公开(公告)号：WO2009114584A1

公开(公告)日：2009-09-17

申请号：PCT/US2009/036738

申请日：2009-03-11

Applicant: E. I. DU PONT DE NEMOURS AND COMPANY ,  YOUNG, Richard, John Sheffield ,  ROSE, Michael ,  PRINCE, Alistair, Graeme

Inventor： YOUNG, Richard, John Sheffield ,  ROSE, Michael ,  PRINCE, Alistair, Graeme

IPC: H01B1/22

CPC classification number: H01B1/22 ,  H01L31/022425 ,  Y02E10/50

Abstract: Disclosed are aluminum pastes comprising particulate aluminum, a zinc-organic component and an organic vehicle and their use in forming p- type aluminum back electrodes of silicon solar cells.

Abstract translation: 公开了包含微粒铝，锌 - 有机组分和有机载体的铝浆，以及其用于形成硅太阳能电池的p-型铝背电极的用途。

公开(公告)号：WO2013023169A8

公开(公告)日：2013-11-14

申请号：PCT/US2012050413

申请日：2012-08-10

Applicant: DU PONT ,  HANG KENNETH WARREN ,  LAUDISIO GIOVANNA ,  PRINCE ALISTAIR GRAEME ,  WANG YUELI ,  WATT ROSALYNNE SOPHIE

Inventor： HANG KENNETH WARREN ,  LAUDISIO GIOVANNA ,  PRINCE ALISTAIR GRAEME ,  WANG YUELI ,  WATT ROSALYNNE SOPHIE

IPC: H01L31/0224 ,  C03C8/02 ,  C03C8/18 ,  H01B1/16 ,  H01B1/22

CPC classification number: H01L31/022425 ,  C03C8/04 ,  C03C8/06 ,  C03C8/18 ,  H01B1/16 ,  H01B1/22 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: An aluminium paste having no or only poor fire-through capability comprises aluminium particles, at least one glass frit containing 0.5 to 15 wt.% SiO2, 0.3 to 10 wt.% Al2O3 and 67 to 75 wt.% Bi2O3 (the weight percentages being based on the total weight of the glass frit) and an organic vehicle. The aluminium paste is used in the manufacture of aluminium back electrodes of PERC (passivated emitter and rear contact) silicon solar cells, wherein the paste is applied on a perforated dielectric passivation layer on the back-side of a silicon wafer and subsequently dried and fired or, alternatively, wherein the paste is applied on a non-perforated passivation layer on the back-side of a silicon wafer, dried and fired and the aluminium layer and the passivation layer are subsequently laser fired to produce perforations in the passivation layer and to form local BSF (back surface field) contacts.

Abstract translation: 没有或仅有差的穿火能力的铝浆包括铝颗粒，至少一种含有0.5至15重量％SiO 2，0.3至10重量％的Al 2 O 3和67至75重量％的Bi 2 O 3的玻璃料（重量百分数为 基于玻璃料的总重量）和有机载体。 铝浆用于制造PERC（钝化发射器和后接触）硅太阳能电池的铝背电极，其中将糊剂施加在硅晶片背面上的穿孔电介质钝化层上，随后干燥和烧制 或者替代地，其中将糊剂施加在硅晶片的背侧上的非穿孔钝化层上，干燥和烧制，随后激光烧制铝层和钝化层以在钝化层中产生穿孔，并且 形成本地BSF（背面场）接触。

公开(公告)号：WO2011097606A2

公开(公告)日：2011-08-11

申请号：PCT/US2011/023985

申请日：2011-02-08

Applicant: E. I. du Pont de Nemours and Company ,  HANG, Kenneth, Warren ,  LAUDISIO, Giovanna ,  PRINCE, Alistair, Graeme ,  YOUNG, Richard, John, Sheffield

Inventor： HANG, Kenneth, Warren ,  LAUDISIO, Giovanna ,  PRINCE, Alistair, Graeme ,  YOUNG, Richard, John, Sheffield

IPC: H01L31/0224

CPC classification number: H01L31/02245 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  Y02E10/50

Abstract: A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900C, wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.

Abstract translation: 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供n型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） p型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 涂布的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，导电性金属糊料没有或仅有差的穿透能力，并且至少包括（a）至少 选自银，铜和镍的一种颗粒状导电金属，（b）至少一种颗粒型p型掺杂剂，和（c）有机载体。

公开(公告)号：WO2011066294A1

公开(公告)日：2011-06-03

申请号：PCT/US2010/057824

申请日：2010-11-23

Applicant: E. I. DU PONT DE NEMOURS AND COMPANY ,  PRINCE, Alistair, Graeme ,  YOUNG, Richard, John, Sheffield ,  LAUDISIO, Giovanna ,  COULTART, Gary ,  HANG, Kenneth, Warren ,  WHITTLE, Ben

Inventor： PRINCE, Alistair, Graeme ,  YOUNG, Richard, John, Sheffield ,  LAUDISIO, Giovanna ,  COULTART, Gary ,  HANG, Kenneth, Warren ,  WHITTLE, Ben

IPC: H01B1/22

CPC classification number: H01B1/22 ,  H01L31/022425 ,  Y02E10/50

Abstract: An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611°C and containing 11 to 33 wt.-% of SiO 2 , >0 to 7 wt.-% of AI 2 O 3 and 2 to 10 wt.-% of B 2 O 3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636°C and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO 2 , 2 to 6 wt.-% of AI 2 O 3 and 6 to 9 wt.-% of B 2 O 3 , useful in the production of aluminum back electrodes of PERC silicon solar cells.

