公开(公告)号：WO2018102305A1

公开(公告)日：2018-06-07

申请号：PCT/US2017/063486

申请日：2017-11-28

Applicant: TEL FSI, INC.

Inventor： HANZLIK, Edward Deneen ,  GRUENHAGEN, Michael ,  HERBST, Tim W.

IPC: H01L21/687

CPC classification number: H01L21/67051 ,  B08B7/0092 ,  H01L21/02052 ,  H01L21/6719 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68785

Abstract: Cleaning systems and methods for semiconductor fabrication use rotatable and translatable chuck assemblies that incorporate a compact drive system to cause chuck rotation. The system uses an offset drive gear that drives a ring gear. This reduces components whose friction or lubricants might generate undue contamination. The low friction chuck functionality of the present invention is useful in any fabrication tool in which a workpiece is supported on a rotating support during a treatment. The chuck is particularly useful in cryogenic cleaning treatments.

公开(公告)号：WO2018026867A1

公开(公告)日：2018-02-08

申请号：PCT/US2017/044986

申请日：2017-08-01

Applicant: LAM RESEARCH CORPORATION

Inventor： HUDSON, Eric A.

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  H01L27/108

CPC classification number: H01L21/67748 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/31116 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67259 ,  H01L27/10861

Abstract: Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants having low sticking coefficients in some embodiments. The protective coating may also be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. In some cases the protective coating is deposited using plasma assisted atomic layer deposition or plasma assisted chemical vapor deposition.

Abstract translation: 这里的各种实施例涉及用于在半导体衬底上的电介质材料中形成凹陷结构的方法，设备和系统。 以循环方式采用分开的蚀刻和沉积操作。 每个蚀刻操作部分蚀刻该特征。 每个沉积操作在特征的侧壁上形成保护涂层以防止在蚀刻操作期间电介质材料的横向蚀刻。 可以使用导致沿着侧壁的大致整个长度形成保护涂层的方法来沉积保护涂层。 在一些实施例中，可以使用具有低粘着系数的特定反应物来沉积保护涂层。 保护涂层也可以使用导致基本上完全侧壁涂覆的特定反应机理来沉积。 在某些情况下，使用等离子体辅助原子层沉积或等离子体辅助化学气相沉积来沉积保护涂层。

公开(公告)号：WO2017139483A1

公开(公告)日：2017-08-17

申请号：PCT/US2017/017216

申请日：2017-02-09

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON U.S. HOLDINGS, INC.

Inventor： O'MEARA, David L. ,  DIP, Anthony

IPC: H01L21/02 ,  H01L21/205 ,  H01L21/311 ,  H01L21/027

CPC classification number: H01L21/31116 ,  H01L21/02123 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/6719 ,  H01L21/68771

Abstract: Embodiments of the invention describe a method and apparatus for multi-film deposition and etching in a batch processing system. According to one embodiment, the method includes arranging the substrates on a plurality of substrate supports in a process chamber, where the process chamber contains processing spaces defined around an axis of rotation in the process chamber, rotating the plurality of substrate supports about the axis of rotation, depositing a first film on a patterned film on each of the substrates by atomic layer deposition, and etching a portion of the first film on each of the substrates, where etching a portion of the first film includes removing at least one horizontal portion of the first film while substantially leaving vertical portions of the first film. The method further includes repeating the depositing and etching steps for a second film that contains a different material than the first film.

Abstract translation: 本发明的实施例描述了用于批量处理系统中的多膜沉积和蚀刻的方法和设备。 根据一个实施例，该方法包括将衬底布置在处理室中的多个衬底支撑件上，其中处理室包含围绕处理室中的旋转轴线限定的处理空间，围绕处理室的轴线旋转多个衬底支撑件 旋转，通过原子层沉积将第一膜沉积在每个基板上的图案化膜上，以及蚀刻每个基板上的第一膜的一部分，其中蚀刻第一膜的一部分包括去除至少一个水平部分 第一膜，同时基本上离开第一膜的垂直部分。 该方法还包括重复用于包含与第一膜不同的材料的第二膜的沉积和蚀刻步骤。

公开(公告)号：WO2017136222A1

公开(公告)日：2017-08-10

申请号：PCT/US2017/015211

申请日：2017-01-27

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： TIMANS, Paul

IPC: H01L21/324 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/324 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67248

Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a heat treatment process can include receiving a substrate on a wafer support in a processing chamber of a millisecond anneal system; heating the substrate to an intermediate temperature; and heating the substrate using a millisecond heating flash. Prior to heating the substrate to the intermediate temperature, the process can include heating the substrate to a pre-bake temperature for a soak period.

Abstract translation: 提供毫秒退火系统的预热过程。 在一个示例实施方式中，热处理工艺可以包括：在毫秒退火系统的处理室中的晶片支撑件上接收衬底; 将衬底加热到​​中间温度; 并使用毫秒加热闪光加热衬底。 在将基材加热至中间温度之前，该方法可包括将基材加热至预烘温度以保持一段时间。

公开(公告)号：WO2017116740A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/066882

申请日：2016-12-15

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： LIEBERER, Markus ,  SEIFERT, Christian ,  BREMENSDORFER, Rolf

IPC: H05B31/06 ,  H05B31/24

CPC classification number: H01J61/0732 ,  H01J61/526 ,  H01L21/268 ,  H01L21/67115 ,  H01L21/6719 ,  H05B3/0047 ,  H05B3/03 ,  H05H1/48 ,  H05H2001/488

Abstract: Electrode tips for arc lamps for use in, for instance, a millisecond anneal system are provided. In one example implementation, an electrode for an arc lamp can have an electrode tip. The surface of the electrode tip can have one or more grooves to reduce the transportation of molten material across the surface of the electrode tip. The electrode can include an interface between the electrode tip and a heat sink. The interface can have a shape designed to have a desired lateral temperature distribution across the surface of the electrode tip.

Abstract translation: 提供用于例如毫秒退火系统中的弧光灯的电极尖端。 在一个示例实施方式中，用于弧光灯的电极可以具有电极尖端。 电极头的表面可具有一个或多个凹槽以减少熔融材料在电极头的表面上的传送。 电极可以包括电极尖端和散热器之间的界面。 界面可以具有被设计为在电极尖端的表面上具有期望的横向温度分布的形状。

公开(公告)号：WO2017116738A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/066878

申请日：2016-12-15

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： JANISCH, Joachim ,  MUELLER, Manuel

IPC: H01L21/67 ,  H01L21/324

CPC classification number: H01L21/67248 ,  F27D25/00 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H05B3/0047

Abstract: Systems and methods for reducing contamination on reflective mirrors disposed on chamber walls in a millisecond anneal system are provided. In one example implementation, the reflective mirrors can be heated by one or more of (1) heating the fluid in the closed fluid system for regulating the temperature of the reflective mirrors; (2) electrical cartridge heater(s) or heater ribbon(s) attached to the reflective mirrors; and/or (3) use of lamp light inside the chamber.

Abstract translation: 提供了用于减少在毫秒退火系统中设置在室壁上的反射镜上的污染的系统和方法。 在一个示例实施方式中，可以通过以下方式中的一个或多个来加热反射镜：（1）加热封闭流体系统中的流体以调节反射镜的温度; （2）附接到反射镜的电加热器盒或加热器带; 和/或（3）在室内使用灯光。

公开(公告)号：WO2017116709A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/066563

申请日：2016-12-14

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： CIBERE, Joseph

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/67288 ,  G01R31/2831 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67248

Abstract: Systems and methods for substrate support in a millisecond anneal system are provided. In one example implementation, a millisecond anneal system includes a processing chamber having a wafer support plate. A plurality of support pins can extend from the wafer support plate. The support pins can be configured to support a substrate. At least one of the support pins can have a spherical surface profile to accommodate a varying angle of a substrate surface normal at the point of contact with the substrate. Other example aspects of the present disclosure are directed to methods for estimating, for instance, local contact stress at the point of contact with the support pin.

Abstract translation: 提供了毫秒退火系统中衬底支撑的系统和方法。 在一个示例实施方式中，毫秒退火系统包括具有晶片支撑板的处理室。 多个支撑销可以从晶片支撑板延伸。 支撑销可以被配置为支撑衬底。 至少一个支撑销可以具有球形表面轮廓以适应在与衬底接触点处法向的衬底表面的变化角度。 本公开的其他示例方面涉及用于估计例如与支撑销接触的点处的局部接触应力的方法。

公开(公告)号：WO2017116685A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/066341

申请日：2016-12-13

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： LIEBERER, Markus ,  PFAHLER, Christian ,  HAGEDORN, Markus ,  VANABBEMA, Michael ,  COSCEEV, Alexandr

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/683 ,  H01L21/66

CPC classification number: H01L22/20 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/68757

Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.

Abstract translation: 提供毫秒退火系统的预热过程。 在一个示例实施方式中，预热过程可以包括：在毫秒退火系统的处理室中的晶片支撑板上接收衬底; 使用温度传感器获得所述晶片支撑板的一个或多个温度测量结果; 以及至少部分基于晶片支撑板的温度应用预热配方来加热晶片支撑板。 在一个示例实施方式中，预热过程可以包括：在毫秒退火系统中从具有晶片支撑板的视场的温度传感器获得一个或多个温度测量结果; 以及至少部分地基于所述一个或多个温度测量，施加脉冲式预加热配方以在所述毫秒退火系统中加热所述晶片支撑板。

公开(公告)号：WO2017083037A1

公开(公告)日：2017-05-18

申请号：PCT/US2016/056220

申请日：2016-10-10

Applicant: APPLIED MATERIALS, INC.

Inventor： RANISH, Joseph M. ,  HUNTER, Aaron Muir ,  SRINIVASAN, Swaminathan T.

IPC: H01L21/02 ,  H01L21/265 ,  H01L21/027 ,  H01L21/324

CPC classification number: H01L23/562 ,  H01J37/32009 ,  H01J37/32715 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/02321 ,  H01L21/0274 ,  H01L21/265 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31051 ,  H01L21/31122 ,  H01L21/31155 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67248 ,  H01L21/67288 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68792 ,  H01L22/12 ,  H01L22/20 ,  H01L29/32

Abstract: Embodiments disclosed herein generally relate to methods and apparatus for processing of the bottom surface of a substrate to counteract thermal stresses thereon. Correcting strains are applied to the bottom surface of the substrate which compensate for undesirable strains and distortions on the top surface of the substrate. Specifically designed films may be formed on the back side of the substrate by any combination of deposition, implant, thermal treatment, and etching to create strains that compensate for unwanted distortions of the substrate. Localized strains may be introduced by locally altering the hydrogen content of a silicon nitride film or a carbon film. Structures may be formed by printing, lithography, or self-assembly techniques. Treatment of the layers of film is determined by the stress map desired and includes annealing, implanting, melting, or other thermal treatments.

Abstract translation: 这里公开的实施例大体涉及用于处理衬底的底表面以抵消其上的热应力的方法和装置。 校正应变被施加到基底的底表面上，以补偿基底顶表面上的不希望的应变和变形。 通过沉积，注入，热处理和蚀刻的任何组合可以在衬底的背面上形成特别设计的膜，以产生补偿衬底的不希望的变形的应变。 局部应变可以通过局部地改变氮化硅膜或碳膜的氢含量来引入。 结构可以通过印刷，光刻或自组装技术形成。 薄膜层的处理由所需的应力图决定，包括退火，注入，熔化或其他热处理。

公开(公告)号：WO2016138218A8

公开(公告)日：2017-03-16

申请号：PCT/US2016019484

申请日：2016-02-25

Applicant: APPLIED MATERIALS INC

Inventor： SHARMA VIJAY BHAN ,  ARNEPALLI RANGA RAO ,  GORADIA PRERNA ,  VISSER ROBERT JAN

IPC: H01L21/306

CPC classification number: H01L21/32135 ,  H01L21/02244 ,  H01L21/306 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6838

Abstract: Improved methods and apparatus for removing a metal nitride selectively with respect to exposed or underlying dielectric or metal layers are provided herein. In some embodiments, a method of etching a metal nitride layer atop a substrate, includes: (a) oxidizing a metal nitride layer to form a metal oxynitride layer (MN1-xOx) at a surface of the metal nitride layer, wherein M is one of titanium or tantalum and x is an integer from 0.05 to 0.95; and (b) exposing the metal oxynitride layer (MN1-xOx) to a process gas, wherein the metal oxynitride layer (MN1-xOx) reacts with the process gas to form a volatile compound which desorbs from the surface of the metal nitride layer.

Abstract translation: 本文提供了用于相对于暴露的或下面的电介质或金属层选择性地去除金属氮化物的改进的方法和装置。 在一些实施例中，在衬底顶部蚀刻金属氮化物层的方法包括：（a）在金属氮化物层的表面处氧化金属氮化物层以形成金属氮氧化物层（MN1-xOx），其中M是一个 的钛或钽，x是0.05至0.95的整数; 和（b）将金属氮氧化物层（MN1-xOx）暴露于处理气体中，其中金属氮氧化物层（MN1-xOx）与处理气体反应，形成从金属氮化物层的表面脱附的挥发性化合物。