Abstract:
Structures and methods for three-dimensional image (20) sensing using high frequency modulation includes CMOS-implementable sensor structures (200) using differential charge transfer, including such sensors (230) enabling rapid horizontal and slower vertical dimension local charge collection. Wavelength response of such sensors can be altered dynamically by varying gate potentials. Methods for producing such sensor structures on conventional CMOS fabrication facilities include use of "rich" instructions to command the fabrication process to optimize image sensor rather than digital or analog ICs. One detector structure has closely spaced-apart, elongated finger-like structures that rapidly collect charge in the spaced-apart direction and then move collected charge less rapidly in the elongated direction. Detector response is substantially independent of the collection rate in the elongated direction.
Abstract:
An imaging array having a CCD imaging array[10] that includes a plurality of pixels[15] that accumulate charge when exposed to light and a readout amplifier[30] is disclosed. The readout amplifier includes an operational amplifier[32] having an input and an output port and a feedback capacitor[33] connecting the input and output ports and a variable impedance path[35] between the input and output ports, the path having an impedance controlled by a reset signal. A reset signal generator[ 173] generates the reset signal in three sequential phases in which the path between the input and output ports has three impedance values to provide a starting voltage at the amplifier input prior to the measurement of charge from each pixel that has reduced noise.
Abstract:
Effective differential dynamic range in a differential pixel detector (70) is increased by avoiding saturation effects due to common mode contribution in optical energy to be detected. Photocurrent generated by each photodetector (Da) pair is directly integrated by an associated capacitor (Ca) over an integration time T. Within time T, before either integrated capacitor voltage reaches Vsat for the photodetector, at least one of the capacitors is reset to a voltage such that the desired differential detector signal is still determinable. Reset may be generated externally or internally to the differential pixel detector.
Abstract:
A hybrid imaging array and method for using the same is disclosed. The image array includes a low-light imaging array and a color imaging array. The two imaging arrays can be utilized separately or in conjunction with one another. The low-light imaging array is optimized for night vision or situations in which the light levels are too low to allow a conventional color image to be formed by the color imaging array. The color imaging array is optimized for daylight or color photography. The low-light imaging array can be utilized in conjunction with the color imaging array to provide a color image with reduced noise.
Abstract:
An imaging array having a CCD imaging array[10] that includes a plurality of pixels[15] that accumulate charge when exposed to light and a readout amplifier[30] is disclosed. The readout amplifier includes an operational amplifier[32] having an input and an output port and a feedback capacitor[33] connecting the input and output ports and a variable impedance path[35] between the input and output ports, the path having an impedance controlled by a reset signal. A reset signal generator[ 173] generates the reset signal in three sequential phases in which the path between the input and output ports has three impedance values to provide a starting voltage at the amplifier input prior to the measurement of charge from each pixel that has reduced noise.
Abstract:
A hybrid imaging array and method for using the same is disclosed. The image array includes a low-light imaging array and a color imaging array. The two imaging arrays can be utilized separately or in conjunction with one another. The low-light imaging array is optimized for night vision or situations in which the light levels are too low to allow a conventional color image to be formed by the color imaging array. The color imaging array is optimized for daylight or color photography. The low-light imaging array can be utilized in conjunction with the color imaging array to provide a color image with reduced noise.
Abstract:
Structures and methods for three-dimensional image sensing using high frequency modulation includes CMOS-implementable sensor structures using differential charge transfer, including such sensors enabling rapid horizontal and slower vertical dimension local charge collection. Wavelength response of such sensors can be altered dynamically by varying gate potentials. Methods for producing such sensor structures on conventional CMOS fabrication facilities include use of "rich" instructions to command the fabrication process to optimize image sensor rather than digital or analog ICs. One detector structure has closely spaced-apart, elongated finger-like structures that rapidly collect charge in the spaced-apart direction and then move collected charge less rapidly in the elongated direction. Detector response is substantially independent of the collection rate in the elongated direction.
Abstract:
Effective differential dynamic range in a differential pixel detector is increased by avoiding saturation effects due to common mode contribution in optical energy to be detected. Photocurrent generated by each photodetector pair is directly integrated by an associated capacitor over an integration time T. Within time T, before either integrated capacitor voltage reaches Vsat for the photodetector, at least one of the capacitors is reset to a voltage such that the desired differential detector signal is still determinable. Reset may be generated externally or internally to the differential pixel detector.