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    CONDITIONING ELEMENT FOR ELECTROCHEMICAL MECHANICAL PROCESSING
    1.
    发明申请
    CONDITIONING ELEMENT FOR ELECTROCHEMICAL MECHANICAL PROCESSING 审中-公开
    电化学机械加工的条件元素

    公开(公告)号：WO2006132725A1

    公开(公告)日：2006-12-14

    申请号：PCT/US2006/016429

    申请日：2006-04-27

    Applicant: APPLIED MATERIALS, INC. ,  TIAN, Yuan A. ,  YILMAZ, Alpay ,  ALONZO, Gerald John ,  WOHLERT, Martin S. ,  HU, Yongqi ,  TSAI, Stan D. ,  EWALD, Robert A. ,  CHANG, Shou-Sung

    Inventor： TIAN, Yuan A. ,  YILMAZ, Alpay ,  ALONZO, Gerald John ,  WOHLERT, Martin S. ,  HU, Yongqi ,  TSAI, Stan D. ,  EWALD, Robert A. ,  CHANG, Shou-Sung

    IPC: B24B53/12 ,  B24B37/04 ,  B24B53/007

    CPC classification number: B24B53/017 ,  B24B53/12

    Abstract: Embodiments of a conditioning element (208) for conditioning a processing pad are provided herein. In one embodiment, a conditioning element (208) for conditioning a processing pad includes a body having a face. A plurality of diamond particles (420) are disposed on the face and define a conditioning surface. The diamond particles (420) are of a type selected from the group consisting of very blocky (4D), blocky (3D), and irregular (2D), and have a shape ratio less than or equal to 1.2. In one embodiment, the diamond particles (420) have an average size of between about 85 and about 115 µm. In one embodiment, the size of the diamond particles (420) may have a standard of deviation that is less than about 5 µm. In one embodiment, the diamond particles may have a spacing of greater than 400 µm.

    Abstract translation: 本文提供了用于调理处理垫的调节元件（208）的实施例。 在一个实施例中，用于调节处理垫的调节元件（208）包括具有面部的主体。 多个金刚石颗粒（420）设置在面上并限定调节表面。 金刚石颗粒（420）是选自非常块状（4D），块状（3D）和不规则（2D）的类型，并且具有小于或等于1.2的形状比。 在一个实施方案中，金刚石颗粒（420）具有约85至约115μm的平均尺寸。 在一个实施例中，金刚石颗粒（420）的尺寸可以具有小于约5μm的偏差标准。 在一个实施例中，金刚石颗粒可以具有大于400μm的间隔。

    METHOD AND COMPOSITION FOR POLISHING A SUBSTRATE
    4.
    发明申请
    METHOD AND COMPOSITION FOR POLISHING A SUBSTRATE 审中-公开
    用于抛光基材的方法和组合物

    公开(公告)号：WO2005075711A1

    公开(公告)日：2005-08-18

    申请号：PCT/US2004/043516

    申请日：2004-12-27

    Applicant: APPLIED MATERIALS, INC. ,  LIU, Feng Q. ,  TSAI, Stan D. ,  WOHLERT, Martin S. ,  TIAN, Yuan A. ,  JIA, Renhe ,  HU, Yongqi ,  CHEN, Liang-Yuh

    Inventor： LIU, Feng Q. ,  TSAI, Stan D. ,  WOHLERT, Martin S. ,  TIAN, Yuan A. ,  JIA, Renhe ,  HU, Yongqi ,  CHEN, Liang-Yuh

    IPC: C25F3/26

    CPC classification number: H01L21/7684 ,  C25F3/16 ,  C25F3/26 ,  H01L21/32125

    Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a conductive material from a substrate surface including sulfuric acid or derivative, phosphoric acid or derivative, a first chelating agent including an organic salt, a pH adjusting agent to provide a pH between about 2 and about 10 and a solvent. The composition may further include a second chelating agent. The composition may be used in a single step or two step electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as tungsten, with a reduction in planarization type defects.

    Abstract translation: 提供了抛光组合物和从衬底表面去除导电材料的方法。 一方面，提供一种组合物，用于从包括硫酸或衍生物，磷酸或衍生物的底物表面至少去除导电材料，包括有机盐的第一螯合剂，pH调节剂，以提供约2 约10和溶剂。 组合物还可以包括第二螯合剂。 组合物可以用于单步或两步电化学机械平面化工艺。 本文所述的抛光组合物和方法提高了材料从衬底表面（例如钨）的有效去除速率，同时平坦化型缺陷的减少。

    METAL CMP PROCESS ON ONE OR MORE POLISHING STATIONS USING SLURRIES WITH OXIDIZERS
    6.
    发明申请
    METAL CMP PROCESS ON ONE OR MORE POLISHING STATIONS USING SLURRIES WITH OXIDIZERS 审中-公开
    金属CMP工艺在一个或多个抛光站使用流动与氧化剂

    公开(公告)号：WO2006105150A3

    公开(公告)日：2008-01-03

    申请号：PCT/US2006011387

    申请日：2006-03-29

    Applicant: APPLIED MATERIALS INC ,  WANG SHI-PING ,  WOHLERT MARTIN S ,  DUBOUST ALAIN ,  JIA RENHE ,  LIU FENG Q ,  TIAN YUAN A ,  CHEN LIANG-YUH ,  TSAI STAN D ,  HSU WEI-YUNG

    Inventor： WANG SHI-PING ,  WOHLERT MARTIN S ,  DUBOUST ALAIN ,  JIA RENHE ,  LIU FENG Q ,  TIAN YUAN A ,  CHEN LIANG-YUH ,  TSAI STAN D ,  HSU WEI-YUNG

    IPC: H01L21/302 ,  H01L21/461

    CPC classification number: H01L21/3212 ,  C09G1/02 ,  C23F3/04 ,  C23F3/06 ,  H01L21/32125 ,  H01L21/7684

    Abstract: Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. In one aspect, a full sequence electrochemical mechanical planarization technique is provided. In another aspect, a hybrid planarization technique using combination of at least one chemical mechanical polishing process and at least one electrochemical mechanical polishing process is provided. In addition, a multi-step polishing process for polishing a substrate surface using at least two oxidizers in one or more polishing composition is described. The polishing composition may be used in the full sequence or the hybrid planarization technique. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface with a reduction in planarization defects.

    Abstract translation: 提供了抛光组合物和从衬底表面去除导电材料和阻挡材料的方法。 一方面，提供了全序列电化学机械平面化技术。 在另一方面，提供了使用至少一种化学机械抛光工艺和至少一种电化学机械抛光工艺的组合的混合平面化技术。 此外，描述了在一种或多种研磨组合物中使用至少两种氧化剂来研磨衬底表面的多步抛光方法。 抛光组合物可以以全序或混合平面化技术使用。 本文所述的抛光组合物和方法改善了材料从衬底表面的有效去除速率，同时减小了平坦化缺陷。

    CONDUCTIVE PAD WITH HIGH ABRASION
    7.
    发明申请
    CONDUCTIVE PAD WITH HIGH ABRASION 审中-公开
    具有高磨损性的导电垫

    公开(公告)号：WO2006093625A1

    公开(公告)日：2006-09-08

    申请号：PCT/US2006/004114

    申请日：2006-02-06

    Applicant: APPLIED MATERIALS, INC. ,  HU, Yongqi ,  TSAI, Stan D. ,  WOHLERT, Martin S. ,  LIU, Feng Q. ,  CHEN, Liang-yuh

    Inventor： HU, Yongqi ,  TSAI, Stan D. ,  WOHLERT, Martin S. ,  LIU, Feng Q. ,  CHEN, Liang-yuh

    IPC: B23H5/08 ,  B24B37/04 ,  H01L21/687

    CPC classification number: B24B37/22 ,  B23H5/08 ,  H01L21/67155

    Abstract: A method and apparatus for a planarizing or polishing article for Electrochemical Mechanical Planarization (ECMP) is disclosed. The polishing article is a pad assembly (122) having a plurality of conductive domains and a plurality of abrasive domains on a processing surface. The abrasive domains and the conductive domains comprise a plurality of contact elements (150) that are adapted to bias a semiconductor substrate (115) while also providing abrasive qualities to enhance removal of material deposited on the substrate.

    Abstract translation: 公开了一种用于电化学机械平面化（ECMP）的平面化或抛光制品的方法和装置。 抛光制品是在处理表面上具有多个导电区域和多个研磨区域的垫组件（122）。 研磨区域和导电区域包括适于偏置半导体衬底（115）的多个接触元件（150），同时还提供磨料质量以增强沉积在衬底上的材料的去除。

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