Abstract translation: 一种包含微粒铝，有机载体和玻璃料的铝糊料，其选自（i）软化点温度在550-6 611℃范围内且含有11至33重量％SiO 2的无铅玻璃料， 0〜7重量％的Al 2 O 3和2〜10重量％的B 2 O 3，（ii）软化点温度为571〜636℃的含铅玻璃料，含有53〜57重量％ PbO的百分比，25-29重量％的SiO 2，2至6重量％的Al 2 O 3和6至9重量％的B 2 O 3，可用于生产PERC硅太阳能电池的铝背电极。

公开(公告)号：WO2010124161A1

公开(公告)日：2010-10-28

申请号：PCT/US2010/032168

申请日：2010-04-23

Applicant: E. I. DU PONT DE NEMOURS AND COMPANY ,  PRINCE, Alistair, Graeme ,  YOUNG, Richard, John, Sheffield ,  LAUDISIO, Giovanna ,  COULTART, Gary

Inventor： PRINCE, Alistair, Graeme ,  YOUNG, Richard, John, Sheffield ,  LAUDISIO, Giovanna

IPC: H01B1/02 ,  H01B1/16 ,  H01B1/22 ,  B23K35/30

CPC classification number: B23K1/0016 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/0261 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/302 ,  B23K35/3033 ,  B23K35/3612 ,  B23K2201/40 ,  C22C1/002 ,  H01B1/22 ,  H01L31/022425 ,  Y02E10/50

Abstract: Metal pastes comprising (a) at least one electrically conductive metal powder selected from the group consisting of silver, copper, and nickel, (b) at least one p-type silicon alloy powder, and (c) an organic vehicle, wherein the p-type silicon alloy is selected from the group consisting of alloys comprising silicon and boron, alloys comprising silicon and aluminum and alloys comprising silicon, boron and aluminum.

Abstract translation: 金属浆料包括（a）至少一种选自银，铜和镍的导电金属粉末，（b）至少一种p型硅合金粉末和（c）有机载体，其中p 型硅合金选自包括硅和硼的合金，包含硅和铝的合金以及包含硅，硼和铝的合金。

公开(公告)号：WO2011163534A1

公开(公告)日：2011-12-29

申请号：PCT/US2011/041721

申请日：2011-06-24

Applicant: E. I. DU PONT DE NEMOURS AND COMPANY ,  PRINCE, Alistair, Graeme ,  WHITTLE, Ben

Inventor： PRINCE, Alistair, Graeme ,  WHITTLE, Ben

IPC: H01B1/22

CPC classification number: H01B1/16 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/547

Abstract: A process for the formation of a silver back anode of a silicon solar cell wherein a silver paste comprising particulate silver, an organic vehicle and glass frit comprising at least one antimony oxide is applied in a silver back anode pattern on the back-side of a p-type silicon wafer having an aluminum back-side metallization and fired.

Abstract translation: 用于形成硅太阳能电池的银背阳极的方法，其中将包含颗粒状银，有机载体和包含至少一种氧化锑的玻璃料的银膏施加到银背阳极图案的背面 具有铝背面金属化的p型硅晶片并烧制。

公开(公告)号：WO2011066300A1

公开(公告)日：2011-06-03

申请号：PCT/US2010/057834

申请日：2010-11-23

Applicant: E. I. DU PONT DE NEMOURS AND COMPANY ,  PRINCE, Alistair, Graeme ,  YOUNG, Richard, John, Sheffield ,  LAUDISIO, Giovanna ,  COULTART, Gary ,  HANG, Kenneth, Warren ,  WHITTLE, Ben

Inventor： PRINCE, Alistair, Graeme ,  YOUNG, Richard, John, Sheffield ,  LAUDISIO, Giovanna ,  COULTART, Gary ,  HANG, Kenneth, Warren ,  WHITTLE, Ben

IPC: H01B1/22

CPC classification number: H01B1/22 ,  B22F1/0059 ,  B22F1/007 ,  B22F7/04 ,  B22F7/08 ,  B22F2007/047 ,  C03C8/10 ,  C03C8/12 ,  H01B1/16 ,  H01L31/022425 ,  H01L31/0264 ,  H01L31/1884 ,  H01L2924/00 ,  H01L2924/0002 ,  Y02E10/50 ,  Y02E10/52

Abstract: A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a silicon wafer having an ARC layer on its front-side and a perforated dielectric passivation layer on its back-side, (2) applying and drying a silver paste to form a silver back electrode pattern on the perforated dielectric passivation layer on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900°C, wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.

