公开(公告)号：WO2010062918A2

公开(公告)日：2010-06-03

申请号：PCT/US2009/065812

申请日：2009-11-24

Applicant: LAM RESEARCH CORPORATION ,  KHOLODENKO, Arnold ,  LIN, Cheng-Yu, Sean ,  GINZBURG, Leon ,  MANDELBOYM, Mark ,  TOMASCH, Gregory, A. ,  HUSAIN, Anwar

Inventor： KHOLODENKO, Arnold ,  LIN, Cheng-Yu, Sean ,  GINZBURG, Leon ,  MANDELBOYM, Mark ,  TOMASCH, Gregory, A. ,  HUSAIN, Anwar

IPC: H01L21/302

CPC classification number: H01L21/6704 ,  B08B3/003 ,  C11D11/0047 ,  C11D11/0058 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L21/6776

Abstract: In an example embodiment, a linear wet system includes a carrier and a proximity head in a chamber. The proximity head includes three sections in a linear arrangement. The first section suctions liquid from the upper surface of a semiconductor wafer as the wafer is transported by the carrier under the proximity head. The second section is configured to cause a film (or meniscus) of cleaning foam which is a non-Newtonian fluid to flow onto the upper surface of the wafer. The third section is configured to cause a film of rinsing fluid to flow onto the upper surface of the wafer as the wafer is carried under the proximity head. The third section is defined partially around the second section and up to the first section, so that the third section and the first section create a confinement of the cleaning foam with respect to the chamber.

Abstract translation: 在示例性实施例中，线性湿系统包括腔室中的载体和临近头。 临近头包括三个线性排列的部分。 当晶片由邻近头下的载体传送时，第一部分从半导体晶片的上表面抽吸液体。 第二部分构造成使非牛顿流体的清洁泡沫的膜（或弯液面）流到晶片的上表面上。 第三部分被配置成当晶片在邻近头下被携带时使漂洗流体膜流到晶片的上表面。 第三部分被部分地限定在第二部分周围并且一直到第一部分，使得第三部分和第一部分形成清洁泡沫相对于腔室的限制。

公开(公告)号：WO2010129115A3

公开(公告)日：2011-01-13

申请号：PCT/US2010029273

申请日：2010-03-30

Applicant: LAM RES CORP ,  LIN CHENG-YU SEAN ,  KAWAGUCHI MARK ,  WILCOXSON MARK ,  MARTIN RUSSELL ,  GINZBURG LEON

Inventor： LIN CHENG-YU SEAN ,  KAWAGUCHI MARK ,  WILCOXSON MARK ,  MARTIN RUSSELL ,  GINZBURG LEON

IPC: H01L21/302 ,  H01L21/304

CPC classification number: H01L21/67051 ,  Y10S134/902

Abstract: An upper processing head includes a topside module defined to apply a cleaning material to a top surface of a substrate and then expose the substrate to a topside rinsing meniscus. The topside module is defined to flow a rinsing material through the topside rinsing meniscus in a substantially uni-directional manner towards the cleaning material and opposite a direction of movement of the substrate. A lower processing head includes a bottomside module defined to apply a bottomside rinsing meniscus to the substrate so as to balance a force applied to the substrate by the topside rinsing meniscus. The bottomside module is defined to provide a drain channel for collecting and draining the cleaning material dispensed from the upper processing head when the substrate is not present between the upper and lower processing heads. The upper and lower processing heads can include multiple instantiations of the topside and bottomside modules, respectively.

Abstract translation: 上加工头包括顶层模块，其定义为将清洁材料施加到基板的顶表面，然后将基板暴露于顶侧冲洗弯液面。 顶部模块被定义为使冲洗材料以基本上单向的方式流过顶侧冲洗弯液面朝向清洁材料并与衬底的移动方向相反。 下处理头包括底部模块，所述底部模块限定为将底部冲洗弯液面施加到基底，以平衡由顶侧冲洗弯液面施加到基底的力。 底部模块被限定为当衬底不存在于上加工头和下加工头之间时，提供用于收集和排出从上加工头分配的清洁材料的排水通道。 上下处理头可以分别包括顶侧和底部模块的多个实例。

公开(公告)号：WO2010062918A3

公开(公告)日：2010-08-12

申请号：PCT/US2009065812

申请日：2009-11-24

Applicant: LAM RES CORP ,  KHOLODENKO ARNOLD ,  LIN CHENG-YU SEAN ,  GINZBURG LEON ,  MANDELBOYM MARK ,  TOMASCH GREGORY A ,  HUSAIN ANWAR

