公开(公告)号：WO0168957A9

公开(公告)日：2003-01-16

申请号：PCT/US0108047

申请日：2001-03-13

Applicant: II VI INC ,  SNYDER DAVID W ,  EVERSON WILLIAM J

Inventor： SNYDER DAVID W ,  EVERSON WILLIAM J

IPC: C30B29/36 ,  C30B11/14 ,  C30B19/12 ,  C30B23/00 ,  C30B23/02 ,  C30B25/18 ,  C30B29/64 ,  C30B25/04

CPC classification number: C30B23/00 ,  C30B11/14 ,  C30B19/12 ,  C30B23/02 ,  C30B25/18 ,  C30B29/36 ,  C30B29/60

Abstract: Disclosed is a method for reproducibly producing large size, single crystals in a crystal growth chamber. The method includes the steps of: (a) forming a plurality of smaller size tiles of single crystals of substantially the same crystal orientation as the desired large size, single crystal; (b) assembling the plurality of smaller tiles into a structure having a larger size while minimizing gapping between adjacent tiles; (c) placing the assembly of smaller tiles formed in step (b) into a growth chamber; and (d) through a growth reaction carried out in the growth chamber, forming a large size single crystal using the assembly of smaller tiles formed in step (b) as a seed crystal for the growth reaction.

Abstract translation: 公开了一种在晶体生长室中可再现地制造大尺寸单晶的方法。 该方法包括以下步骤：（a）形成多个具有与期望的大尺寸单晶基本相同的晶体取向的较小尺寸的单晶片; （b）将多个较小的瓦片组装成具有较大尺寸的结构，同时最小化相邻瓦片之间的间隙; （c）将在步骤（b）中形成的较小瓦片的组件放置在生长室中; 和（d）通过在生长室中进行的生长反应，使用步骤（b）中形成的较小瓦片的组合形成大尺寸单晶作为生长反应的晶种。

公开(公告)号：WO0168954A2

公开(公告)日：2001-09-20

申请号：PCT/US0107966

申请日：2001-03-13

Applicant: II VI INC ,  SNYDER DAVID W ,  EVERSON WILLIAM J

Inventor： SNYDER DAVID W ,  EVERSON WILLIAM J

IPC: C30B23/06 ,  C30B23/00 ,  C30B25/22 ,  C30B29/36 ,  C30B35/00 ,  H01L21/203 ,  C30B

CPC classification number: C30B23/06 ,  C30B23/00 ,  C30B23/002 ,  C30B29/36 ,  C30B35/00 ,  Y10T117/1032

Abstract: Disclosed is an apparatus and a method for growing single crystals of materials such as silicon carbide through axial gradient transport. A source of the material (10) is placed at one end of a reaction chamber (2) opposite a seed crystal (13). Separate heating elements (16 and 60; 20 and 62) are positioned at opposite ends of the reaction chamber. The reaction chamber (2) is placed in a pressurized growth chamber (26). By appropriately controlling the pressure in the growth chamber (26) and the temperature of the heating elements (16, 20), including the temperature differential therebetween, a uniaxial temperature gradient is generated in the reaction chamber (2). In this manner, substantially planar isotherms are generated and a high quality crystal can be grown through a physical vapor transport process.

Abstract translation: 公开了一种用于通过轴向梯度输送生长单晶材料如碳化硅的装置和方法。 材料源（10）放置在与晶种（13）相对的反应室（2）的一端。 单独的加热元件（16和60; 20和62）位于反应室的相对端。 将反应室（2）放置在加压生长室（26）中。 通过适当地控制生长室（26）中的压力和包括它们之间的温差的加热元件（16,20）的温度，在反应室（2）中产生单轴温度梯度。 以这种方式，产生基本上平面的等温线，并且可以通过物理蒸气传输过程生长高质量的晶体。

公开(公告)号：WO2001068957A1

公开(公告)日：2001-09-20

申请号：PCT/US2001/008047

申请日：2001-03-13

Applicant: II-VI INCORPORATED ,  SNYDER, David, W. ,  EVERSON, William, J.

Inventor： SNYDER, David, W. ,  EVERSON, William, J.

IPC: C30B25/04

CPC classification number: C30B23/00 ,  C30B11/14 ,  C30B19/12 ,  C30B23/02 ,  C30B25/18 ,  C30B29/36 ,  C30B29/60

Abstract: Disclosed is a method for reproducibly producing large size, single crystals in a crystal growth chamber. The method includes the steps of: (a) forming a plurality of smaller size tiles of single crystals of substantially the same crystal orientation as the desired large size, single crystal; (b) assembling the plurality of smaller tiles into a structure having a larger size while minimizing gapping between adjacent tiles; (c) placing the assembly of smaller tiles formed in step (b) into a growth chamber; and (d) through a growth reaction carried out in the growth chamber, forming a large size single crystal using the assembly of smaller tiles formed in step (b) as a seed crystal for the growth reaction.

Abstract translation: 公开了一种在晶体生长室中可再现地制造大尺寸单晶的方法。 该方法包括以下步骤：（a）形成多个具有与期望的大尺寸单晶基本相同的晶体取向的较小尺寸的单晶片; （b）将多个较小的瓦片组装成具有较大尺寸的结构，同时最小化相邻瓦片之间的间隙; （c）将在步骤（b）中形成的较小瓦片的组件放置在生长室中; 和（d）通过在生长室中进行的生长反应，使用步骤（b）中形成的较小瓦片的组合形成大尺寸单晶作为生长反应的晶种。