INSULATING MATERIAL COMPRISING NONWOVEN WEBS
    1.
    发明申请
    INSULATING MATERIAL COMPRISING NONWOVEN WEBS 审中-公开
    绝缘材料包括非织造布

    公开(公告)号:WO2013032912A1

    公开(公告)日:2013-03-07

    申请号:PCT/US2012/052290

    申请日:2012-08-24

    IPC分类号: D04H3/16 D04H3/011

    CPC分类号: D04H3/011 D04H3/16

    摘要: Insulating materials are provided, the insulating materials comprising a nonwoven web comprising a plurality of continuous spunbonded polyester bicomponent fibers. Each of the plurality of bicomponent fibers comprises a) from about 20% by weight to about 80% by weight of poly(ethylene terephthalate) in a core, and b) from about 80% by weight to about 20% by weight of poly(trimethylene terephathalate) in a sheath surrounding the core, wherein the amounts in percent by weight are based on the total weight of each of the plurality of bicomponent fibers. Also provided are electrical apparatuses comprising the insulating materials and a dielectric fluid, as well as a dielectic material comprising the nonwoven web impregnated with at least 10 weight percent of a dielectric fluid.

    摘要翻译: 提供绝缘材料,绝缘材料包括非织造纤维网,其包含多个连续纺粘聚酯双组分纤维。 多个双组分纤维中的每一个包含a)核心中约20重量%至约80重量%的聚对苯二甲酸乙二醇酯,和b)约80重量%至约20重量%的聚 三亚甲基对苯二甲酸酯),其中以重量百分比计的量基于多种双组分纤维中的每一种的总重量。 还提供了包括绝缘材料和介电流体的电气设备,以及包含浸渍有至少10重量%的介电流体的非织造纤维网的介电材料。

    SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS
    2.
    发明申请
    SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS 审中-公开
    传感器使用高电子移动晶体管

    公开(公告)号:WO2009151705A3

    公开(公告)日:2010-03-04

    申请号:PCT/US2009037767

    申请日:2009-03-20

    IPC分类号: H01L29/778 G01N27/00

    CPC分类号: G01N27/414

    摘要: Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEM Ts), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PIIEMTs, InAlAs/InGaAs PHEMTs, Sb based HEMTs, or InAs based I IEMTs, the HEMTs having functionalization at a gate surface with target receptors. The target receptors allow sensitivity to targets (or substrates) for detecting breast cancer, prostate cancer, kidney injury, chloride, glucose, metals or pEI where a signal is generated by the HEMl when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.

    摘要翻译: 本发明的实施例包括包含AlGaAs / GaAs高电子迁移率晶体管(HEM Ts),inGaP / GaAs HEMT的传感器。 InAlAs / InGaAs HEMT,AlGaAs / InGaAs PIIEMT,InAlAs / InGaAs PHEMTs,Sb基HEMT或基于IAs的I IEMT,HEMT在具有目标受体的门表面具有官能化。 目标受体允许敏感性用于检测乳腺癌,前列腺癌,肾损伤,氯化物,葡萄糖,金属或pEI的目标(或底物),其中当溶液与传感器接触时,HEM1产生信号。 解决方案可以是血液,唾液,尿液,呼吸冷凝液或任何怀疑含有传感器特定分析物的溶液。

    SENSORS USING AIGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS
    3.
    发明申请
    SENSORS USING AIGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS 审中-公开
    传感器使用AIGAN / GAN高电子移动晶体管

    公开(公告)号:WO2009039298A2

    公开(公告)日:2009-03-26

    申请号:PCT/US2008/076885

    申请日:2008-09-18

    IPC分类号: G01N27/30 G01N27/00 H01L29/78

    摘要: Embodiments of the invention include sensors comprising AlGaN/GaN high electron mobility transistors (HEMTs) with functionalization at a gate surface with: a thin gold layer and bound antibodies; a thin gold layer and chelating agents; a non- native gate dielectric, or nanorods of a non-native dielectric with an immobilized enzyme. Embodiments including antibodies or enzymes have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.

    摘要翻译: 本发明的实施例包括具有在栅极表面官能化的AlGaN / GaN高电子迁移率晶体管(HEMT)的传感器,其具有:薄金层和结合的抗体; 薄金层和螯合剂; 非天然栅极电介质或具有固定化酶的非天然电介质的纳米棒。 包括抗体或酶的实施方案具有通过结合基团结合到Au-门的抗体或酶。 本发明的其它实施方案是使用传感器检测乳腺癌,前列腺癌,肾损伤,葡萄糖,金属或pH的方法,当溶液与传感器接触时,HEMT产生信号。 解决方案可以是血液,唾液,尿液,呼吸冷凝液或任何怀疑含有传感器特定分析物的溶液。

    MULTILAYER STRUCTURE USEFUL FOR ELECTRICAL INSULATION
    5.
    发明申请
    MULTILAYER STRUCTURE USEFUL FOR ELECTRICAL INSULATION 审中-公开
    用于电绝缘的多层结构

    公开(公告)号:WO2013033044A1

    公开(公告)日:2013-03-07

    申请号:PCT/US2012/052576

    申请日:2012-08-27

    摘要: The present invention is directed to a multilayer structure comprising: (a) a first layer containing polyester and cellulose wherein (i) the polyester is present in an amount of 0 to 50 weight percent floc and 50 to 100 weight percent fibrid, (ii) the cellulose is present in the form of cellulosic pulp fiber and; (iii) the polyester is present in an amount of 0.5 to 75 weight percent and the cellulose is present in an amount of 25 to 99 weight percent, said percentages on the basis of the polyester and cellulose and; (b) a second layer containing cellulosic pulp fiber with the proviso that the second layer does not contain polyester. The first layer may further comprise an aramid. The multilayer structure is particularly useful in a transformer.

    摘要翻译: 本发明涉及一种多层结构,其包括:(a)含有聚酯和纤维素的第一层,其中(i)所述聚酯以0至50重量%的絮状物和50至100重量百分数的纤条体的量存在,(ii) 纤维素以纤维素纸浆纤维的形式存在; (iii)聚酯的存在量为0.5至75重量%,纤维素以25至99重量%的量存在,所述百分比基于聚酯和纤维素; (b)含有纤维素纸浆纤维的第二层,条件是第二层不含聚酯。 第一层可以进一步包含芳族聚酰胺。 多层结构在变压器中特别有用。

    SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS
    7.
    发明申请
    SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS 审中-公开
    传感器使用高电子移动晶体管

    公开(公告)号:WO2009151705A2

    公开(公告)日:2009-12-17

    申请号:PCT/US2009/037767

    申请日:2009-03-20

    IPC分类号: H01L29/778 G01N27/00

    CPC分类号: G01N27/414

    摘要: Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEM Ts), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PIIEMTs, InAlAs/InGaAs PHEMTs, Sb based HEMTs, or InAs based I IEMTs, the HEMTs having functionalization at a gate surface with target receptors. The target receptors allow sensitivity to targets (or substrates) for detecting breast cancer, prostate cancer, kidney injury, chloride, glucose, metals or pEI where a signal is generated by the HEMl when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.

    摘要翻译: 本发明的实施例包括包含AlGaAs / GaAs高电子迁移率晶体管(HEM Ts),inGaP / GaAs HEMT的传感器。 InAlAs / InGaAs HEMT,AlGaAs / InGaAs PIIEMT,InAlAs / InGaAs PHEMTs,Sb基HEMT或基于IAs的I IEMT,HEMT在具有目标受体的门表面具有官能化。 目标受体允许敏感性用于检测乳腺癌,前列腺癌,肾损伤,氯化物,葡萄糖,金属或pEI的目标(或底物),其中当溶液与传感器接触时,HEM1产生信号。 解决方案可以是血液,唾液,尿液,呼吸冷凝液或任何怀疑含有传感器特定分析物的溶液。

    SENSORS USING AIGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS
    8.
    发明申请
    SENSORS USING AIGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS 审中-公开
    使用AIGAN / GAN高电子迁移率晶体管的传感器

    公开(公告)号:WO2009039298A3

    公开(公告)日:2009-06-25

    申请号:PCT/US2008076885

    申请日:2008-09-18

    IPC分类号: G01N27/30 G01N27/00 H01L29/78

    摘要: Embodiments of the invention include sensors comprising AlGaN/GaN high electron mobility transistors (HEMTs) with functionalization at a gate surface with: a thin gold layer and bound antibodies; a thin gold layer and chelating agents; a non- native gate dielectric, or nanorods of a non-native dielectric with an immobilized enzyme. Embodiments including antibodies or enzymes have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.

    摘要翻译: 本发明的实施例包括包含AlGaN / GaN高电子迁移率晶体管(HEMT)的传感器,所述传感器在栅极表面处功能化,具有:薄金层和结合抗体; 薄金层和螯合剂; 非天然栅极电介质或具有固定化酶的非天然电介质的纳米棒。 包括抗体或酶的实施方案具有通过结合基团与Au-gate结合的抗体或酶。 本发明的其他实施方式是当溶液与传感器接触时使用传感器来检测由HEMT产生信号的乳腺癌,前列腺癌,肾损伤,葡萄糖,金属或pH的传感器的方法。 该解决方案可以是血液,唾液,尿液,呼吸冷凝液或怀疑含有任何特定分析物的传感器溶液。