SRAM BASED ADDRESS GENERATOR FOR EACH LAYER AND ADDRESS GENERATOR INCLUDING THE SAME
    2.
    发明申请
    SRAM BASED ADDRESS GENERATOR FOR EACH LAYER AND ADDRESS GENERATOR INCLUDING THE SAME 审中-公开
    基于SRAM的地址发生器,用于每个层和地址发生器,包括它们

    公开(公告)号:WO2011071273A2

    公开(公告)日:2011-06-16

    申请号:PCT/KR2010/008595

    申请日:2010-12-02

    CPC classification number: G06F17/30982 G11C15/00

    Abstract: An SRAM based address generator is provided, which can perform a TCAM function that returns an address of data when the data is input. The address generator includes n bit position tables receiving n input sub-words each of which is composed of w bits and outputting bit position data of addresses indicated by (w-b) bits of the respective sub-words, last index data, and bit values indicated by b bits of the sub-words among the bit position data; a first AND operation unit receiving and performing an AND operation of the n bit values and outputting n enable signals; n address generators receiving the bit position data, the last index data, and the enable signals and outputting address data; n address position tables receiving the address data and outputting address position data of the addresses indicated by the address data; and a second AND operation unit receiving and performing an AND operation of the n address position data and outputting first matching addresses.

    Abstract translation: 提供了一种基于SRAM的地址生成器,可以执行在输入数据时返回数据地址的TCAM功能。 地址发生器包括n位位置表,其接收n个输入子字,每个n个输入子字由w位组成,并且输出由各个子字的(wb)位指示的地址的位位置数据,最后的索引数据和指示的位值 比特位数据中的b位的子字; 第一AND运算单元接收并执行n位值的AND运算并输出n个使能信号; n个地址生成器接收位位置数据,最后的索引数据和使能信号并输出​​地址数据; 接收地址数据的n个地址位置表,并输出由地址数据指示的地址的地址位置数据; 以及第二AND运算单元,接收并执行n个地址位置数据的AND运算并输出第一匹配地址。

    SYSTEM AND METHOD OF INTERNET GROUP MANAGEMENT FOR MULTICAST PUSH IN PASSIVE ACCESS NETWORKS
    3.
    发明申请
    SYSTEM AND METHOD OF INTERNET GROUP MANAGEMENT FOR MULTICAST PUSH IN PASSIVE ACCESS NETWORKS 审中-公开
    用于被动访问网络中的组播推送的因特网组管理的系统和方法

    公开(公告)号:WO2010128739A3

    公开(公告)日:2010-11-11

    申请号:PCT/KR2009/006133

    申请日:2009-10-22

    Abstract: Disclosed is an Internet group management system of a push-type multicast in a passive access network, and a method thereof. The Internet group management system of a push-type multicast supporting Internet group management with respect to a packet stream simultaneously being transmitted to a subscriber accessing the same node via a passive access network where at least one subscriber accesses a single node, the system including an input packet classifying unit (210) to sort a multimedia contents packet corresponding to an IPTV contents transmission packet from the packet stream, and a program managing unit (230) to construct a broadcasting program table having information of the sorted multimedia contents packet, to determine, based on the constructed broadcasting program table, a reception condition of a requested program that is requested by a user, and to output a multimedia contents packet corresponding to the requested program.

    Abstract translation: 公开了一种无源接入网络中的推送式多播的因特网组管理系统及其方法。 支持互联网组管理的互联网组管理关于分组流的互联网组管理系统同时经由无源接入网络被发送到接入同一节点的订户,其中至少一个订户接入单个节点,所述系统包括 输入分组分类单元(210),用于从分组流中对与IPTV内容传输分组对应的多媒体内容分组进行分类;程序管理单元(230),用于构建具有分类的多媒体内容分组的信息的广播节目表,以确定 基于所构建的广播节目表,确定用户所请求的节目的接收条件,并输出对应于所请求的节目的多媒体内容包。

    SEMICONDUCTOR CHIP AND METHOD FOR GENERATING DIGITAL VALUE USING PROCESS VARIATION
    4.
    发明申请
    SEMICONDUCTOR CHIP AND METHOD FOR GENERATING DIGITAL VALUE USING PROCESS VARIATION 审中-公开
    半导体芯片和使用过程变化生成数字值的方法

