公开(公告)号：WO2011156349A2

公开(公告)日：2011-12-15

申请号：PCT/US2011/039414

申请日：2011-06-07

Applicant: APPLIED MATERIALS, INC. ,  LEE, Joung Joo ,  TANG, Xianmin ,  GUNG, Tza-Jing

Inventor： LEE, Joung Joo ,  TANG, Xianmin ,  GUNG, Tza-Jing

IPC: H01L21/28 ,  H01L21/3205

CPC classification number: H01L21/2855 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3492 ,  H01L21/76882

Abstract: Methods for forming interconnect structures are provided herein. In some embodiments, a method for forming an interconnect on a substrate may include depositing a material atop an upper surface of the substrate and atop one or more surfaces of a feature disposed in the substrate by a first deposition process that deposits the material at a faster rate on the upper surface than on a bottom surface of the feature; depositing the material atop the upper surface of the substrate and atop one or more surfaces of the feature by a second deposition process that deposits the material at a greater rate on the bottom surface of the feature than on the upper surface of the substrate; and heating the deposited material to draw the deposited material towards the bottom surface of the feature to at least partially fill the feature with the deposited material.

Abstract translation: 本文提供形成互连结构的方法。 在一些实施例中，用于在衬底上形成互连的方法可以包括通过第一沉积工艺沉积衬底的上表面顶部的材料，以及设置在衬底中的特征的顶部的一个或多个表面上，所述第一沉积工艺以更快的速度沉积材料 在上表面上比在特征的底表面上的速率; 通过第二沉积工艺将所述材料沉积在所述基底的上表面顶部和所述特征的一个或多个表面上方，所述第二沉积工艺在所述特征的底表面上以比在所述基底的上表面上更大的速率沉积材料; 以及加热沉积的材料以将沉积的材料拉向特征的底表面，以至少部分地用沉积的材料填充该特征。

公开(公告)号：WO2011156349A3

公开(公告)日：2012-04-05

申请号：PCT/US2011039414

申请日：2011-06-07

Applicant: APPLIED MATERIALS INC ,  LEE JOUNG JOO ,  TANG XIANMIN ,  GUNG TZA-JING

Inventor： LEE JOUNG JOO ,  TANG XIANMIN ,  GUNG TZA-JING

IPC: H01L21/28 ,  H01L21/3205

CPC classification number: H01L21/2855 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3492 ,  H01L21/76882

Abstract: Methods for forming interconnect structures are provided herein. In some embodiments, a method for forming an interconnect on a substrate may include depositing a material atop an upper surface of the substrate and atop one or more surfaces of a feature disposed in the substrate by a first deposition process that deposits the material at a faster rate on the upper surface than on a bottom surface of the feature; depositing the material atop the upper surface of the substrate and atop one or more surfaces of the feature by a second deposition process that deposits the material at a greater rate on the bottom surface of the feature than on the upper surface of the substrate; and heating the deposited material to draw the deposited material towards the bottom surface of the feature to at least partially fill the feature with the deposited material.

Abstract translation: 本文提供形成互连结构的方法。 在一些实施例中，用于在衬底上形成互连的方法可以包括在衬底的上表面顶部沉积材料，并且通过第一沉积工艺沉积位于衬底中的特征的一个或多个表面上，所述第一沉积工艺以更快的速度沉积材料 在上表面上比在特征的底表面上的速率; 通过第二沉积工艺将所述材料沉积在所述基底的上表面顶部和所述特征的一个或多个表面上方，所述第二沉积工艺在所述特征的底表面上以比在所述基底的上表面上更大的速率沉积材料; 以及加热沉积的材料以将沉积的材料拉向特征的底表面，以至少部分地用沉积的材料填充该特征。