公开(公告)号：WO2004077608A2

公开(公告)日：2004-09-10

申请号：PCT/US2004/004399

申请日：2004-02-12

Applicant: LAM RESEARCH CORPORATION ,  WILCOXSON, Mark, H. ,  BAILEY, Andrew, D., III

Inventor： WILCOXSON, Mark, H. ,  BAILEY, Andrew, D., III

IPC: H01Q

CPC classification number: H01J37/32467 ,  H01J37/321 ,  H01Q1/36 ,  H01Q7/00

Abstract: An antenna arrangement for generating an electric field inside a process chamber through a window. Generally, the antenna arrangement comprises an outer loop, comprising a first outer loop turn disposed around an antenna axis, an inner loop, comprising a first inner loop turn disposed around the antenna axis, wherein the inner loop is closer to the antenna axis than the outer loop is to the antenna axis in each azimuthal direction, and a radial connector radially electrically connecting the outer loop to the inner loop, wherein the radial connector is placed a large distance from the window.

Abstract translation: 一种用于通过窗口在处理室内产生电场的天线装置。 通常，天线装置包括外环，包括围绕天线轴设置的第一外环转向，内环，包括围绕天线轴设置的第一内环转，其中内环比天线轴更靠近天线轴 外环是在每个方位角方向上的天线轴线，以及径向连接器将外环径向电连接到内环，其中径向连接器与窗口放置很大距离。

公开(公告)号：WO2011094038A2

公开(公告)日：2011-08-04

申请号：PCT/US2011/020283

申请日：2011-01-05

Applicant: LAM RESEARCH CORPORATION ,  MIKHAYLICHENKO, Katrina ,  SYOMIN, Denis ,  FU, Qian ,  GALE, Glenn W. ,  LIU, Shenjian ,  WILCOXSON, Mark H.

Inventor： MIKHAYLICHENKO, Katrina ,  SYOMIN, Denis ,  FU, Qian ,  GALE, Glenn W. ,  LIU, Shenjian ,  WILCOXSON, Mark H.

CPC classification number: H01L21/31116 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3081 ,  H01L21/31111

Abstract: A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.

Abstract translation: 提供了一种用于处理用于制造半导体器件的晶片的方法。 该方法可以包括在晶片上形成高纵横比特征，然后进行湿法处理和干燥。 在干燥过程中，会发生图案坍塌。 可以修复该图案塌陷以允许晶片的额外处理。 在某些情况下，可以通过蚀刻来修复图案塌陷，其中蚀刻会破坏在图案塌陷期间可能形成的键。

公开(公告)号：WO2004077608A3

公开(公告)日：2006-01-12

申请号：PCT/US2004004399

申请日：2004-02-12

Applicant: LAM RES CORP ,  WILCOXSON MARK H ,  BAILEY ANDREW D III

Inventor： WILCOXSON MARK H ,  BAILEY ANDREW D III

IPC: H01J37/32 ,  H01Q1/36 ,  H01Q7/00 ,  H01J7/24

CPC classification number: H01J37/32467 ,  H01J37/321 ,  H01Q1/36 ,  H01Q7/00

Abstract: An antenna arrangement (210) for generating an electric field inside a process chamber (202) through a window (212). Generally, the antenna arrangement (210) comprises an outer loop (610), comprising a first outer loop turn (618) disposed around an antenna axis (614), an inner loop (606), comprising a first inner loop turn (616) disposed around the antenna axis (614), wherein the inner loop (606) is closer to the antenna axis (614) than the outer loop (610) is to the antenna axis (614) in each azimuthal direction, and a radial connector (640) radially electrically connecting the outer loop (610) to the inner loop (606), wherein the radial connector (640) is placed a large distance from the window (212).