Inventor： KHOLODENKO ARNOLD ,  LIN CHENG-YU SEAN ,  GINZBURG LEON ,  MANDELBOYM MARK ,  TOMASCH GREGORY A ,  HUSAIN ANWAR

IPC: H01L21/302

CPC classification number: H01L21/6704 ,  B08B3/003 ,  C11D11/0047 ,  C11D11/0058 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L21/6776

Abstract: In an example embodiment, a linear wet system includes a carrier and a proximity head in a chamber. The proximity head includes three sections in a linear arrangement. The first section suctions liquid from the upper surface of a semiconductor wafer as the wafer is transported by the carrier under the proximity head. The second section is configured to cause a film (or meniscus) of cleaning foam which is a non-Newtonian fluid to flow onto the upper surface of the wafer. The third section is configured to cause a film of rinsing fluid to flow onto the upper surface of the wafer as the wafer is carried under the proximity head. The third section is defined partially around the second section and up to the first section, so that the third section and the first section create a confinement of the cleaning foam with respect to the chamber.

Abstract translation: 在一个示例性实施例中，线性湿式系统包括载体和室中的邻近头部。 接近头包括线性布置的三个部分。 第一部分在半导体晶片的上表面吸附液体，因为晶片由邻近头部下方的载体输送。 第二部分被配置为使得作为非牛顿流体的清洁泡沫的膜（或弯液面）流动到晶片的上表面上。 第三部分构造成当晶片被携带在邻近头部下方时，使冲洗流体膜流到晶片的上表面。 第三部分围绕第二部分和第一部分部分地限定，使得第三部分和第一部分产生相对于室的清洁泡沫的限制。

公开(公告)号：WO2009085250A3

公开(公告)日：2009-08-27

申请号：PCT/US2008013985

申请日：2008-12-19

Applicant: LAM RES CORP ,  KHOLODENKO ARNOLD ,  LIN CHENG-YU SEAN

Inventor： KHOLODENKO ARNOLD ,  LIN CHENG-YU SEAN

IPC: H01L21/302 ,  H01L21/30

CPC classification number: H01L21/67051 ,  H01L21/67057

Abstract: Methods configure a proximity head for conditioning fluid flow relative to a proximity head in processing of a surface of a wafer by a meniscus. The methods configure the head in one piece while maintaining head rigidity even as the head is lengthened for cleaning of large diameter wafers. The one-piece head configuring separates main fluid flows from separate flows of fluid relative to the wafer surface, with the separation being by a high resistance fluid flow configuration, resulting in substantially uniform fluid flows across increased lengths of the head in a unit for either fluid supply or return.

Abstract translation: 在弯液面处理晶片表面时，方法配置邻近头用于调节相对于邻近头的流体流动。 这种方法将头部配置成一体，同时保持头部刚度，即使头部被延长以清洁大直径晶片。 一体式头部构造将主要流体流相对于晶片表面的单独的流体流分离，其中分离是由高阻力流体流动构造，导致基本上均匀的流体流过头部的增加的长度， 流体供应或返回。

公开(公告)号：WO2009100409A3

公开(公告)日：2009-12-03

申请号：PCT/US2009033499

申请日：2009-02-07

Applicant: LAM RES CORP ,  KHOLODENKO ARNOLD ,  LIN CHENG-YU SEAN ,  MARTIN RUSSELL

Inventor： KHOLODENKO ARNOLD ,  LIN CHENG-YU SEAN ,  MARTIN RUSSELL

IPC: H01L21/304 ,  H01L21/30

CPC classification number: H01L21/67051 ,  Y10S134/902 ,  Y10T29/49826

Abstract: Conditioning fluid flow into a proximity head is provided for fluid delivery to a wafer surface. An upper plenum connected to a plurality of down flow bores is supplied by a main bore. The down flow bores provide fluid into the upper plenum, and a resistor bore is connected to the upper plenum. The resistor bore receives a resistor having a shape so as to limit flow of the fluid through the resistor bore. A lower plenum connected to the resistor bore is configured to receive fluid from the resistor bore as limited by the resistor for flow to a plurality of outlet ports extending between the lower plenum and surfaces of the head surface. Fluid flowing through the upper plenum, the resistor bore with the resistor and the lower plenum is substantially conditioned to define a substantially uniform fluid outflow from the plurality of outlet ports, across the width of the proximity head.

