Abstract:
Techniques for changing temperature of a platen are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for changing temperature of a platen comprising a platen and one or more movable thermal pads comprising one or more thermal fluid channels to carry a thermal fluid configured to affect a temperature of the platen.
Abstract:
An apparatus and method of handling substrates is disclosed. A detecting system, capable of determining whether a substrate is tilted in. relation to the platen, is positioned proximate to the substrate. In some embodiments, the detecting system is a distance measuring system. In other embodiments, it is an angle sensor. The detecting system is in communication with a controller, which, in turn, is in communication with a substrate handling robot. If, based on information received from the detecting system, the controller determines that the substrate is tilted beyond an acceptable range, it is assumed that the substrate has remained attached to the platen. In such a case, the substrate handling robot does not attempt to remove it from the platen. In this way, the substrate is not damaged.
Abstract:
Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature- controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
Abstract:
Techniques for changing temperature of a platen are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for changing temperature of a platen comprising a platen and one or more movable thermal pads comprising one or more thermal fluid channels to carry a thermal fluid configured to affect a temperature of the platen.
Abstract:
An apparatus and method of handling substrates is disclosed. A detecting system, capable of determining whether a substrate is tilted in. relation to the platen, is positioned proximate to the substrate. In some embodiments, the detecting system is a distance measuring system. In other embodiments, it is an angle sensor. The detecting system is in communication with a controller, which, in turn, is in communication with a substrate handling robot. If, based on information received from the detecting system, the controller determines that the substrate is tilted beyond an acceptable range, it is assumed that the substrate has remained attached to the platen. In such a case, the substrate handling robot does not attempt to remove it from the platen. In this way, the substrate is not damaged.
Abstract:
Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature- controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.