PROCESS OF FORMING AN ELECTRODE ON THE FRONT-SIDE OF A NON-TEXTURED SILICON WAFER
    4.
    发明申请
    PROCESS OF FORMING AN ELECTRODE ON THE FRONT-SIDE OF A NON-TEXTURED SILICON WAFER 审中-公开
    在非纹理硅膜的正面形成电极的工艺

    公开(公告)号:WO2011049820A1

    公开(公告)日:2011-04-28

    申请号:PCT/US2010/052782

    申请日:2010-10-15

    IPC分类号: H01B1/22

    摘要: A process for the production of a front-side electrode on a non-textured silicon wafer having an ARC layer on its front-side, wherein the front-side electrode is printed from a silver paste and fired, wherein the silver paste comprises (i) an inorganic content comprising (a) 93 to 95 wt.-% of electrically conductive metal powder comprising 90 to 100 wt.-% of silver powder, (b) 1 to 7 wt.-% of at least one glass frit, (c) 0 to 6 wt.-% of at least one solid inorganic oxide and (d) 0 to 6 wt.-% of at least one compound capable of forming a solid inorganic oxide on firing and (ii) an organic vehicle, wherein the weight ratio between the electrically conductive metal powder and the glass frit plus solid inorganic oxide is >13 to 19 in the fired state.

    摘要翻译: 一种用于在其前侧具有ARC层的非纹理硅晶片上制造前侧电极的方法,其中所述前侧电极由银膏印刷并烧制,其中所述银膏包括(i )包含(a)93至95重量%的包含90至100重量%银粉的导电金属粉末的无机含量,(b)1至7重量%的至少一个玻璃料,( c)0至6重量%的至少一种固体无机氧化物和(d)0至6重量%的至少一种能够在烧制时形成固体无机氧化物的化合物和(ii)有机载体,其中 导电金属粉末与玻璃料加固体无机氧化物的重量比在烧制状态下> 13〜19℃。