechanically couple to the sensor assembly, (B) the sensor assembly including a base and sensing element removably connected to the base by press-fit coupling elements, and (C) the sensor assembly including a base and a sensing filament connected thereto, and a filament guard to protectively circumscribe the sensing filament.

公开(公告)号：WO2012177642A3

公开(公告)日：2012-12-27

申请号：PCT/US2012/043153

申请日：2012-06-19

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  HENDRIX, Bryan, C. ,  BILODEAU, Steven, M. ,  CHEN, Ing-shin, Barry ,  ROEDER, Jeffrey, F. ,  STAUF, Gregory, T.

Inventor： HENDRIX, Bryan, C. ,  BILODEAU, Steven, M. ,  CHEN, Ing-shin, Barry ,  ROEDER, Jeffrey, F. ,  STAUF, Gregory, T.

IPC: H01L21/31 ,  H01L21/205

Abstract: High-k materials and devices, e.g., DRAM capacitors, and methods of making and using the same. Various methods of forming perovskite films are described, including methods in which perovskite material is deposited on the substrate by a pulsed vapor deposition process involving contacting of the substrate with perovskite material-forming metal precursors. In one such method, the process is carried out with doping or alloying of the perovskite material with a higher mobility and/or higher volatility metal species than the metal species in the perovskite material- forming metal precursors. In another method, the perovskite material is exposed to elevated temperature for sufficient time to crystallize or to enhance crystallization of the perovskite material, followed by growth of the perovskite material under pulsed vapor deposition conditions. Various perovskite compositions are described, including: (Sr, Pb)TiO 3 ; SrRuO 3 or SrTiO 3 , doped with Zn, Cd or Hg; Sr(Sn,Ru)O 3 ; and Sr(Sn,Ti)O 3 .

公开(公告)号：WO2012177642A2

公开(公告)日：2012-12-27

申请号：PCT/US2012043153

申请日：2012-06-19

Applicant: ADVANCED TECH MATERIALS ,  HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  CHEN ING-SHIN BARRY ,  ROEDER JEFFREY F ,  STAUF GREGORY T

Inventor： HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  CHEN ING-SHIN BARRY ,  ROEDER JEFFREY F ,  STAUF GREGORY T

IPC: H01L21/31 ,  H01L21/205

CPC classification number: H01L28/55 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/0228 ,  H01L27/108

Abstract: High-k materials and devices, e.g., DRAM capacitors, and methods of making and using the same. Various methods of forming perovskite films are described, including methods in which perovskite material is deposited on the substrate by a pulsed vapor deposition process involving contacting of the substrate with perovskite material-forming metal precursors. In one such method, the process is carried out with doping or alloying of the perovskite material with a higher mobility and/or higher volatility metal species than the metal species in the perovskite material- forming metal precursors. In another method, the perovskite material is exposed to elevated temperature for sufficient time to crystallize or to enhance crystallization of the perovskite material, followed by growth of the perovskite material under pulsed vapor deposition conditions. Various perovskite compositions are described, including: (Sr, Pb)TiO3; SrRuO3 or SrTiO3, doped with Zn, Cd or Hg; Sr(Sn,Ru)O3; and Sr(Sn,Ti)O3.

Abstract translation: 高k材料和器件，例如DRAM电容器，以及制造和使用它们的方法。 描述了形成钙钛矿薄膜的各种方法，包括其中通过脉冲气相沉积工艺将钙钛矿材料沉积在基底上的方法，包括使基底与形成钙钛矿的金属前体接触。 在一种这样的方法中，该方法通过钙钛矿材料的掺杂或合金化与在形成钙钛矿材料的金属前体中的金属物质具有更高的迁移率和/或更高的挥发性金属物质进行。 在另一种方法中，将钙钛矿材料暴露于升高的温度足够的时间以结晶或增强钙钛矿材料的结晶，随后在脉冲气相沉积条件下生长钙钛矿材料。 描述了各种钙钛矿组合物，包括：（Sr，Pb）TiO 3; SrRuO3或SrTiO3，掺杂Zn，Cd或Hg; SR（锡，钌）O3; 和Sr（Sn，Ti）O 3。

公开(公告)号：WO2011008449A2

公开(公告)日：2011-01-20

申请号：PCT/US2010039675

申请日：2010-06-23

Applicant: ADVANCED TECH MATERIALS ,  BAUM THOMAS H ,  CHEN ING-SHIN BARRY ,  CHISM RICHARD D

Inventor： BAUM THOMAS H ,  CHEN ING-SHIN BARRY ,  CHISM RICHARD D

IPC: G01N27/06 ,  G01D13/00 ,  G01F13/00 ,  G01K7/02 ,  G01N27/00

CPC classification number: G01D11/245

Abstract: A fluid monitoring apparatus, including a circuitry housing containing circuitry for processing fluid sensing signals and responsively transmitting an output, with a sensor assembly adapted for mechanical and electrical coupling to the circuitry housing. The sensor assembly includes at least one sensing member arranged to respond to a fluid species of interest in the monitored fluid, for generation of an output. The apparatus includes at least one of (A) a printed circuit board adapted to engage the circuitry housing and to mechanically couple to the sensor assembly, (B) the sensor assembly including a base and sensing element removably connected to the base by press-fit coupling elements, and (C) the sensor assembly including a base and a sensing filament connected thereto, and a filament guard to protectively circumscribe the sensing filament.

Abstract translation: 一种流体监测装置，包括用于处理流体感测信号并且响应地传输输出的电路壳体，其具有适于机械和电耦合到电路壳体的传感器组件。 所述传感器组件包括至少一个感测构件，所述至少一个感测构件被布置成响应于所监视的流体中的感兴趣的流体种类，以产生输出。 所述装置包括以下至少一个：（A）适于接合所述电路外壳并机械地耦合到所述传感器组件的印刷电路板;（B）所述传感器组件包括通过压配合可移除地连接到所述基座的基座和感测元件 耦合元件，和（C）传感器组件，其包括底座和连接到其上的感测灯丝，以及灯丝防护罩，用于保护地围绕感测灯丝。