公开(公告)号：WO2012051380A3

公开(公告)日：2012-07-12

申请号：PCT/US2011056084

申请日：2011-10-13

Applicant: ADVANCED TECH MATERIALS ,  COOPER EMANUEL I ,  TOTIR GEORGE GABRIEL ,  PAYNE MAKONNEN ,  IBM

Inventor： COOPER EMANUEL I ,  TOTIR GEORGE GABRIEL ,  PAYNE MAKONNEN

IPC: C11D7/32 ,  C09K13/00 ,  G03F7/42 ,  H01L21/027 ,  H01L21/304

CPC classification number: C11D3/0073 ,  C11D3/046 ,  C11D3/26 ,  C11D3/3942 ,  C11D3/3947 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/76814

Abstract: Cleaning compositions and processes for cleaning residue from a microelectronic device having said residue thereon. The composition comprises at least one amine, at least one oxidizing agent, water, and at least one borate species and achieves highly efficacious cleaning of the residue material, including post-ash residue, post-etch residue, post-CMP residue, particles, organic contaminants, metal ion contaminants, and combinations thereof from the microelectronic device while simultaneously not damaging the titanium nitride layers and low-k dielectric materials also present on the device.

Abstract translation: 用于从其上具有所述残余物的微电子器件清洁残留物的清洁组合物和方法。 组合物包含至少一种胺，至少一种氧化剂，水和至少一种硼酸盐物质，并且实现残余物质的高效清洁，包括后灰渣残留物，蚀刻后残留物，CMP后残留物，颗粒， 有机污染物，金属离子污染物及其组合，同时不损坏也存在于该装置上的氮化钛层和低k电介质材料。

公开(公告)号：WO2011072188A3

公开(公告)日：2011-09-15

申请号：PCT/US2010059800

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM ,  AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL

IPC: H01L21/3063

CPC classification number: H01L21/31133 ,  G03F7/423

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

Abstract translation: 提出了用于去除掩模材料（例如光致抗蚀剂）的方法以及通过去除掩模材料形成的电子器件。 例如，用于去除掩蔽材料的方法包括使掩蔽材料与包含铈和至少一种另外的氧化剂的溶液接触。 铈可以包含在盐中。 盐可以是硝酸铈铵。 该至少一种另外的氧化剂可以是锰，钌和/或含锇化合物。

公开(公告)号：WO2012051380A2

公开(公告)日：2012-04-19

申请号：PCT/US2011/056084

申请日：2011-10-13

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  COOPER, Emanuel I. ,  TOTIR, George Gabriel ,  PAYNE, Makonnen ,  INTERNATIONAL BUSINESS MACHINES COPORATION

Inventor： COOPER, Emanuel I. ,  TOTIR, George Gabriel ,  PAYNE, Makonnen

IPC: C11D7/32 ,  H01L21/304 ,  H01L21/027 ,  G03F7/42 ,  C09K13/00

CPC classification number: C11D3/0073 ,  C11D3/046 ,  C11D3/26 ,  C11D3/3942 ,  C11D3/3947 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/76814

Abstract: Cleaning compositions and processes for cleaning residue from a microelectronic device having said residue thereon. The composition comprises at least one amine, at least one oxidizing agent, water, and at least one borate species and achieves highly efficacious cleaning of the residue material, including post-ash residue, post-etch residue, post-CMP residue, particles, organic contaminants, metal ion contaminants, and combinations thereof from the microelectronic device while simultaneously not damaging the titanium nitride layers and low-k dielectric materials also present on the device.

Abstract translation: 用于清洁其上具有所述残余物的微电子装置的清洁组合物和方法。 该组合物包含至少一种胺，至少一种氧化剂，水和至少一种硼酸盐物质，并实现残余物材料的高效清洁，包括灰化后残余物，蚀刻后残余物，CMP后残余物，颗粒， 有机污染物，金属离子污染物以及它们的组合，同时不破坏装置上也存在的氮化钛层和低k电介质材料。

公开(公告)号：WO2011080023A3

公开(公告)日：2011-11-17

申请号：PCT/EP2010068813

申请日：2010-12-03

Applicant: IBM ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  AFZALI-ARDAKANI ALI ,  NUNES RONALD WAYNE

Inventor： KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  AFZALI-ARDAKANI ALI ,  NUNES RONALD WAYNE

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/311 ,  G03F7/40 ,  G03F7/423

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

Abstract translation: 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。

公开(公告)号：WO2011080023A2

公开(公告)日：2011-07-07

申请号：PCT/EP2010/068813

申请日：2010-12-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  KHOJASTEH, Mahmoud ,  TOTIR, George, Gabriel ,  AFZALI-ARDAKANI, Ali ,  NUNES, Ronald, Wayne

Inventor： KHOJASTEH, Mahmoud ,  TOTIR, George, Gabriel ,  AFZALI-ARDAKANI, Ali ,  NUNES, Ronald, Wayne

IPC: H01L21/311

CPC classification number: H01L21/311 ,  G03F7/40 ,  G03F7/423

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

Abstract translation: 提供了可用于剥离注入离子的光致抗蚀剂的旋涂配制剂，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的 氧化剂。 将旋涂制剂施加到离子注入的光刻胶并烘烤以形成改性的光刻胶。 改性的光刻胶可溶于水性，酸性或有机溶剂。 因为可以使用上述溶剂之一来完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随修改后的光致抗蚀剂的剥离。

公开(公告)号：WO2011072188A2

公开(公告)日：2011-06-16

申请号：PCT/US2010/059800

申请日：2010-12-10

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  AFZALI-ARDAKANI, Ali ,  BAUM, Thomas H. ,  BOGGS, Karl E. ,  COOPER, Emanuel I. ,  CYWAR, Douglas ,  KERN, Matthew ,  KHOJASTEH, Mahmoud ,  NUNES, Ronald W. ,  TOTIR, George Gabriel

Inventor： AFZALI-ARDAKANI, Ali ,  BAUM, Thomas H. ,  BOGGS, Karl E. ,  COOPER, Emanuel I. ,  CYWAR, Douglas ,  KERN, Matthew ,  KHOJASTEH, Mahmoud ,  TOTIR, George Gabriel

IPC: H01L21/3063

CPC classification number: H01L21/31133 ,  G03F7/423

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

Abstract translation: 提出了去除掩模材料的方法，例如光致抗蚀剂，以及通过去除掩模材料形成的电子器件。 例如，用于去除掩模材料的方法包括使掩蔽材料与包含铈和至少一种另外的氧化剂的溶液接触。 铈可以包含在盐中。 盐可以是硝酸铈铵。 至少一种另外的氧化剂可以是锰，钌和/或含锇化合物。