公开(公告)号：WO2012054149A2

公开(公告)日：2012-04-26

申请号：PCT/US2011/051251

申请日：2011-09-12

Applicant: APPLIED MATERIALS, INC. ,  DHANDAPANI, Sivakumar ,  JAIN, Asheesh ,  GARRETSON, Charles C. ,  MENK, Gregory, E. ,  TSAI, Stan, D.

Inventor： DHANDAPANI, Sivakumar ,  JAIN, Asheesh ,  GARRETSON, Charles C. ,  MENK, Gregory, E. ,  TSAI, Stan, D.

IPC: H01L21/304 ,  H01L21/66

CPC classification number: B24B53/007 ,  B24B37/005

Abstract: Apparatus and methods for conditioning a polishing pad in a CMP system are provided. In one embodiment, an apparatus for polishing a substrate is provided. The apparatus includes a rotatable platen and a conditioner device coupled to a base. The conditioner device includes a shaft rotatably coupled to the base by a first motor. A rotatable conditioner head is coupled to the shaft by an arm. The conditioner head coupled to a second motor controlling rotation of the conditioner head. One or more measurement devices are provided that are operable to sense a rotational force metric of the shaft relative to the base and a rotational force metric of the conditioner head.

Abstract translation: 提供了用于调节CMP系统中抛光垫的装置和方法。 在一个实施例中，提供了一种用于抛光衬底的装置。 该装置包括可旋转的压盘和联接到基座的调节装置。 调节装置包括通过第一电动机可旋转地联接到基座的轴。 可旋转的调节头通过臂联接到轴上。 调节头联接到控制调节头旋转的第二电动机。 提供一个或多个测量装置，其可操作以感测轴相对于基座的旋转力度量和调节器头的旋转力度量。

公开(公告)号：WO2012005939A3

公开(公告)日：2012-04-05

申请号：PCT/US2011041255

申请日：2011-06-21

Applicant: APPLIED MATERIALS INC ,  MENK GREGORY E ,  TSAI STAN D ,  CHO SANG J ,  DHANDAPANI SIVAKUMAR

Inventor： MENK GREGORY E ,  TSAI STAN D ,  CHO SANG J ,  DHANDAPANI SIVAKUMAR

IPC: H01L21/304

CPC classification number: B24B37/26 ,  B24B37/005 ,  B24B37/042 ,  B24B57/02

Abstract: Embodiments of the present invention generally relate to methods for chemical mechanical polishing a substrate. The methods generally include measuring the thickness of a polishing pad having grooves or other slurry transport features on a polishing surface. Once the depth of the grooves on the polishing surface is determined, a flow rate of a polishing slurry is adjusted in response to the determined groove depth. A predetermined number of substrates are polished on the polishing surface. The method can then optionally be repeated.

Abstract translation: 本发明的实施例总体上涉及用于化学机械抛光基板的方法。 该方法通常包括测量在抛光表面上具有凹槽或其他浆料输送特征的抛光垫的厚度。 一旦确定了抛光表面上的凹槽的深度，响应于确定的凹槽深度来调节抛光浆料的流量。 预定数量的基板在抛光表面上被抛光。 然后可以可选地重复该方法。

公开(公告)号：WO2011133386A3

公开(公告)日：2012-02-02

申请号：PCT/US2011032447

申请日：2011-04-14

Applicant: APPLIED MATERIALS INC ,  DHANDAPANI SIVAKUMAR ,  QIAN JUN ,  COCCA CHRISTOPHER D ,  FUNG JASON GARCHEUNG ,  CHANG SHOU-SUNG ,  GARRETSON CHARLES C ,  MENK GREGORY E ,  TSAI STAN D

Inventor： DHANDAPANI SIVAKUMAR ,  QIAN JUN ,  COCCA CHRISTOPHER D ,  FUNG JASON GARCHEUNG ,  CHANG SHOU-SUNG ,  GARRETSON CHARLES C ,  MENK GREGORY E ,  TSAI STAN D

IPC: B24B37/00 ,  B24B49/03 ,  B24B53/007 ,  H01L21/304

CPC classification number: B24B53/017 ,  B24B37/042

Abstract: Embodiments described herein use closed-loop control (CLC) of conditioning sweep to enable uniform groove depth removal across the pad, throughout pad life. A sensor integrated into the conditioning arm enables the pad stack thickness to be monitored in-situ and in real time. Feedback from the thickness sensor is used to modify pad conditioner dwell times across the pad surface, correcting for drifts in the pad profile that may arise as the pad and disk age. Pad profile CLC enables uniform reduction in groove depth with continued conditioning, providing longer consumables lifetimes and reduced operating costs.

Abstract translation: 本文描述的实施例使用调节扫描的闭环控制（CLC），以在整个衬垫寿命期间跨越焊盘实现均匀的凹槽深度去除。 集成到调节臂中的传感器使得可以在现场和实时监测焊盘堆叠厚度。 来自厚度传感器的反馈用于修改焊盘表面上的焊盘调节器停留时间，以校正可能随焊盘和磁盘寿命而出现的焊盘轮廓中的漂移。 焊盘轮廓CLC可以通过持续的调节来均匀地减小槽深度，提供更长的消耗品寿命和降低的操作成本。

公开(公告)号：WO2010008824A3

公开(公告)日：2010-03-25

申请号：PCT/US2009048243

申请日：2009-06-23

Applicant: APPLIED MATERIALS INC ,  DHANDAPANI SIVAKUMAR ,  TSAI STAN D ,  MAO DAXIN ,  DESHPANDE SAMEER ,  CHANG SHOU-SUNG ,  MENK GREGORY E ,  GARRETSON CHARLES C ,  FUNG JASON GARCHEUNG ,  COCCA CHRISTOPHER D ,  CHEN HUNG CHIH

Inventor： DHANDAPANI SIVAKUMAR ,  TSAI STAN D ,  MAO DAXIN ,  DESHPANDE SAMEER ,  CHANG SHOU-SUNG ,  MENK GREGORY E ,  GARRETSON CHARLES C ,  FUNG JASON GARCHEUNG ,  COCCA CHRISTOPHER D ,  CHEN HUNG CHIH

IPC: H01L21/304 ,  B24B37/04

CPC classification number: B24B49/18 ,  B24B37/005 ,  B24B37/042

Abstract: A method and apparatus for conditioning a polishing pad is provided. The conditioning element is held by a conditioning arm rotatably mounted to a base at a pivot point. An actuator pivots the arm about the pivot point. The conditioning element is urged against the surface of the polishing pad, and translated with respect to the polishing pad to remove material from the polishing pad and roughen its surface. The interaction of the abrasive conditioning surface with the polishing pad surface generates a frictional force. The frictional force may be monitored by monitoring the torque applied to the pivot point, and material removal controlled thereby. The conditioning time, down force, translation rate, or rotation of the conditioning pad may be adjusted based on the measured torque.

Abstract translation: 提供了用于调节抛光垫的方法和装置。 调节元件由调节臂保持，该调节臂在枢转点处可旋转地安装到基座。 执行器使臂绕枢轴点枢转。 调节元件被推靠在抛光垫的表面上，并且相对于抛光垫平移以从抛光垫去除材料并使其表面变粗糙。 研磨调节表面与抛光垫表面的相互作用产生摩擦力。 可以通过监测施加到枢轴点的扭矩以及由此控制的材料去除来监测摩擦力。 调节时间，下压力，平移速度或调节垫的旋转可基于测量的扭矩进行调节。

公开(公告)号：WO2010008824A2

公开(公告)日：2010-01-21

申请号：PCT/US2009/048243

申请日：2009-06-23

Applicant: APPLIED MATERIALS, INC. ,  DHANDAPANI, Sivakumar ,  TSAI, Stan, D. ,  MAO, Daxin ,  DESHPANDE, Sameer ,  CHANG, Shou-Sung ,  MENK, Gregory, E. ,  GARRETSON, Charles, C. ,  FUNG, Jason, Garcheung ,  COCCA, Christopher, D. ,  CHEN, Hung, Chih

Inventor： DHANDAPANI, Sivakumar ,  TSAI, Stan, D. ,  MAO, Daxin ,  DESHPANDE, Sameer ,  CHANG, Shou-Sung ,  MENK, Gregory, E. ,  GARRETSON, Charles, C. ,  FUNG, Jason, Garcheung ,  COCCA, Christopher, D. ,  CHEN, Hung, Chih

IPC: H01L21/304

CPC classification number: B24B49/18 ,  B24B37/005 ,  B24B37/042

Abstract: A method and apparatus for conditioning a polishing pad is provided. The conditioning element is held by a conditioning arm rotatably mounted to a base at a pivot point. An actuator pivots the arm about the pivot point. The conditioning element is urged against the surface of the polishing pad, and translated with respect to the polishing pad to remove material from the polishing pad and roughen its surface. The interaction of the abrasive conditioning surface with the polishing pad surface generates a frictional force. The frictional force may be monitored by monitoring the torque applied to the pivot point, and material removal controlled thereby. The conditioning time, down force, translation rate, or rotation of the conditioning pad may be adjusted based on the measured torque.

Abstract translation: 提供了一种用于调节抛光垫的方法和设备。 调节元件由调节臂保持，该调节臂在枢转点处可旋转地安装到基座。 执行器使臂绕枢轴点枢转。 调节元件被推靠在抛光垫的表面上，并且相对于抛光垫平移以从抛光垫去除材料并使其表面变粗糙。 研磨调节表面与抛光垫表面的相互作用产生摩擦力。 可以通过监测施加到枢轴点的扭矩以及由此控制的材料去除来监测摩擦力。 调节垫的调节时间，下压力，平移速度或旋转可基于测量的转矩进行调节。

公开(公告)号：WO2006121600B1

公开(公告)日：2007-02-08

申请号：PCT/US2006015386

申请日：2006-04-25

Applicant: APPLIED MATERIALS INC ,  WANG ZHIHONG ,  WANG YOU ,  MAO DAXIN ,  JIA RENHE ,  TSAI STAN D ,  HU YONGQI ,  TIAN YUAN A ,  CHEN LIANG-YUH

Inventor： WANG ZHIHONG ,  WANG YOU ,  MAO DAXIN ,  JIA RENHE ,  TSAI STAN D ,  HU YONGQI ,  TIAN YUAN A ,  CHEN LIANG-YUH

IPC: C25F3/02 ,  B23H3/08 ,  B23H5/08 ,  C09G1/02 ,  H01L21/321 ,  H01L21/768

CPC classification number: C25F3/02 ,  B23H5/08 ,  C09G1/02 ,  H01L21/32125 ,  H01L21/7684

Abstract: Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

Abstract translation: 提供了用于处理其上设置有导电材料层的基板的组合物和方法。 在一个实施方案中，提供了一种用于处理其上设置有导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，溶剂和 pH为约3至约10.该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除 导电材料层。

公开(公告)号：WO2006105150A2

公开(公告)日：2006-10-05

申请号：PCT/US2006/011387

申请日：2006-03-29

Applicant: APPLIED MATERIALS, INC. ,  WANG, Shi-Ping ,  WOHLERT, Martin S. ,  DUBOUST, Alain ,  JIA, Renhe ,  LIU, Feng Q. ,  TIAN, Yuan A. ,  CHEN, Liang-Yuh ,  TSAI, Stan D. ,  HSU, Wei-Yung

Inventor： WANG, Shi-Ping ,  WOHLERT, Martin S. ,  DUBOUST, Alain ,  JIA, Renhe ,  LIU, Feng Q. ,  TIAN, Yuan A. ,  CHEN, Liang-Yuh ,  TSAI, Stan D. ,  HSU, Wei-Yung

IPC: C03C15/00 ,  H01L21/302 ,  B44C1/22 ,  H01L21/461

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C23F3/04 ,  C23F3/06 ,  H01L21/32125 ,  H01L21/7684

Abstract: Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. In one aspect, a full sequence electrochemical mechanical planarization technique is provided. In another aspect, a hybrid planarization technique using combination of at least one chemical mechanical polishing process and at least one electrochemical mechanical polishing process is provided. In addition, a multi-step polishing process for polishing a substrate surface using at least two oxidizers in one or more polishing composition is described. The polishing composition may be used in the full sequence or the hybrid planarization technique. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface with a reduction in planarization defects.

Abstract translation: 提供了抛光组合物和从衬底表面去除导电材料和阻挡材料的方法。 一方面，提供了全序列电化学机械平面化技术。 在另一方面，提供了使用至少一种化学机械抛光工艺和至少一种电化学机械抛光工艺的组合的混合平面化技术。 此外，描述了在一种或多种研磨组合物中使用至少两种氧化剂来研磨衬底表面的多步抛光方法。 抛光组合物可以以全序或混合平面化技术使用。 本文所述的抛光组合物和方法改善了材料从衬底表面的有效去除速率，同时减小了平坦化缺陷。

公开(公告)号：WO2006081446A1

公开(公告)日：2006-08-03

申请号：PCT/US2006/002980

申请日：2006-01-27

Applicant: APPLIED MATERIALS, INC. ,  MAO, Daxin ,  JIA, Renhe ,  TSAI, Stan D. ,  ZHAO, Junzi ,  KARUPPIAH, Laksh ,  CHEN, Liang-Yuh

Inventor： MAO, Daxin ,  JIA, Renhe ,  TSAI, Stan D. ,  ZHAO, Junzi ,  KARUPPIAH, Laksh ,  CHEN, Liang-Yuh

IPC: H01L21/321 ,  C25F3/16 ,  C09G1/04

CPC classification number: C09G1/04 ,  C25F3/08 ,  H01L21/32125

Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a conductive material from a substrate surface including one or more inorganic acids, a pH adjusting agent, a chelating agent, a passivating polymeric material, a pH between about 5 and about 10, and a solvent. The composition may be used in a single step or two step electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as tungsten, with a reduction in planarization type defects.

Abstract translation: 提供了抛光组合物和从衬底表面去除导电材料的方法。 在一个方面，提供了一种组合物，用于从基材表面除去至少一种导电材料，所述基材表面包括一种或多种无机酸，pH调节剂，螯合剂，钝化聚合物材料，约5至约10的pH，以及 溶剂。 组合物可以用于单步或两步电化学机械平面化工艺。 本文所述的抛光组合物和方法提高了材料从衬底表面（例如钨）的有效去除速率，同时平坦化型缺陷的减少。

公开(公告)号：WO2006014728B1

公开(公告)日：2006-03-23

申请号：PCT/US2005025733

申请日：2005-07-19

Applicant: APPLIED MATERIALS INC ,  ZHANG HANZHONG ,  LIU FENG Q ,  TSAI STAN D ,  MAVLIEV RASHID ,  OLGADO DONALD ,  CHEN LIANG-YUH

Inventor： ZHANG HANZHONG ,  LIU FENG Q ,  TSAI STAN D ,  MAVLIEV RASHID ,  OLGADO DONALD ,  CHEN LIANG-YUH

IPC: B24B37/04 ,  B24B57/02

CPC classification number: B24B37/04 ,  B24B57/02

Abstract: A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation. A polishing solution retaining mechanism is attached to one of the base or the carrier head assembly. The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation. Some implementations may reduce polishing solution consumption and allow for increased angular velocity.

Abstract translation: 描述了一种基底抛光设备和方法。 基座包括至少一个可移动的台板以接合抛光垫。 在抛光操作期间，至少一个承载头组件将衬底基本上在抛光区域内压靠在抛光垫上。 抛光溶液分配器在抛光操作期间基本在抛光区域内将抛光溶液施加到抛光垫。 抛光溶液保持机构连接到基座或承载头组件之一上。 保持机构接合抛光垫的顶表面并且在抛光操作期间将抛光溶液基本保持在抛光区域内。 一些实施可以减少抛光溶液消耗并允许增加角速度。

公开(公告)号：WO2005061177A1

公开(公告)日：2005-07-07

申请号：PCT/US2004/037870

申请日：2004-11-12

Applicant: APPLIED MATERIALS, INC. ,  HU, Yongqi ,  TSAI, Stan D. ,  WANG, Yan ,  LIU, Feng Q. ,  CHANG, Shou-Sung ,  CHEN, Liang-Yuh

Inventor： HU, Yongqi ,  TSAI, Stan D. ,  WANG, Yan ,  LIU, Feng Q. ,  CHANG, Shou-Sung ,  CHEN, Liang-Yuh

IPC: B24B37/04

CPC classification number: B24B37/26 ,  B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  B24B37/042 ,  B24B37/046 ,  B24B37/22 ,  B24B37/24 ,  B24B49/16 ,  B24B53/017 ,  C25D17/14 ,  H01L21/32125

Abstract: Embodiments of a processing pad assembly for processing a substrate are provided. The processing pad assembly includes an upper layer having a processing surface and an electrode having a top side coupled to the upper layer and a bottom side opposite the top side. A first set of holes is formed through the upper layer for exposing the electrode to the processing surface. At least one aperture is formed through the upper layer and the electrode.

Abstract translation: 提供了用于处理衬底的处理衬垫组件的实施例。 处理垫组件包括具有处理表面的上层和具有联接到上层的顶侧和与顶侧相对的底侧的电极。 通过上层形成第一组孔，用于将电极暴露于处理表面。 通过上层和电极形成至少一个孔。