Abstract:
An abrasive tool for conditioning CMP pads includes abrasive grains coupled to a substrate through a metal bond and a coating, e.g., a fluorine-doped nanocomposite coating. The abrasive grains can be arranged in a self-avoiding random distribution. In one implementation, an abrasive tool includes a coated plate and a coated abrasive article that has two abrading surfaces. Other implementations related to a process for producing an abrasive tool that includes a coating at one or more of its surfaces. Also described are methods for dressing a CMP pad.
Abstract:
An abrasive tool for conditioning CMP pads includes abrasive grains coupled to a substrate through a metal bond and a coating, e.g., a fluorine-doped nanocomposite coating. The abrasive grains can be arranged in a self-avoiding random distribution. In one implementation, an abrasive tool includes a coated plate and a coated abrasive article that has two abrading surfaces. Other implementations related to a process for producing an abrasive tool that includes a coating at one or more of its surfaces. Also described are methods for dressing a CMP pad.
Abstract:
Tools for conditioning chemical mechanical planarization (CMP) pads comprise a substrate with abrasive particles coupled to at least one surface. The tools can have various particles and bond configurations. For instance, abrasive particles may be bonded (e.g., brazed or other metal bond technique) to one side, or to front and back sides. Alternatively, abrasive particles are bonded to a front side, and filler particles coupled to a back side. The abrasive particles can form a pattern (e.g., hexagonal) and have particle sizes that are sufficiently small to penetrate pores of a CMP pad during conditioning, leading to fewer defects on wafers polished with the conditioned CMP pad. Grain bonding can be accomplished using brazing films, although other metal bonds may be used as well. Also, balanced bond material (e.g., braze on both sides) allows for low out-of-flatness value.
Abstract:
A study of several key conditioner design parameters has been conducted. The purpose was to improve conditioner performance by considering factors such as wafer defects, pad life, and conditioner life. For this study, several key conditioner design parameters such as diamond type, diamond size, diamond shape, diamond concentration and distribution, were selected to determine their effect on CMP performance and process stability. Experimental validations were conducted. Conditioner specifications were matched to each specific CMP environment (intended application) in order to improve process stability and CMP performance particularly for emerging technology nodes. Several conditioner designs were developed and run successfully in the field. Significant planarity improvement for a 300 mm CMP process was achieved in accordance with one embodiment, and an increase of pad life and wafer polish rate was simultaneously achieved with another embodiment.