Abstract:
Compositions and processes for leaching noble metals from materials comprising said noble metals. Advantageously, the halide-based composition is environmentally friendly and effectively removes noble metals at room temperature without the need for high pressures and electrodes.
Abstract:
An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The compositions achieve highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material, copper interconnect material, or cobalt-containing materials.
Abstract:
A direct contact pressure dispensing apparatus including a skimmer arranged to float on liquid within a container and defining at least one liquid extraction opening positioned below an upper level of liquid in the container, and a material extraction hose coupled between the skimmer and an outlet port of the container. Withdrawal of liquid proximate to a gas/liquid interface reduces or inhibits saturation of liquid with pressurization gas. The skimmer can translate along a vertical support rod. A pressurizable reservoir can be arranged between the pressure dispensing container and a locus of use for the liquid.
Abstract:
Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.
Abstract:
A shippable liquid storage and dispensing apparatus includes a collapsible liner arranged within a container, with a dispense head coupled to the container, suitable for handling oxygen- and moisture-sensitive materials. The dispense head includes a pressurization gas passage, a pressurization gas valve, a liquid passage, a liquid valve, a liner gas passage, and a liner gas valve, wherein each valve may have an associated quick connect fitting. The dispense head remains attached to the container during inert gas purging, liner filling, container shipment, and liquid dispensing. Pressurized inert gas may be maintained in the liner overlying liquid-containing material during shipment of the coupled dispense head and container. The container may have an extended chime to provide a protective zone that contains the entirety of the dispense head.
Abstract:
A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one surfactant. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.
Abstract:
A dip tube assembly having a tubular body portion and a coupler overmolded to a first end of the tubular body portion, the coupler configured for removable coupling with the mouth of a container storing contents therein. Also disclosed are a method of making the overmolded dip tube assembly and a container system including the overmolded dip tube assembly. In some embodiments, the tubular body portion and/or the coupler may include retention features molded into a surface thereof at an overmold interface between the tubular body portion and the coupler.
Abstract:
Systems, reagent support trays, particle suppression devices, and methods are disclosed. In one aspect, a system includes a vaporizer vessel having one or more interior walls enclosing an interior volume and a plurality of reagent support trays configured to be vertically stackable within the interior volume. Each of the plurality of reagent support trays is configured to be vertically stackable within the interior volume to form a stack of reagent support trays. One or more of the plurality of reagent support trays is configured to redirect a flow of a gas passing between adjacent reagent support trays in the stack of reagent support trays to cause the flow of gas to interact with the source reagent material in a particular reagent support tray before passing into a next of the plurality of reagent support trays in the stack of reagent support trays.
Abstract:
A method for manufacturing a liner, the method including forming a tubular body portion having a top circumferential edge, a bottom circumferential edge, and a weld seam or seams extending from the top circumferential edge to the bottom circumferential edge; stretching the tubular body near the top circumferential edge and welding a top liner sheet portion along the stretched top circumferential edge, the top liner sheet portion having a fitment welded thereto; and stretching the tubular body near the bottom circumferential edge and welding a bottom liner sheet portion along the stretched bottom circumferential edge. The weld between the tubular body portion and the top liner sheet portion may be effected with the inner wetted surfaces of each portion in contact. Similarly, the weld between the tubular body portion and the bottom liner sheet portion is effected with the inner wetted surfaces of each portion in contact.
Abstract:
A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium.