公开(公告)号：WO2010094531A1

公开(公告)日：2010-08-26

申请号：PCT/EP2010/050823

申请日：2010-01-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  KHOJASTEH, Mahmoud ,  VARANASI, Pushkara ,  GOLDFARB, Dario, Leonardo

Inventor： KHOJASTEH, Mahmoud ,  VARANASI, Pushkara ,  GOLDFARB, Dario, Leonardo

IPC: G03F7/039 ,  C08F220/22 ,  C08F220/28

CPC classification number: G03F7/0392 ,  C08F220/22 ,  C08F220/28 ,  Y10S430/114 ,  Y10S430/146

Abstract: Polymers comprising a first methacrylate monomer having a pendent spacer between the polymer backbone and an acid-liable acetal group, a second methacrylate monomer having a pendent group including a fluorinated alkyl group and a third methacrylate monomer having a pendent hydrocarbon group. Photoresist formulations include the polymers, a photoacid generator and a casting solvent. Methods of patterning photoresist films formed from the photoresist formulations are characterized by post-exposure bakes at temperatures of about 60°C or less.

Abstract translation: 聚合物包含在聚合物主链和耐酸缩醛基之间具有悬挂间隔物的第一甲基丙烯酸酯单体，具有含氟烷基的侧基的第二甲基丙烯酸酯单体和具有侧链烃基的第三甲基丙烯酸酯单体。 光致抗蚀剂配方包括聚合物，光致酸发生剂和浇铸溶剂。 由光致抗蚀剂制剂形成的光刻胶膜图案的方法的特征在于在约60℃或更低的温度下曝光后烘烤。

公开(公告)号：WO2011072188A3

公开(公告)日：2011-09-15

申请号：PCT/US2010059800

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM ,  AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL

IPC: H01L21/3063

CPC classification number: H01L21/31133 ,  G03F7/423

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

Abstract translation: 提出了用于去除掩模材料（例如光致抗蚀剂）的方法以及通过去除掩模材料形成的电子器件。 例如，用于去除掩蔽材料的方法包括使掩蔽材料与包含铈和至少一种另外的氧化剂的溶液接触。 铈可以包含在盐中。 盐可以是硝酸铈铵。 该至少一种另外的氧化剂可以是锰，钌和/或含锇化合物。

公开(公告)号：WO2007121456A3

公开(公告)日：2008-03-27

申请号：PCT/US2007066841

申请日：2007-04-18

Applicant: IBM ,  CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

Inventor： CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

IPC: G03C1/00

CPC classification number: G03F7/091 ,  C08F220/28 ,  C08F222/40 ,  C08F232/08 ,  Y10S430/151

Abstract: The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.

Abstract translation: 本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。 抗反射涂料组合物可在含水碱性显影剂中显影。 抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。 聚合物不包含酸不稳定基团。 本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

公开(公告)号：WO2006096221A1

公开(公告)日：2006-09-14

申请号：PCT/US2005/043210

申请日：2005-11-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  HUANG, Wu-song ,  BURNS, Sean ,  KHOJASTEH, Mahmoud

Inventor： HUANG, Wu-song ,  BURNS, Sean ,  KHOJASTEH, Mahmoud

IPC: G03C1/76

CPC classification number: G03F7/094 ,  G03F7/091

Abstract: A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: formula (I), (II), (III), (IV), where each R 1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moietry; R 2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is / or less. The organic moiety mentioned above may be a substituted or unsubtituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof. The compositions are suitable for use as planarizing underlayer in a multilayer lithographic process, including a trilayer lothographic process.

Abstract translation: 公开了具有高耐蚀刻性和改善的光学性能的新型底层组合物。 底层组合物包含乙烯基或丙烯酸酯聚合物，例如甲基丙烯酸酯聚合物，该聚合物包含至少一个取代或未取代的萘或萘酚部分，包括其混合物。 本发明的聚合物的实例包括：式（I），（II），（III），（IV），其中每个R 1独立地选自有机部分或卤素; 每个A独立地是单键或有机溶剂; R 2是氢或甲基; 并且每个X，Y和Z为0至7的整数，Y + Z为/或更小。 上述有机部分可以是选自直链或支链烷基，卤代直链或支链烷基，芳基，卤代芳基，环状烷基和卤代环状烷基的取代或未取代的烃及其任何组合。 该组合物适用于在多层平版印刷工艺中的平面化底层，包括三层薄膜工艺。

公开(公告)号：WO2011080023A3

公开(公告)日：2011-11-17

申请号：PCT/EP2010068813

申请日：2010-12-03

Applicant: IBM ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  AFZALI-ARDAKANI ALI ,  NUNES RONALD WAYNE

Inventor： KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  AFZALI-ARDAKANI ALI ,  NUNES RONALD WAYNE

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/311 ,  G03F7/40 ,  G03F7/423

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

Abstract translation: 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。

公开(公告)号：WO2011080023A2

公开(公告)日：2011-07-07

申请号：PCT/EP2010/068813

申请日：2010-12-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  KHOJASTEH, Mahmoud ,  TOTIR, George, Gabriel ,  AFZALI-ARDAKANI, Ali ,  NUNES, Ronald, Wayne