    公开(公告)号:WO2010123185A1

    公开(公告)日:2010-10-28

    申请号:PCT/KR2009/007130

    申请日:2009-12-02

    Abstract: Provided is a semiconductor chip to generate an unique identification key. The semiconductor chip (100) includes a first inverter (110) having a first logic thresholdpa second inverter (120) having a second logic threshold, and a first switch (130). The first switch (130) includes a first terminal and a second terminal, and may short or open a connection between the first terminal and the second terminal according to a first input voltage value. An input terminal of the first inverter (110), an output terminal, and the first terminal of the first switch (130) are connected to a first node (101 ). An output terminal of the first inverter (110), an input terminal of the second inverter (120), and the second terminal of the first switch (130) are connected to a second node (102). A second switch (150) and a third switch (140) may also be embodies using a transmission gate TG.

    Abstract translation: 提供了一种用于生成唯一识别密钥的半导体芯片。 半导体芯片(100)包括具有第二逻辑阈值的第一逻辑阈值第二反相器(120)的第一反相器(110)和第一开关(130)。 第一开关(130)包括第一端子和第二端子,并且可以根据第一输入电压值短路或断开第一端子和第二端子之间的连接。 第一逆变器(110)的输入端子,输出端子和第一开关(130)的第一端子连接到第一节点(101)。 第一逆变器(110)的输出端子,第二逆变器(120)的输入端子和第一开关(130)的第二端子连接到第二节点(102)。 也可以使用传输门TG来体现第二开关(150)和第三开关(140)。

    ORGANIC/INORGANIC COMPOSITE COMPRISING THREE- DIMENSIONAL CARBON NANOTUBE NETWORKS, METHOD FOR PREPARING THE ORGANIC/INORGANIC COMPOSITE AND ELECTRONIC DEVICE USING THE ORGANIC/INORGANIC COMPOSITE
    5.
    发明申请
    ORGANIC/INORGANIC COMPOSITE COMPRISING THREE- DIMENSIONAL CARBON NANOTUBE NETWORKS, METHOD FOR PREPARING THE ORGANIC/INORGANIC COMPOSITE AND ELECTRONIC DEVICE USING THE ORGANIC/INORGANIC COMPOSITE 审中-公开
    包含三维碳纳米管网络的有机/无机复合材料,使用有机/无机复合材料制备有机/无机复合材料和电子器件的方法

    公开(公告)号:WO2009154379A2

    公开(公告)日:2009-12-23

    申请号:PCT/KR2009/003185

    申请日:2009-06-15

    Abstract: An organic/inorganic composite is provided. The organic/inorganic composite comprises a silicon (Si) substrate formed with nanorods or nanoholes and three-dimensional networks of carbon nanotubes (CNTs) grown horizontally in parallel and suspended between the adjacent nanorods or inside the nanoholes. In the organic/inorganic composite, metal catalysts can be uniformly formed on the nanorods or inside the nanoholes, irrespective of the height of the nanorods or the depth of the nanoholes and the shape and aspect ratio of the nanorods or nanoholes. In addition, the carbon nanotubes grow in a three-dimensional network structure directly over the entire surface of the nanorods or the whole inner surface of the nanoholes and are directly connected to the base electrodes. With this configuration, the three-dimensional carbon nanotube networks are highly dense per unit volume, and the organic/inorganic composite is highly electrically conductive and has a large surface area. Therefore, the use of the organic/inorganic composite enables the fabrication of an electronic device with greatly improved efficiency. Further provided are a method for preparing the organic/inorganic composite and an electronic device fabricated using the organic/inorganic composite.

    Abstract translation: 提供有机/无机复合材料。 有机/无机复合材料包括由纳米棒或纳米孔形成的硅(Si)衬底和平行水平并且悬浮在相邻纳米棒之间或纳米孔内的碳纳米管(CNT)的三维网络。 在有机/无机复合材料中,不管纳米棒的高度或纳米孔的深度以及纳米棒或纳米孔的形状和长宽比如何,金属催化剂可以均匀地形成在纳米棒上或纳米孔内。 此外,碳纳米管直接在纳米棒的整个表面或纳米孔的整个内表面上生长在三维网络结构中,并且直接连接到基极。 利用这种结构,三维碳纳米管网络每单位体积高密度,有机/无机复合材料具有高导电性并具有大的表面积。 因此,通过使用有机/无机复合体,能够大幅提高效率的电子设备的制造。 进一步提供了制备有机/无机复合材料的方法和使用有机/无机复合材料制造的电子器件。

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