Abstract translation: 提供流体流入邻近头部的调节流体输送到晶片表面。 连接到多个向下流动孔的上部气室由主孔提供。 向下流动孔将流体提供到上部通风室中，并且电阻器孔连接到上部增压室。 电阻器孔接收具有形状以阻止流体流过电阻器孔的电阻器。 连接到电阻器孔的下部增压室被配置为从电阻器孔接收流体，由电阻器限制，以流向在下部增压室和头部表面的表面之间延伸的多个出口端口。 流过上部通风室的流体，具有电阻器和下部增压室的电阻器孔基本上被调节以限定跨过接近头部宽度的多个出口端口的基本均匀的流体流出。

公开(公告)号：WO2009100409A2

公开(公告)日：2009-08-13

申请号：PCT/US2009/033499

申请日：2009-02-07

Applicant: LAM RESEARCH CORPORATION ,  KHOLODENKO, Arnold ,  LIN, Cheng-Yu (Sean) ,  MARTIN, Russell

Inventor： KHOLODENKO, Arnold ,  LIN, Cheng-Yu (Sean) ,  MARTIN, Russell

IPC: H01L21/304 ,  H01L21/30

CPC classification number: H01L21/67051 ,  Y10S134/902 ,  Y10T29/49826

Abstract: Conditioning fluid flow into a proximity head is provided for fluid delivery to a wafer surface. An upper plenum connected to a plurality of down flow bores is supplied by a main bore. The down flow bores provide fluid into the upper plenum, and a resistor bore is connected to the upper plenum. The resistor bore receives a resistor having a shape so as to limit flow of the fluid through the resistor bore. A lower plenum connected to the resistor bore is configured to receive fluid from the resistor bore as limited by the resistor for flow to a plurality of outlet ports extending between the lower plenum and surfaces of the head surface. Fluid flowing through the upper plenum, the resistor bore with the resistor and the lower plenum is substantially conditioned to define a substantially uniform fluid outflow from the plurality of outlet ports, across the width of the proximity head.

Abstract translation: 调节流体流入邻近头以提供流体输送至晶片表面。 连接到多个下流孔的上部充气室由主孔供应。 下流孔提供流体进入上部充气室，电阻器孔连接到上部充气室。 电阻器孔接收具有形状的电阻器以限制流体通过电阻器孔的流动。 连接到电阻器孔的下部充气室被配置为接收来自电阻器孔的流体，如由电阻器限制的，用于流动到在下部充气室与头部表面的表面之间延伸的多个出口端口。 流过上部充气室的流体，具有电阻器和下部充气室的电阻器孔基本上被调节成限定从多个出口端口跨越邻近头部的宽度大体均匀的流体流出。

公开(公告)号：WO2010132371A3

公开(公告)日：2011-02-03

申请号：PCT/US2010034264

申请日：2010-05-10

Applicant: LAM RES CORP ,  KHOLODENKO ARNOLD ,  MIKHAYLICHENKO KATRINA ,  LIN CHENG-YU SEAN ,  WILCOXSON MARK ,  GINZBURG LEON ,  KAWAGUCHI MARK

Inventor： KHOLODENKO ARNOLD ,  MIKHAYLICHENKO KATRINA ,  LIN CHENG-YU SEAN ,  WILCOXSON MARK ,  GINZBURG LEON ,  KAWAGUCHI MARK

IPC: H01L21/302

CPC classification number: B08B3/041 ,  H01L21/02057 ,  H01L21/67051

Abstract: A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.

Abstract translation: 对基材的表面进行清洁材料的第一次施加。 清洁材料包括用于捕获存在于基材表面上的污染物的一种或多种粘弹性材料。 冲洗液的第一次应用是在基材的表面上进行，从基材的表面冲洗清洗材料。 洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。 清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。 然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

公开(公告)号：WO2010129115A2

公开(公告)日：2010-11-11

申请号：PCT/US2010/029273

申请日：2010-03-30

Applicant: LAM RESEARCH CORPORATION ,  LIN, Cheng-Yu (Sean) ,  KAWAGUCHI, Mark ,  WILCOXSON, Mark ,  MARTIN, Russell ,  GINZBURG, Leon

Inventor： LIN, Cheng-Yu (Sean) ,  KAWAGUCHI, Mark ,  WILCOXSON, Mark ,  MARTIN, Russell ,  GINZBURG, Leon

IPC: H01L21/302 ,  H01L21/304

CPC classification number: H01L21/67051 ,  Y10S134/902

Abstract: An upper processing head includes a topside module defined to apply a cleaning material to a top surface of a substrate and then expose the substrate to a topside rinsing meniscus. The topside module is defined to flow a rinsing material through the topside rinsing meniscus in a substantially uni-directional manner towards the cleaning material and opposite a direction of movement of the substrate. A lower processing head includes a bottomside module defined to apply a bottomside rinsing meniscus to the substrate so as to balance a force applied to the substrate by the topside rinsing meniscus. The bottomside module is defined to provide a drain channel for collecting and draining the cleaning material dispensed from the upper processing head when the substrate is not present between the upper and lower processing heads. The upper and lower processing heads can include multiple instantiations of the topside and bottomside modules, respectively.

Abstract translation: 上加工头包括顶层模块，其定义为将清洁材料施加到基板的顶表面，然后将基板暴露于顶侧冲洗弯液面。 顶部模块被定义为使冲洗材料以基本上单向的方式流过顶侧冲洗弯液面朝向清洁材料并与衬底的移动方向相反。 下处理头包括底部模块，所述底部模块限定为将底部冲洗弯液面施加到基底，以平衡由顶侧冲洗弯液面施加到基底的力。 底部模块被限定为当衬底不存在于上加工头和下加工头之间时，提供用于收集和排出从上加工头分配的清洁材料的排水通道。 上下处理头可以分别包括顶侧和底部模块的多个实例。

公开(公告)号：WO2010017146A1

公开(公告)日：2010-02-11

申请号：PCT/US2009/052609

申请日：2009-08-03

Applicant: LAM RESEARCH CORPORATION ,  KHOLODENKO, Arnold ,  HUSAIN, Anwar ,  TOMASCH, Gregory, A. ,  LIN, Cheng-yu (sean)

Inventor： KHOLODENKO, Arnold ,  HUSAIN, Anwar ,  TOMASCH, Gregory, A. ,  LIN, Cheng-yu (sean)

IPC: B08B3/00

CPC classification number: H01L21/67051 ,  B01F3/04446 ,  B01F5/0473 ,  B01F5/0475 ,  B01F5/0485 ,  B01F5/0656 ,  B01F5/0657 ,  Y10T137/0318

Abstract: In an example embodiment, a device for generating a cleaning foam includes a female housing and a male plug. The plug includes an aperture into which a fluid flows from another component of the cleaning system. The plug includes a premix chamber which receives the fluid from the aperture and into which a gas is injected to form a foam. In an example embodiment, the chamber is a hollow cylinder and the gas is injected into the cylinder through channels which are tangential to the cylinder. The plug also includes a solid cylinder with a continuous helical indentation on the outside of the solid cylinder. When the male plug is inserted into the female housing, the continuous helical indentation and the inner surface of the housing form a helical channel through which the foam flows and is further mixed on its way back into the cleaning system.

Abstract translation: 在示例性实施例中，用于产生清洁泡沫的装置包括阴壳体和阳插头。 塞子包括孔，流体从清洁系统的另一部件流入流体。 塞子包括预混合室，其接收来自孔的流体并注入气体以形成泡沫。 在一个示例性实施例中，腔室是中空圆柱体，并且气体通过与气缸相切的通道注入气缸。 塞子还包括在实心圆柱体的外侧上具有连续的螺旋形凹陷的实心圆柱体。 当公插头插入阴壳体中时，连续的螺旋形凹口和壳体的内表面形成螺旋通道，泡沫流过该通道，并进一步在返回到清洁系统中的混合物中混合。

公开(公告)号：WO2010132371A2

公开(公告)日：2010-11-18

申请号：PCT/US2010/034264

申请日：2010-05-10

Applicant: LAM RESEARCH CORPORATION ,  KHOLODENKO, Arnold ,  MIKHAYLICHENKO, Katrina ,  LIN, Cheng-Yu (sean) ,  WILCOXSON, Mark ,  GINZBURG, Leon ,  KAWAGUCHI, Mark

Inventor： KHOLODENKO, Arnold ,  MIKHAYLICHENKO, Katrina ,  LIN, Cheng-Yu (sean) ,  WILCOXSON, Mark ,  GINZBURG, Leon ,  KAWAGUCHI, Mark

IPC: H01L21/302

CPC classification number: B08B3/041 ,  H01L21/02057 ,  H01L21/67051

Abstract: A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.

Abstract translation: 对基材的表面进行清洁材料的第一次施加。 清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。 冲洗流体的第一次施加是在基材的表面上，以从基材的表面上冲洗清洁材料。 洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。 清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。 然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。