公开(公告)号：WO2009120631A3

公开(公告)日：2010-01-07

申请号：PCT/US2009037968

申请日：2009-03-23

Applicant: APPLIED MATERIALS INC ,  WIJEKOON KAPILA ,  MISHRA ROHIT ,  STEWART MICHAEL P ,  WEIDMAN TIMOTHY ,  PONNEKANTI HARI ,  HOLTAM TRISTAN R

Inventor： WIJEKOON KAPILA ,  MISHRA ROHIT ,  STEWART MICHAEL P ,  WEIDMAN TIMOTHY ,  PONNEKANTI HARI ,  HOLTAM TRISTAN R

IPC: H01L31/042 ,  H01L21/302

CPC classification number: H01L31/077 ,  H01L21/30608 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0392 ,  H01L31/0687 ,  H01L31/075 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548

Abstract: Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 µm to about 10 µm on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 µm to about 8 µm on the substrate.

Abstract translation: 提供了表面纹理化晶体硅衬底的方法。 在一个实施方案中，该方法包括提供晶体硅衬底，用包含润湿剂的碱性溶液润湿衬底，以及在衬底上形成具有约1μm至约10μm深度结构的织构化表面。 在另一个实施例中，执行衬底纹理过程的方法包括提供晶体硅衬底，在HF水溶液中预清洗衬底，用包含聚乙二醇（PEG）化合物的KOH水溶液润湿衬底，并形成织构表面 具有在基板上具有约3μm至约8μm的深度的结构。

公开(公告)号：WO2010042577A2

公开(公告)日：2010-04-15

申请号：PCT/US2009/059782

申请日：2009-10-07

Applicant: APPLIED MATERIALS, INC. ,  PORTHOUSE, Keith ,  BORDEN, Peter, G. ,  HOLTAM, Tristan, R. ,  ZHOU, Lisong ,  LATCHFORD, Ian, Scott ,  AQUI, Derek ,  SHAH, Vinay

Inventor： PORTHOUSE, Keith ,  BORDEN, Peter, G. ,  HOLTAM, Tristan, R. ,  ZHOU, Lisong ,  LATCHFORD, Ian, Scott ,  AQUI, Derek ,  SHAH, Vinay

IPC: H01L31/042 ,  H01L21/677

CPC classification number: H01L21/67236 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67213 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

Abstract: The present invention generally provides a batch substrate processing system, or cluster tool, for in-situ processing of a film stack used to form regions of a solar cell device. In one configuration, the film stack formed on each of the substrates in the batch contains one or more silicon-containing layers and one or more metal layers that are deposited and further processed within the various chambers contained in the substrate processing system. In one embodiment, a batch of solar cell substrates is simultaneously transferred in a vacuum or inert environment to prevent contamination from affecting the solar cell formation process.

Abstract translation: 本发明通常提供用于原位处理用于形成太阳能电池装置区域的薄膜叠层的批量基板处理系统或集群工具。 在一种构造中，在批次中形成在每个基板上的薄膜叠层包含一个或多个含硅层和一个或多个金属层，其在包含在基板处理系统中的各个室内被沉积和进一步处理。 在一个实施例中，一批太阳能电池基板在真空或惰性环境中同时转移，以防止污染影响太阳能电池的形成过程。

公开(公告)号：WO2010042577A3

公开(公告)日：2010-07-15

申请号：PCT/US2009059782

申请日：2009-10-07

Applicant: APPLIED MATERIALS INC ,  PORTHOUSE KEITH ,  BORDEN PETER G ,  HOLTAM TRISTAN R ,  ZHOU LISONG ,  LATCHFORD IAN SCOTT ,  AQUI DEREK ,  SHAH VINAY

Inventor： PORTHOUSE KEITH ,  BORDEN PETER G ,  HOLTAM TRISTAN R ,  ZHOU LISONG ,  LATCHFORD IAN SCOTT ,  AQUI DEREK ,  SHAH VINAY

IPC: H01L31/042 ,  H01L21/677

CPC classification number: H01L21/67236 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67213 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

Abstract: The present invention generally provides a batch substrate processing system, or cluster tool, for in-situ processing of a film stack used to form regions of a solar cell device. In one configuration, the film stack formed on each of the substrates in the batch contains one or more silicon-containing layers and one or more metal layers that are deposited and further processed within the various chambers contained in the substrate processing system. In one embodiment, a batch of solar cell substrates is simultaneously transferred in a vacuum or inert environment to prevent contamination from affecting the solar cell formation process.

Abstract translation: 本发明通常提供用于原位处理用于形成太阳能电池器件区域的薄膜叠层的批量衬底处理系统或群集工具。 在一种配置中，在批料中的每个衬底上形成的膜堆包含一个或多个含硅层和一个或多个金属层，所述金属层在包含在衬底处理系统中的各个室内沉积并进一步处理。 在一个实施例中，一批太阳能电池基板同时在真空或惰性环境中转移以防止污染影响太阳能电池形成过程。

公开(公告)号：WO2009120631A2

公开(公告)日：2009-10-01

申请号：PCT/US2009/037968

申请日：2009-03-23

Applicant: APPLIED MATERIALS, INC. ,  WIJEKOON, Kapila ,  MISHRA, Rohit ,  STEWART, Michael, P. ,  WEIDMAN, Timothy ,  PONNEKANTI, Hari ,  HOLTAM, Tristan, R.

Inventor： WIJEKOON, Kapila ,  MISHRA, Rohit ,  STEWART, Michael, P. ,  WEIDMAN, Timothy ,  PONNEKANTI, Hari ,  HOLTAM, Tristan, R.

IPC: H01L31/042 ,  H01L21/302

CPC classification number: H01L31/077 ,  H01L21/30608 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0392 ,  H01L31/0687 ,  H01L31/075 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548

Abstract: Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 µm to about 10 µm on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 µm to about 8 µm on the substrate.

Abstract translation: 提供了表面纹理化晶体硅衬底的方法。 在一个实施方案中，该方法包括提供晶体硅衬底，用包含润湿剂的碱性溶液润湿衬底，以及在衬底上形成具有约1μm至约10μm深度结构的织构化表面。 在另一个实施例中，执行衬底纹理过程的方法包括提供晶体硅衬底，在HF水溶液中预清洗衬底，用包含聚乙二醇（PEG）化合物的KOH水溶液润湿衬底，并形成织构表面 具有在基板上具有约3μm至约8μm的深度的结构。