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    METHOD OF MAKING A SEMICONDUCTOR DEVICE USING TREATED PHOTORESIST
    1.
    发明申请
    METHOD OF MAKING A SEMICONDUCTOR DEVICE USING TREATED PHOTORESIST 审中-公开
    使用处理过的光电子器件制造半导体器件的方法

    公开(公告)号：WO2005082122A2

    公开(公告)日：2005-09-09

    申请号：PCT/US2005/000961

    申请日：2005-01-12

    Applicant: FREESCALE SEMICONDUCTOR, INC. ,  GARZA, Cesar, M. ,  DARLINGTON, William, D. ,  FILIPIAK, Stanley, M. ,  VASEK, James, E.

    Inventor： GARZA, Cesar, M. ,  DARLINGTON, William, D. ,  FILIPIAK, Stanley, M. ,  VASEK, James, E.

    IPC: H01L21/027 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/78

    CPC classification number: H01L21/0273 ,  H01L21/0338 ,  H01L21/28123 ,  H01L21/32139 ,  H01L29/66477 ,  H01L29/78 ,  Y10S438/945 ,  Y10S438/947

    Abstract: A semiconductor device (50) is made by patterning a conductive layer (16) for forming gates (60, 62, 64) of transistors (80, 82, 84). The process for forming the gates (60, 62, 64) has a step of patterning photoresist (54, 56, 58) the overlies the conductive layer (16). The patterned photoresist (54, 56, 58) is trimmed so that its width is reduced. Fluorine, preferably F 2 , is applied to the trimmed photoresist (54, 56, 58) to increase its hardness and its selectivity to the conductive layer. Using the trimmed and fluorinated photoresist (54, 56, 58) as a mask, the conductive layer (16) is etched to form conductive features useful as gates (60, 62, 64). Transistors (80, 82, 84) are formed in which the conductive pillars are gates (60, 62, 64). Other halogens, especially chlorine, may be substituted for the fluorine.

    Abstract translation: 通过图案化用于形成晶体管（80,82,84）的栅极（60,62,64）的导电层（16）来制造半导体器件（50）。 用于形成栅极（60,62,64）的工艺具有将导电层（16）覆盖的光刻胶（54,56,58）图案化的步骤。 修整图案化的光致抗蚀剂（54,56,58），使其宽度减小。 将氟，优选F2施加到修剪的光致抗蚀剂（54,56,58）以增加其硬度和对导电层的选择性。 使用经修整的和氟化的光致抗蚀剂（54,56,58）作为掩模，蚀刻导电层（16）以形成用作栅极（60,62,64）的导电特征。 形成晶体管（80,82,84），其中导电柱是门（60,62,64）。 其他卤素，特别是氯可以代替氟。

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