Abstract translation: 一种用于通过窗口（212）在处理室（202）内产生电场的天线装置（210）。 通常，天线装置（210）包括外环（610），包括设置在天线轴线（614）周围的第一外环路（618），内环路（606），包括第一内环路（616） 设置在所述天线轴线（614）周围，其中所述内环路（606）比所述外环路（610）在每个方位方向上相对于所述天线轴线（614）更靠近所述天线轴线（614），并且径向连接器 640）将所述外环（610）径向电连接到所述内环（606），其中所述径向连接器（640）与所述窗（212）放置距离很远。

公开(公告)号：WO2007130630A2

公开(公告)日：2007-11-15

申请号：PCT/US2007/010929

申请日：2007-05-04

Applicant: LAM RESEARCH CORPORATION ,  YOON, Hyungsuk, Alexander ,  BAILEY, Andrew, D., III. ,  JASON, A., Ryder ,  WILCOXSON, Mark, H. ,  GASPARITSCH, Jeffrey, G. ,  RANDY Johnson ,  HOFFMANN, Stephan, P.

Inventor： YOON, Hyungsuk, Alexander ,  BAILEY, Andrew, D., III. ,  JASON, A., Ryder ,  WILCOXSON, Mark, H. ,  GASPARITSCH, Jeffrey, G. ,  RANDY Johnson ,  HOFFMANN, Stephan, P.

IPC: A47L9/06

CPC classification number: H01L21/67046 ,  Y10S134/902

Abstract: An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.

Abstract translation: 用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。 刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。 研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。 刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物 底物。

公开(公告)号：WO2003012821A3

公开(公告)日：2003-02-13

申请号：PCT/US2002/023092

申请日：2002-07-18

Applicant: LAM RESEARCH CORPORATION ,  WILCOXSON, Mark, H. ,  BAILEY, III, Andrew, D. ,  KUTHI, Andras ,  SMITH, Michael, G.R. ,  SCHOEPP, Alan, M.

Inventor： WILCOXSON, Mark, H. ,  BAILEY, III, Andrew, D. ,  KUTHI, Andras ,  SMITH, Michael, G.R. ,  SCHOEPP, Alan, M.

IPC: H01J37/32

Abstract: An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn (704) with a first turn gap (1112); a second turn (708) with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector (1132) electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

公开(公告)号：WO2011094038A3

公开(公告)日：2011-12-08

申请号：PCT/US2011020283

申请日：2011-01-05

Applicant: LAM RES CORP ,  MIKHAYLICHENKO KATRINA ,  SYOMIN DENIS ,  FU QIAN ,  GALE GLENN W ,  LIU SHENJIAN ,  WILCOXSON MARK H

Inventor： MIKHAYLICHENKO KATRINA ,  SYOMIN DENIS ,  FU QIAN ,  GALE GLENN W ,  LIU SHENJIAN ,  WILCOXSON MARK H

IPC: H01L21/302 ,  H01L21/027

CPC classification number: H01L21/31116 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3081 ,  H01L21/31111

Abstract: A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.

Abstract translation: 提供了一种用于处理在制造半导体器件中使用的晶片的方法。 该方法可以包括在晶片上形成高纵横比特征，然后进行湿法加工和干燥。 在干燥期间，可能发生图案塌陷。 可以修复该图案崩溃以允许对晶片进行额外的处理。 在某些情况下，可以通过蚀刻来修复图案塌陷，其中蚀刻破坏在图案崩溃期间可能形成的键。

公开(公告)号：WO2007130630A3

公开(公告)日：2008-12-31

申请号：PCT/US2007010929

申请日：2007-05-04

Applicant: LAM RES CORP ,  YOON HYUNGSUK ALEXANDER ,  BAILEY ANDREW D III ,  JASON A RYDER ,  WILCOXSON MARK H ,  GASPARITSCH JEFFREY G ,  RANDY JOHNSON ,  HOFFMANN STEPHAN P

Inventor： YOON HYUNGSUK ALEXANDER ,  BAILEY ANDREW D III ,  JASON A RYDER ,  WILCOXSON MARK H ,  GASPARITSCH JEFFREY G ,  RANDY JOHNSON ,  HOFFMANN STEPHAN P

IPC: B08B11/02

CPC classification number: H01L21/67046 ,  Y10S134/902

Abstract: An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.

Abstract translation: 用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。 刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。 研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。 刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物 底物。

公开(公告)号：WO2008079389A1

公开(公告)日：2008-07-03

申请号：PCT/US2007/026276

申请日：2007-12-20

Applicant: LAM RESEARCH CORPORATION ,  WILCOXSON, Mark, H. ,  RADIN, Christohpher, J.