Inventor： KHOJASTEH, Mahmoud ,  TOTIR, George, Gabriel ,  AFZALI-ARDAKANI, Ali ,  NUNES, Ronald, Wayne

IPC: H01L21/311

CPC classification number: H01L21/311 ,  G03F7/40 ,  G03F7/423

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

Abstract translation: 提供了可用于剥离注入离子的光致抗蚀剂的旋涂配制剂，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的 氧化剂。 将旋涂制剂施加到离子注入的光刻胶并烘烤以形成改性的光刻胶。 改性的光刻胶可溶于水性，酸性或有机溶剂。 因为可以使用上述溶剂之一来完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随修改后的光致抗蚀剂的剥离。

公开(公告)号：WO2011072188A2

公开(公告)日：2011-06-16

申请号：PCT/US2010/059800

申请日：2010-12-10

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  AFZALI-ARDAKANI, Ali ,  BAUM, Thomas H. ,  BOGGS, Karl E. ,  COOPER, Emanuel I. ,  CYWAR, Douglas ,  KERN, Matthew ,  KHOJASTEH, Mahmoud ,  NUNES, Ronald W. ,  TOTIR, George Gabriel

Inventor： AFZALI-ARDAKANI, Ali ,  BAUM, Thomas H. ,  BOGGS, Karl E. ,  COOPER, Emanuel I. ,  CYWAR, Douglas ,  KERN, Matthew ,  KHOJASTEH, Mahmoud ,  TOTIR, George Gabriel

IPC: H01L21/3063

CPC classification number: H01L21/31133 ,  G03F7/423

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

Abstract translation: 提出了去除掩模材料的方法，例如光致抗蚀剂，以及通过去除掩模材料形成的电子器件。 例如，用于去除掩模材料的方法包括使掩蔽材料与包含铈和至少一种另外的氧化剂的溶液接触。 铈可以包含在盐中。 盐可以是硝酸铈铵。 至少一种另外的氧化剂可以是锰，钌和/或含锇化合物。

公开(公告)号：WO2007121456A2

公开(公告)日：2007-10-25

申请号：PCT/US2007/066841

申请日：2007-04-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CHEN, Kuang-jung ,  KHOJASTEH, Mahmoud ,  KWONG, Ranee, Wai-Ling ,  LAWSON, Margaret, C. ,  LI, Wenjie ,  PATEL, Kaushal, S. ,  VARANASI, Pushkara, R.

Inventor： CHEN, Kuang-jung ,  KHOJASTEH, Mahmoud ,  KWONG, Ranee, Wai-Ling ,  LAWSON, Margaret, C. ,  LI, Wenjie ,  PATEL, Kaushal, S. ,  VARANASI, Pushkara, R.

IPC: G03C1/00

CPC classification number: G03F7/091 ,  C08F220/28 ,  C08F222/40 ,  C08F232/08 ,  Y10S430/151

Abstract: The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.

Abstract translation: 本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。 抗反射涂料组合物可在含水碱性显影剂中显影。 抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。 聚合物不包含酸不稳定基团。 本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

公开(公告)号：WO2006050609A1

公开(公告)日：2006-05-18

申请号：PCT/CA2005/001728

申请日：2005-11-14

Applicant: ST-JEAN PHOTOCHIMIE INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION (IBM) ,  MOTALLEBI, Shahrokh ,  DÉSILETS, Denis ,  MARCOTTE, Ian ,  BOUCHARD, Luc ,  FEGHALI, Khalil ,  VARANASI, Pushkara Rao ,  KHOJASTEH, Mahmoud

Inventor： MOTALLEBI, Shahrokh ,  DÉSILETS, Denis ,  MARCOTTE, Ian ,  BOUCHARD, Luc ,  FEGHALI, Khalil ,  VARANASI, Pushkara Rao ,  KHOJASTEH, Mahmoud

IPC: C07C69/74 ,  G03F7/20 ,  H01L21/308

CPC classification number: G03F7/0046 ,  C07C69/757 ,  C07C2602/42 ,  G03F7/0397

Abstract: The present invention relates to compounds of formula (I): wherein R 1 is H, or a C 1 -C 10 linear, branched or cyclic alkyl group which is unsubstituted or substituted with fluorine; R 2 is an alicyclic group having 5 to 20 carbon atoms which is unsubstituted or substituted with fluorine; and R 3 represents a C 1 -C 10 linear or branched alkylène which is unsubstituted or substituted with fluorine. Processes for preparing such compounds are also disclosed. The compounds of the present invention can be used as monomers in the fields of photolithography and semiconductor fabrication.

Abstract translation: 本发明涉及式（I）的化合物：其中R 1是H或C 1 -C 10直链，支链或 未取代或被氟取代的环状烷基; R 2是未被取代或被氟取代的碳原子数5〜20的脂环族基团; R 3表示未被取代或被氟取代的C 1 -C 10直链或支链烷基。 还公开了制备这些化合物的方法。 本发明的化合物可以用作光刻和半导体制造领域中的单体。