POLISHING SOLUTION RETAINER
    5.
    发明申请
    POLISHING SOLUTION RETAINER 审中-公开
    抛光解决方案

    公开(公告)号:WO2006014728A1

    公开(公告)日:2006-02-09

    申请号:PCT/US2005/025733

    申请日:2005-07-19

    CPC classification number: B24B37/04 B24B57/02

    Abstract: A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation. A polishing solution retaining mechanism is attached to one of the base or the carrier head assembly. The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation. Some implementations may reduce polishing solution consumption and allow for increased angular velocity.

    Abstract translation: 对基板研磨装置和方法进行说明。 基座包括至少一个可移动的压板以接合抛光垫。 在抛光操作期间,至少一个承载头组件基本上在抛光区域内将衬底压靠在抛光垫上。 抛光溶液分配器在抛光操作期间基本上在抛光区域内将抛光溶液施加到抛光垫。 抛光溶液保持机构附接到基座或承载头组件中的一个。 保持机构接合抛光垫的顶表面,并且在抛光操作期间将抛光液基本保持在抛光区域内。 一些实施方案可以减少抛光溶液消耗并允许增加的角速度。

    METHOD AND COMPOSITION FOR POLISHING A SUBSTRATE
    6.
    发明申请
    METHOD AND COMPOSITION FOR POLISHING A SUBSTRATE 审中-公开
    用于抛光基材的方法和组合物

    公开(公告)号:WO2005075711A1

    公开(公告)日:2005-08-18

    申请号:PCT/US2004/043516

    申请日:2004-12-27

    CPC classification number: H01L21/7684 C25F3/16 C25F3/26 H01L21/32125

    Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a conductive material from a substrate surface including sulfuric acid or derivative, phosphoric acid or derivative, a first chelating agent including an organic salt, a pH adjusting agent to provide a pH between about 2 and about 10 and a solvent. The composition may further include a second chelating agent. The composition may be used in a single step or two step electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as tungsten, with a reduction in planarization type defects.

    Abstract translation: 提供了抛光组合物和从衬底表面去除导电材料的方法。 一方面,提供一种组合物,用于从包括硫酸或衍生物,磷酸或衍生物的底物表面至少去除导电材料,包括有机盐的第一螯合剂,pH调节剂,以提供约2 约10和溶剂。 组合物还可以包括第二螯合剂。 组合物可以用于单步或两步电化学机械平面化工艺。 本文所述的抛光组合物和方法提高了材料从衬底表面(例如钨)的有效去除速率,同时平坦化型缺陷的减少。

    POLISHING SOLUTION RETAINER
    9.
    发明申请
    POLISHING SOLUTION RETAINER 审中-公开
    抛光解决方案固定器

    公开(公告)号:WO2006014728B1

    公开(公告)日:2006-03-23

    申请号:PCT/US2005025733

    申请日:2005-07-19

    CPC classification number: B24B37/04 B24B57/02

    Abstract: A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation. A polishing solution retaining mechanism is attached to one of the base or the carrier head assembly. The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation. Some implementations may reduce polishing solution consumption and allow for increased angular velocity.

    Abstract translation: 描述了一种基底抛光设备和方法。 基座包括至少一个可移动的台板以接合抛光垫。 在抛光操作期间,至少一个承载头组件将衬底基本上在抛光区域内压靠在抛光垫上。 抛光溶液分配器在抛光操作期间基本在抛光区域内将抛光溶液施加到抛光垫。 抛光溶液保持机构连接到基座或承载头组件之一上。 保持机构接合抛光垫的顶表面并且在抛光操作期间将抛光溶液基本保持在抛光区域内。 一些实施可以减少抛光溶液消耗并允许增加角速度。

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