公开(公告)号：WO0188993A3

公开(公告)日：2002-02-28

申请号：PCT/CA0100523

申请日：2001-04-09

Applicant: UNIV MCMASTER ,  THOMPSON DAVID A ,  ROBINSON BRADLEY J ,  LETAL GREGORY J ,  LEE ALEX S W

Inventor： THOMPSON DAVID A ,  ROBINSON BRADLEY J ,  LETAL GREGORY J ,  LEE ALEX S W

IPC: H01L21/18 ,  H01L29/15 ,  H01L29/201 ,  H01L33/06 ,  H01L33/30 ,  H01S5/026 ,  H01S5/20 ,  H01S5/34 ,  H01L33/00

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L21/182 ,  H01L29/155 ,  H01L29/201 ,  H01L33/30 ,  H01S5/0265 ,  H01S5/2068 ,  H01S5/2072 ,  H01S5/3414 ,  Y10S257/929

Abstract: A novel quantum well intermixing method for regionally modifying the bandgap properties of InGaAsP quantum well structures is disclosed. The method induces bandgap wavelength blue shifting and deep states for reducing carrier lifetime within InGaAsp quantum well structures. The novel quantum well intermixing technique is applied to the modulator section of an integrated DFB laser/electro-absorption modulator, wherein the modulator exhibits fast switching times with efficient optical coupling between the DFB laser and modulator region.

Abstract translation: 公开了一种用于区域性修饰InGaAsP量子阱结构的带隙特性的量子阱混合方法。 该方法诱导带隙波长蓝移和深状态，以降低InGaAsp量子阱结构中的载流子寿命。 新型量子阱混合技术应用于集成DFB激光/电吸收调制器的调制器部分，其中调制器通过DFB激光器和调制器区域之间的有效光耦合展现出快速的开关时间。