Inventor： WILCOXSON, Mark, H. ,  RADIN, Christohpher, J.

IPC: H01L21/304

CPC classification number: B08B3/04 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715

Abstract: An apparatus for processing a substrate is disclosed. The apparatus includes a proximity head having a surface that can be interfaced in proximity to a surface of a substrate. The proximity head has a plurality of dispensing ports capable of dispensing a first process mixture and a second process mixture to the surface of the substrate. The proximity head also has a plurality of removal ports capable of removing the first and second process mixtures from the surface of the substrate. The apparatus also has a distribution manifold connected to the plurality of dispensing ports for dispensing the first process mixture and second process mixture. The distribution manifold is connected to the plurality of removal ports, and is structured to define selected regions of the proximity head for delivery and removal of the first process mixture and the second process mixture.

Abstract translation: 公开了一种用于处理衬底的设备。 该装置包括具有能够接近衬底表面的表面的接近头。 邻近头具有能够将第一工艺混合物和第二工艺混合物分配到衬底表面的多个分配端口。 接近头还具有能够从衬底的表面去除第一和第二工艺混合物的多个移除端口。 该设备还具有连接到多个分配端口的分配歧管，用于分配第一处理混合物和第二处理混合物。 分配歧管连接到多个移除端口，并且构造成限定邻近头部的选定区域，用于递送和移除第一处理混合物和第二处理混合物。

公开(公告)号：WO2005122226A1

公开(公告)日：2005-12-22

申请号：PCT/US2005/018784

申请日：2005-05-27

Applicant: LAM RESEARCH CORPORATION ,  YUN, Seokmin ,  ZHU, Ji ,  CIRIGLIANO, Peter ,  LEE, Sangheon ,  CHOI, Thomas, S. ,  LOEWENHARDT, Peter ,  WILCOXSON, Mark, H. ,  SADJADI, Reza ,  HUDSON, Eric, A. ,  TIETZ, James, V.

Inventor： YUN, Seokmin ,  ZHU, Ji ,  CIRIGLIANO, Peter ,  LEE, Sangheon ,  CHOI, Thomas, S. ,  LOEWENHARDT, Peter ,  WILCOXSON, Mark, H. ,  SADJADI, Reza ,  HUDSON, Eric, A. ,  TIETZ, James, V.

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76829

Abstract: A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase uses first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The stripping phase for stripping the photoresist mask uses a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.

Abstract translation: 一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。 执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。 气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。 保护层形成阶段使用具有沉积气体化学性质的第一气体化学，其中对于每个循环，保护层形成阶段在约0.005至10秒内进行。 用于剥离光致抗蚀剂掩模的剥离阶段使用第二气体化学品，其使用剥离气体化学，其中第一气体化学物质不同于第二气体化学物质，其中蚀刻阶段在每个循环的约0.005至10秒内进行。

公开(公告)号：WO2003012821A2

公开(公告)日：2003-02-13

申请号：PCT/US2002/023092

申请日：2002-07-18

Applicant: LAM RESEARCH CORPORATION ,  WILCOXSON, Mark, H. ,  BAILEY, III, Andrew, D. ,  KUTHI, Andras ,  SMITH, Michael, G.R. ,  SCHOEPP, Alan, M.

Inventor： WILCOXSON, Mark, H. ,  BAILEY, III, Andrew, D. ,  KUTHI, Andras ,  SMITH, Michael, G.R. ,  SCHOEPP, Alan, M.

IPC: H01J37/00

CPC classification number: H01J37/321 ,  H01J37/32467

Abstract: An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

Abstract translation: 提供了一种用于在处理室内产生电场的天线装置。 通常，天线装置包括围绕天线轴设置的第一回路。 第一回路包括具有第一匝间隙的第一匝; 具有第二匝间隙的第二匝，其中所述第二匝与所述第一匝同心并共面并与所述第一匝间隔开，并且其中所述天线轴穿过所述第一匝和第二匝的中心; 电连接在所述第一匝的第二端和所述第二匝的第一端之间的第一匝秒转向连接器包括在所述第一匝和所述第二匝之间并且与所述第一匝间隔和所述第二匝间隔并且 第二回合差距。