Abstract translation: 一种用于形成PERC硅太阳能电池的导电银背电极的方法，包括以下步骤：（1）在其前侧提供具有ARC层的硅晶片及其背面上的穿孔电介质钝化层， （2）在硅晶片的背面的有孔电介质钝化层上施加和干燥银膏以形成银背电极图案，（3）烧制干燥的银浆，由此晶片达到峰值温度 700至900℃，其中银膏没有或仅仅具有差的穿透能力，并且包括颗粒状银和有机载体。

公开(公告)号：WO2009052266A1

公开(公告)日：2009-04-23

申请号：PCT/US2008/080133

申请日：2008-10-16

Applicant: E. I. DU PONT DE NEMOURS AND COMPANY ,  YOUNG, Richard, John, Sheffield ,  ROSE, Michael ,  MIKESKA, Kurt, Richard ,  CARROLL, Alan, Frederick ,  HANG, Kenneth, Warren ,  PRINCE, Alistair, Graeme

Inventor： YOUNG, Richard, John, Sheffield ,  ROSE, Michael ,  MIKESKA, Kurt, Richard ,  CARROLL, Alan, Frederick ,  HANG, Kenneth, Warren ,  PRINCE, Alistair, Graeme

IPC: H01B1/16 ,  H01B1/22 ,  C03C8/18 ,  C03C17/00 ,  C03C17/06

CPC classification number: H01B1/22 ,  C03C8/14 ,  C03C8/18 ,  H01B1/16 ,  H01L21/2225 ,  H01L31/022425 ,  H05K1/092 ,  Y10T428/31536 ,  Y10T428/31663 ,  Y10T428/31678

Abstract: Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device.

Abstract translation: 这里描述的是用于太阳能电池装置正面的硅半导体器件和导电银膏。

公开(公告)号：WO2013023169A1

公开(公告)日：2013-02-14

申请号：PCT/US2012/050413

申请日：2012-08-10

Applicant: E. I. DU PONT DE NEMOURS AND COMPANY ,  HANG, Kenneth Warren ,  LAUDISIO, Giovanna ,  PRINCE, Alistair Graeme ,  WANG, Yueli ,  WATT, Rosalynne Sophie

Inventor： HANG, Kenneth Warren ,  LAUDISIO, Giovanna ,  PRINCE, Alistair Graeme ,  WANG, Yueli ,  WATT, Rosalynne Sophie

IPC: H01L31/0224 ,  H01B1/16 ,  H01B1/22 ,  C03C8/18 ,  C03C8/02

CPC classification number: H01L31/022425 ,  C03C8/04 ,  C03C8/06 ,  C03C8/18 ,  H01B1/16 ,  H01B1/22 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: An aluminium paste having no or only poor fire-through capability comprises aluminium particles, at least one glass frit containing 0.5 to 15 wt.% SiO 2 , 0.3 to 10 wt.% Al203 and 67 to 75 wt.% Bi 2 O 3 (the weight percentages being based on the total weight of the glass frit) and an organic vehicle. The aluminium paste is used in the manufacture of aluminium back electrodes of PERC (passivated emitter and rear contact) silicon solar cells, wherein the paste is applied on a perforated dielectric passivation layer on the back-side of a silicon wafer and subsequently dried and fired or, alternatively, wherein the paste is applied on a non-perforated passivation layer on the back-side of a silicon wafer, dried and fired and the aluminium layer and the passivation layer are subsequently laser fired to produce perforations in the passivation layer and to form local BSF (back surface field) contacts.

Abstract translation: 没有或仅仅具有差的穿透能力的铝浆包括铝颗粒，至少一种含有0.5至15重量％SiO 2，0.3至10重量％Al 2 O 3和67至75重量％Bi 2 O 3的玻璃料（重量百分数为 基于玻璃料的总重量）和有机载体。 铝浆用于制造PERC（钝化发射器和后接触）硅太阳能电池的铝背电极，其中将糊剂施加在硅晶片背面上的穿孔电介质钝化层上，随后干燥和烧制 或者替代地，其中将糊剂施加在硅晶片的背侧上的非穿孔钝化层上，干燥和烧制，随后激光烧制铝层和钝化层以在钝化层中产生穿孔，并且 形成本地BSF（背面场）接触。

公开(公告)号：WO2011097606A3

公开(公告)日：2012-08-23

申请号：PCT/US2011023985

申请日：2011-02-08

Applicant: DU PONT ,  HANG KENNETH WARREN ,  LAUDISIO GIOVANNA ,  PRINCE ALISTAIR GRAEME ,  YOUNG RICHARD JOHN SHEFFIELD

Inventor： HANG KENNETH WARREN ,  LAUDISIO GIOVANNA ,  PRINCE ALISTAIR GRAEME ,  YOUNG RICHARD JOHN SHEFFIELD

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/02245 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  Y02E10/50

Abstract: A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900C, wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.

Abstract translation: 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供n型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） p型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 涂布的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，导电性金属糊料没有或仅有差的穿透能力，并且至少包括（a）至少 选自银，铜和镍的一种颗粒状导电金属，（b）至少一种颗粒型p型掺杂剂，和（c）有机载体。