公开(公告)号：WO2011094038A2

公开(公告)日：2011-08-04

申请号：PCT/US2011/020283

申请日：2011-01-05

Applicant: LAM RESEARCH CORPORATION ,  MIKHAYLICHENKO, Katrina ,  SYOMIN, Denis ,  FU, Qian ,  GALE, Glenn W. ,  LIU, Shenjian ,  WILCOXSON, Mark H.

Inventor： MIKHAYLICHENKO, Katrina ,  SYOMIN, Denis ,  FU, Qian ,  GALE, Glenn W. ,  LIU, Shenjian ,  WILCOXSON, Mark H.

CPC classification number: H01L21/31116 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3081 ,  H01L21/31111

Abstract: A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.

Abstract translation: 提供了一种用于处理用于制造半导体器件的晶片的方法。 该方法可以包括在晶片上形成高纵横比特征，然后进行湿法处理和干燥。 在干燥过程中，会发生图案坍塌。 可以修复该图案塌陷以允许晶片的额外处理。 在某些情况下，可以通过蚀刻来修复图案塌陷，其中蚀刻会破坏在图案塌陷期间可能形成的键。

公开(公告)号：WO2006007005A1

公开(公告)日：2006-01-19

申请号：PCT/US2005/013885

申请日：2005-04-22

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  GALE, Glenn, W. ,  HILLMAN, Joseph, T. ,  JACOBSON, Gunilla ,  PALMER, Bentley

Inventor： GALE, Glenn, W. ,  HILLMAN, Joseph, T. ,  JACOBSON, Gunilla ,  PALMER, Bentley

IPC: H01L21/311

CPC classification number: H01L21/31133 ,  H01L21/31111

Abstract: A method and system for processing a substrate (178, 265) in a film removal system (200, 201). The method includes providing the substrate (178, 265) in a substrate chamber (250) of a film removal system (200, 201), where the substrate (178, 265) has a micro-feature containing a dielectric film (182) on a sidewall (183) of the micro-feature (170) and a photoresist film (184) covering a portion the dielectric film (182), and performing a first film removal process using supercritical CO 2 processing to remove the portion (186) of the dielectric film (182) not covered by the photoresist film (184). Following the first film removal process, a second film removal process using supercritical CO 2 processing can be performed to remove the photoresist film (184). Alternately, wet processing can be used to perform one of the first film removal process or the second film removal process.

Abstract translation: 一种用于在膜去除系统（200,201）中处理衬底（178,265）的方法和系统。 该方法包括将衬底（178,265）设置在膜去除系统（200,201）的衬底室（250）中，其中衬底（178,265）具有包含介电膜（182）的微特征 所述微特征（170）的侧壁（183）和覆盖所述电介质膜（182）的一部分的光致抗蚀剂膜（184），并且使用超临界CO

公开(公告)号：WO2011094038A3

公开(公告)日：2011-12-08

申请号：PCT/US2011020283

申请日：2011-01-05

Applicant: LAM RES CORP ,  MIKHAYLICHENKO KATRINA ,  SYOMIN DENIS ,  FU QIAN ,  GALE GLENN W ,  LIU SHENJIAN ,  WILCOXSON MARK H

Inventor： MIKHAYLICHENKO KATRINA ,  SYOMIN DENIS ,  FU QIAN ,  GALE GLENN W ,  LIU SHENJIAN ,  WILCOXSON MARK H

IPC: H01L21/302 ,  H01L21/027

CPC classification number: H01L21/31116 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3081 ,  H01L21/31111

Abstract: A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.

Abstract translation: 提供了一种用于处理在制造半导体器件中使用的晶片的方法。 该方法可以包括在晶片上形成高纵横比特征，然后进行湿法加工和干燥。 在干燥期间，可能发生图案塌陷。 可以修复该图案崩溃以允许对晶片进行额外的处理。 在某些情况下，可以通过蚀刻来修复图案塌陷，其中蚀刻破坏在图案崩溃期间可能形成的键。